Surface structure and composition of nanocrystalline SnO2 thin films obtained by Chemical Vapor Deposition

2004 ◽  
Vol 822 ◽  
Author(s):  
Davide Barreca ◽  
Elza Bontempi ◽  
Laura E. Depero ◽  
Cinzia Maragno ◽  
Eugenio Tondello
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Structural Features ◽  
Growth Surface ◽  
Precursor Film ◽  
X Ray ◽  
Synthesis Conditions

AbstractNanocrystalline SnO2 thin films were synthesized by Chemical Vapor Deposition on Si(100) and Al2O3 substrates using bis(diethylamino)dimethylstannane(IV) [(CH3)2Sn(N(C2H5)2)2] as precursor. Film growth was performed at 400-500°C in an O2(H2O)+N2 atmosphere, with the aim of studying the effects of the synthesis conditions on the coating properties. The sample chemical composition and surface morphology were analyzed by X-ray Photoelectron Spectroscopy (XPS) and Atomic Force Microscopy (AFM), while their structural features were investigated by Glancing Incidence X-ray Diffraction (GIXRD) and X-ray Reflectivity (XRR). In this paper, the attention is focused on the interplay between film nanostructure and morphology, with particular regard to the influence of the growth surface.

Initial growth stages of CeO2 nanosystems by Plasma-Enhanced Chemical Vapor Deposition

2002 ◽  
Vol 756 ◽  
Author(s):  
Davide Barreca ◽  
Alberto Gasparotto ◽  
Eugenio Tondello ◽  
Stefano Polizzi ◽  
Alvise Benedetti ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Chemical Vapor ◽  
Precursor Film ◽  
Growth Stages ◽  
Initial Growth ◽  
X Ray ◽  
Synthesis Conditions

ABSTRACTNanocrystalline CeO2 thin films were synthesized by Plasma-Enhanced Chemical Vapor Deposition using Ce(dpm)4 as precursor. Film growth was accomplished at 150–300°C either in Ar or in Ar-O2 plasmas on SiO2 and Si(100) with the aim of studying the effects of substrate temperature and O2 content on coating characteristics. Film microstructure as a function of the synthesis conditions was investigated by Glancing Incidence X-Ray Diffraction (GIXRD) and Transmission Electron Microscopy (TEM), while surface morphology was analyzed by Atomic Force Microscopy (AFM). Surface and in-depth chemical composition was studied by X-ray Photoelectron Spectroscopy (XPS) and Secondary Ion Mass Spectrometry (SIMS).

Growth of Highly Oriented Zinc Oxide Thin Films by Plasma Enhanced Chemical Vapor Deposition

2006 ◽  
Vol 321-323 ◽  
pp. 1687-1690 ◽  
Author(s):  
Hee Joon Kim ◽  
Dong Young Jang ◽  
Prem Kumar Shishodia ◽  
Akira Yoshida
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Visible Region ◽  
Chemical Vapor ◽  
Zno Films ◽  
X Ray ◽  
Crystalline Films

In the paper, zinc oxide (ZnO) thin films are deposited by plasma enhanced chemical vapor deposition (PECVD) at different substrate temperatures. The ZnO films are characterized by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The analysis results indicate that highly crystalline films with high orientation can be obtained at a substrate temperature of 300 oC with 50 ml/min flow rate from Diethylzinc (DEZ). Furthermore, the investigation of optical property shows that ZnO films are transparent, and the peak transmittance in the visible region is as high as 85%.

Plasma-Enhanced Metalorganic Chemical Vapor deposition of Lipon Thin Films

2011 ◽  
Vol 1313 ◽  
Author(s):  
Lamartine Meda
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Ionic Conductivity ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Metalorganic Chemical Vapor Deposition ◽  
Electrochemical Impedance ◽  
Chemical Vapor ◽  
X Ray ◽  
Metalorganic Chemical

ABSTRACTLithium phosphorus oxynitride (Lipon) thin films have been deposited by a plasmaenhanced metalorganic chemical vapor deposition (PE-MOCVD) method using triethyl phosphate [(CH2CH3)3PO4] and lithium tert-butoxide [(LiOC(CH3)3] precursors. Growth rates were between 100 and 415 Å/min, and thicknesses ranged from 1 to 2.5 μm. X-ray powder diffraction showed that the films were amorphous, and X-ray photoelectron spectroscopy revealed approximately 6.9 at.% carbon in the films. The ionic conductivity of Lipon was measured using electrochemical impedance spectroscopy (EIS) and approximately 1.02 μS/cm was obtained, which is consistent with the ionic conductivity of Lipon deposited by radio frequency magnetron sputtering of Li3PO4 targets. An all-solid-state thin-film lithium microbattery such as Li/Lipon/LiCoO2/Au/substrate was successfully fabricated with Lipon deposited by PE-MOCVD. The battery has a capacity of ca. 22 μAh/cm2μm.

Synthesizing Nanocrystalline Carbon Thin Films by Hot Filament Chemical Vapor Deposition and Controlling Their Microstructure

2002 ◽  
Vol 17 (7) ◽  
pp. 1820-1833 ◽  
Author(s):  
S. Gupta ◽  
B. R. Weiner ◽  
G. Morell
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Noble Gas ◽  
Ion Beam ◽  
Chemical Vapor ◽  
X Ray ◽  
Hot Filament ◽  
Methane Concentrations

Nanocrystalline carbon (n-C) thin films were deposited on Mo substrates using methane (CH4) and hydrogen (H2) by the hot-filament chemical vapor deposition (HFCVD) technique. Process parameters relevant to the secondary nucleation rate were systematically varied (0.3–2.0% methane concentrations, 700–900 °C deposition temperatures, and continuous forward and reverse bias during growth) to study the corresponding variations in film microstructure. Standard nondestructive complementary characterization tools such as scanning electron microscopy, x-ray diffraction, atomic force microscopy, Raman spectroscopy, and x-ray photoelectron spectroscopy were utilized to obtain a coherent and comprehensive picture of the microstructure of these films. Through these studies we obtained an integral picture of the material grown and learned how to control key material properties such as surface morphology (faceted versus evenly smooth), grain size (microcrystalline versus nanocrystalline), surface roughness (from rough 150 rms to smooth 70 rms), and bonding configuration (sp3 C versus sp2 C), which result in physical properties relevant for several technological applications. These findings also indicate that there exist fundamental differences between HFCVD and microwave CVD (MWCVD) for methane concentrations above 1%, whereas some similarities are drawn among films grown by ion-beam assisted deposition, HFCVD assisted by low-energy particle bombardment, and MWCVD using noble gas in replacement of traditionally used hydrogen.

An Environmentally Clean Liquid Precursor of Sulfur for Metalorganic Chemical Vapor Deposition (MOCVD) of Transition Metal Di-Sulfide Thin Films.

1994 ◽  
Vol 344 ◽  
Author(s):  
Prasad N. Gadgil
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Iron Pentacarbonyl ◽  
Sulfur Source ◽  
X Ray ◽  
Metalorganic Chemical

AbstractA three member ring compound propylene sulfide, C3H6S is employed as a sulfur source for the Metalorganic Chemical Vapor Deposition (MOCVD) of stoichiometric thin films of iron pyrite (FeS2). Iron pentacarbonyl Fe(CO)5, a liquid, was precursor for iron. Propylene sulfide, (PS) a liquid ( b. p. = 72–75 °C, v. p. ∼ 87 torr @ 20°C ) decomposes cleanly and quantitatively as S2 and C3H6 (propylene) above 250°C. Deposition of thin films of pyrite and their analysis by X-ray diffraction and Mossbauer and X-ray Photoelectron spectroscopy is described. Liquid state, long term stability, clean and low temperature generation of active S2 species in vapor phase and gaseous by product C3H6 which can be burned to CO2 and H2O are the key advantages offered by propylene sulfide as a sulfur source.

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