Initial growth stages of CeO2 nanosystems by Plasma-Enhanced Chemical Vapor Deposition

2002 ◽  
Vol 756 ◽  
Author(s):  
Davide Barreca ◽  
Alberto Gasparotto ◽  
Eugenio Tondello ◽  
Stefano Polizzi ◽  
Alvise Benedetti ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Chemical Vapor ◽  
Precursor Film ◽  
Growth Stages ◽  
Initial Growth ◽  
X Ray ◽  
Synthesis Conditions

ABSTRACTNanocrystalline CeO2 thin films were synthesized by Plasma-Enhanced Chemical Vapor Deposition using Ce(dpm)4 as precursor. Film growth was accomplished at 150–300°C either in Ar or in Ar-O2 plasmas on SiO2 and Si(100) with the aim of studying the effects of substrate temperature and O2 content on coating characteristics. Film microstructure as a function of the synthesis conditions was investigated by Glancing Incidence X-Ray Diffraction (GIXRD) and Transmission Electron Microscopy (TEM), while surface morphology was analyzed by Atomic Force Microscopy (AFM). Surface and in-depth chemical composition was studied by X-ray Photoelectron Spectroscopy (XPS) and Secondary Ion Mass Spectrometry (SIMS).

Surface structure and composition of nanocrystalline SnO2 thin films obtained by Chemical Vapor Deposition

2004 ◽  
Vol 822 ◽  
Author(s):  
Davide Barreca ◽  
Elza Bontempi ◽  
Laura E. Depero ◽  
Cinzia Maragno ◽  
Eugenio Tondello
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Structural Features ◽  
Growth Surface ◽  
Precursor Film ◽  
X Ray ◽  
Synthesis Conditions

AbstractNanocrystalline SnO2 thin films were synthesized by Chemical Vapor Deposition on Si(100) and Al2O3 substrates using bis(diethylamino)dimethylstannane(IV) [(CH3)2Sn(N(C2H5)2)2] as precursor. Film growth was performed at 400-500°C in an O2(H2O)+N2 atmosphere, with the aim of studying the effects of the synthesis conditions on the coating properties. The sample chemical composition and surface morphology were analyzed by X-ray Photoelectron Spectroscopy (XPS) and Atomic Force Microscopy (AFM), while their structural features were investigated by Glancing Incidence X-ray Diffraction (GIXRD) and X-ray Reflectivity (XRR). In this paper, the attention is focused on the interplay between film nanostructure and morphology, with particular regard to the influence of the growth surface.

Parallel Bias-Enhanced Sulfur-Assisted Chemical Vapor Deposition of Nanocrystalline Diamond Films

2003 ◽  
Vol 775 ◽  
Author(s):  
Joel De Jesùs ◽  
Juan A. Gonzàlez ◽  
Oscar O. Ortiz ◽  
Brad R. Weiner ◽  
Gerardo Morell
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Defect Density ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Nanocrystalline Diamond ◽  
X Ray ◽  
Positively Charged

AbstractThe transformations induced by the application of a continuous bias voltage parallel to the growing surface during the sulfur-assisted hot-filament chemical vapor deposition (HFCVD) of nanocrystalline diamond (n-D) films were investigated by Raman spectroscopy (RS), scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). The films were deposited on molybdenum substrates using CH4, H2 and H2S. Bias voltages in the range of 0 – 800 VDC were applied parallel to the substrate surface continuously during deposition. The study revealed a significant improvement in the films' density and a lowering in the defect density of the nanocrystalline diamond structure for parallel bias (PB) voltages above 400V. These high PB conditions cause the preferential removal of electrons from the gaseous environment, thus leading to the net accumulation of positive species in the volume above the growing film, which enhances the secondary nucleation. The nanoscale carbon nuclei self-assemble into carbon nano-clusters with diameters in the range of tens of nanometers, which contain diamond (sp3-bonded C) in their cores and graphitic (sp2-bonded C) enclosures. Hence, the observed improvement in film density and in atomic arrangement appears to be connected to the enhanced presence of positively charged ionic species, consistent with models which propose that positively charged carbon species are the crucial precursors for CVD diamond film growth.

X-ray photoelectron spectroscopy study on the chemistry involved in tin oxide film growth during chemical vapor deposition processes

2013 ◽  
Vol 31 (1) ◽  
pp. 01A105 ◽  
Author(s):  
Gilbère J. A. Mannie ◽  
Gijsbert Gerritsen ◽  
Hendrikus C. L. Abbenhuis ◽  
Joop van Deelen ◽  
J. W. (Hans) Niemantsverdriet ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Oxide Film ◽  
Tin Oxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Chemical Vapor ◽  
Spectroscopy Study ◽  
X Ray ◽  
Deposition Processes

Nucleation Barriers in Chemical Vapor Deposition of Triisobutylaluminum on Silicon

1988 ◽  
Vol 131 ◽  
Author(s):  
D. A. Mantell
Keyword(s):  
Chemical Vapor Deposition ◽  
Thin Layer ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Film Growth ◽  
Chemical Vapor ◽  
X Ray ◽  
Adsorption Sites ◽  
Aluminum Deposition

ABSTRACTThe nucleation of chemical vapor deposition (CVD) using triisobutylaluminum (TIBA) on Si (100) surfaces is observed in situ with x-ray photoelectron spectroscopy (XPS). Oxygen from oxide on the silicon inhibits the rate of nucleation by reacting with adsorbed TIBA and forming a thin layer of oxidized organometallic. This layer blocks active adsorption sites and prevents further deposition. On a surface without oxide, the TIBA molecules decompose liberating aluminum that can migrate and nucleate into islands opening sites for further adsorption and film growth. By removing the oxide (native or thermal) in selected areas of the surface, the barrier to nucleation is removed and aluminum deposition can occur in a predetermined pattern.

High Quality GaAs Mis Diodes With Very Low Surface State Density

1990 ◽  
Vol 209 ◽  
Author(s):  
Yoshihisa Fujisaki ◽  
Sumiko Sakai ◽  
Saburo Ataka ◽  
Kenji Shibata
Keyword(s):  
Chemical Vapor Deposition ◽  
Density Of States ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
State Density ◽  
High Quality ◽  
Metal Insulator ◽  
X Ray ◽  
Mis Devices

ABSTRACTHigh quality GaAs/SiO2 MIS( Metal Insulator Semiconductor ) diodes were fabricated using (NH4)2S treatment and photo-assisted CVD( Chemical Vapor Deposition ). The density of states at the GaAs and SiO2 interface is the order of 1011 cm-2eV-1 throughout the forbidden energy range, which is smaller by the order of two than that of the MIS devices made by the conventional CVD process. The mechanism attributable to the interface improvement was investigated through XPS( X-ray Photoelectron Spectroscopy ) analyses.

Influence of initial growth stages on AlN epilayers grown by metal organic chemical vapor deposition

2015 ◽  
Vol 414 ◽  
pp. 69-75 ◽  
Author(s):  
M. Balaji ◽  
R. Ramesh ◽  
P. Arivazhagan ◽  
M. Jayasakthi ◽  
R. Loganathan ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Growth Stages ◽  
Initial Growth ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Low Temperature Nitridatio of SiO2 Films using a Catalytic-CVD System

2000 ◽  
Vol 611 ◽  
Author(s):  
Akira Izumi ◽  
Hidekazu Sato ◽  
Hideki Matsumura
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Silicon Dioxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Chemical Vapor ◽  
Catalytic Decomposition ◽  
Catalytic Chemical Vapor Deposition ◽  
Sio2 Films ◽  
X Ray

ABSTRACTThis paper reports a procedure for low-temperature nitridation of silicon dioxide (SiO2) surfaces using species produced by catalytic decomposition of NH3 on heated tungsten in catalytic chemical vapor deposition (Cat-CVD) system. The surface of SiO2/Si(100) was nitrided at temperatures as low as 200°C. X-ray photoelectron spectroscopy measurements revealed that incorporated N atoms are bound to Si atoms and O atoms and located top-surface of SiO2.

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