Non Destructive Electrical Defect Characterisation and Topography of Silicon Wafers and Epitaxial Layers

2005 ◽  
Vol 864 ◽  
Author(s):  
K. Dornich ◽  
T. Hahn ◽  
J.R. Niklas
Keyword(s):  
Diffusion Length ◽  
High Sensitivity ◽  
Silicon Wafers ◽  
Charge Carriers ◽  
Epitaxial Layers ◽  
Thermal Excitation ◽  
Non Destructive ◽  
And Diffusion ◽  
Defect Characterisation

AbstractRecent progress in experimental technique made it possible to improve the sensitivity of microwave detected photoconductivity by several orders of magnitude. This opens completely new possibilities for a contact less non-destructive electrical defect characterization of silicon wafers and even of epitaxial layers on substrates with extremely low resistivity. Electrical properties such as lifetime, mobility and diffusion length can be measured without contacts also at very low injection levels with a resolution only limited by the diffusion length of the charge carriers. The doping level of the material plays no major role.Owing to the high sensitivity, thermal excitation of charge carriers out of defect levels filled during the photo pulse can also be observed. This leads to defect specific photoconductivity transients which deliver pieces of information like DLTS, however, again without contacts, non critical doping, and with high spatial resolution.

Wet-Chemical Conditioning of H-Terminated Silicon Solar Cell Substrates Investigated by Surface Photovoltage Measurements

2012 ◽  
Vol 195 ◽  
pp. 301-304 ◽  
Author(s):  
Heike Angermann ◽  
U. Stürzebecher ◽  
J. Kegel ◽  
C. Gottschalk ◽  
K. Wolke ◽  
...  
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
Energy Conversion Efficiency ◽  
Charge Carriers ◽  
Surface Charges ◽  
Surfaces And Interfaces ◽  
Wet Chemical ◽  
Substrate Surfaces ◽  
Non Destructive

For further enhancement of solar energy conversion efficiency the passivation of silicon (Si) substrate surfaces and interfaces of Si-based solar cell devices is a decisive precondition to reduce recombination losses of photogenerated charge carriers. These losses are mainly controlled by surface charges, the density and the character of rechargeable interface states (Dit) [], which are induced by defects localised in a small interlayer extending over only few Å. Therefore, the application of fast non-destructive methods for characterization of the electronic interface properties directly during the technological process has received an increasing interest in recent years.

Handheld Portable Energy-Dispersive X-Ray Fluorescence Spectrometry (pXRF)

2016 ◽  
pp. 362-381 ◽  
Author(s):  
Elisabeth Holmqvist
Keyword(s):  
Production Systems ◽  
Matrix Effects ◽  
Chemical Characterization ◽  
High Sensitivity ◽  
Limited Range ◽  
Energy Dispersive ◽  
Analytical Sensitivity ◽  
X Ray ◽  
Non Destructive

Handheld portable energy-dispersive X-ray fluorescence (pXRF) spectrometry is used for non-destructive chemical characterization of archaeological ceramics. Portable XRF can provide adequate analytical sensitivity to discriminate geochemically distinct ceramic pastes, and to identify compositional clusters that correlate with data patterns acquired by NAA or other high sensitivity techniques. However, successful non-destructive analysis of unprepared inhomogeneous ceramic samples requires matrix-defined scientific protocols to control matrix effects which reduce the sensitivity and precision of the instrumentation. Quantification of the measured fluorescence intensities into absolute concentration values and detection of light elements is encumbered by the lack of matrix matched calibration and proper vacuum facilities. Nevertheless, semi-quantitative values for a limited range of high Z elements can be generated. Unstandardized results are difficult to validate by others, and decreased analytical resolution of non-destructive surface analysis may disadvantage site-specific sourcing, jeopardize correct group assignments, and lead to under-interpretation of ceramic craft and production systems.

Grain boundary light beam induced current: A characterization of bonded silicon wafers and polycrystalline silicon thin films for diffusion length extraction

2016 ◽  
Vol 213 (7) ◽  
pp. 1728-1737 ◽  
Author(s):  
Orman Gref ◽  
Ana-Maria Teodoreanu ◽  
Rainer Leihkauf ◽  
Heiko Lohrke ◽  
Martin Kittler ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Boundary ◽  
Light Beam ◽  
Polycrystalline Silicon ◽  
Diffusion Length ◽  
Silicon Wafers ◽  
Induced Current ◽  
Silicon Thin Films

Uv Raman Microscopy: Spectral and Spatial Selectivity and Even High Sensitivity

1997 ◽  
Vol 3 (S2) ◽  
pp. 835-836
Author(s):  
Calum Munro ◽  
Vasil Pajcini ◽  
Sanford A. Asher
Keyword(s):  
High Sensitivity ◽  
Interplanetary Dust ◽  
Dust Particles ◽  
Interplanetary Dust Particles ◽  
Intracavity Frequency ◽  
Carbon Species ◽  
Diamond Crystals ◽  
Uv Raman ◽  
Non Destructive

We have constructed a new UV Raman microspectrometer designed around an Olympus microscope, a single spectrograph and an intensified CCD detector (Fig. 1). We utilize CW excitation from either an intracavity frequency doubled Ar+ laser (257, 244, 229 nm) or a Kr+ laser (206 nm). We optimized the throughput by utilizing specially prepared dielectric coated Rayleigh rejection filters.In one application we used this instrument to speciate and determine the spatial distribution of non diamond carbon species in CVD diamond samples (Fig. 2). We find that these non diamond carbon species are localized in the interstitial areas between diamond crystals.In another application we demonstrated the utility of UV Raman microspectroscopy for the rapid, incisive and non-destructive characterization of meteorites and interplanetary dust particles (IDP). In addition to probing the structure and distribution of predominant mineral matrices of these materials, UV excitation enables us to the characterize the small but significant carbonaceous components included within these samples.

Characterization of the DFZ in Silicon Wafers by a Non-Destructive Technique

1986 ◽  
Vol 69 ◽  
Author(s):  
J. M. Borrego ◽  
R. J. Gutmann ◽  
N. Jensen ◽  
C. S. Lo ◽  
O. Paz
Keyword(s):  
Experimental Observation ◽  
Light Pulse ◽  
Computer Model ◽  
Surface Passivation ◽  
Silicon Wafers ◽  
Free Zone ◽  
Microwave Reflection ◽  
The Creation ◽  
Non Destructive

AbstractThis paper presents a non-destructive technique for characterizing The Defect Free Zone (DFZ) of silicon wafers. The method consists in measuring the decay of microwave reflection following the creation of excess carriers by a light pulse. For wafers with similar surface passivation we have found a direct correlation between the transient duration and the size of the DFZ. A computer model of the microwave reflection in silicon wafers with different size of DFZ agrees with experimental observation.

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