Microstructure and He Bubble Effects on Al-Cu Thin Films

2003 ◽  
Vol 792 ◽  
Author(s):  
C.S. Camacho ◽  
P.F.P. Fichtner ◽  
F.C. Zawislak ◽  
G. Feldmann
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Microelectronic Device ◽  
Elastic Recoil ◽  
Elastic Recoil Detection ◽  
Detection Analysis ◽  
Grain Structures ◽  
Transmission Electron ◽  
Device Reliability ◽  
Improve Device ◽  
Post Implantation

ABSTRACTThe effects of film morphology (mosaic- or bamboo-like grain structures) and of He bubbles on the redistribution of Cu, as well as on the formation of Al-Cu precipitates in 200 nm thick Al/SiO2 films similar to microelectronic device interconnects, are investigated using Rutherford backscattering spectrometry, elastic recoil detection analysis and transmission electron microscopy. As-deposited and pre-annealed Al films were implanted with Cu and/or He ions forming concentration profiles located 100 nm below the surface and with peak concentrations of about 3 at.%. It is shown that grain boundaries and/or He bubbles can affect the vacancy fluxes inside the grains and reduce or even inhibit the Cu redistribution as well as the nucleation and growth of θ and θ′ Al-Cu precipitates during post-implantation annealings at temperatures from 473 to 553 K. It is also shown that mosaic-like grain structures allow the control of grain size distribution within the 25 to 1500 nm size range, thus providing an additional microstructure engineering tool to improve device reliability against electromigration failures.

Disordering behavior and helium diffusion in He+ irradiated 6H–SiC

2002 ◽  
Vol 17 (2) ◽  
pp. 271-274 ◽  
Author(s):  
W. Jiang ◽  
W. J. Weber ◽  
C. M. Wang ◽  
Y. Zhang
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Elastic Recoil ◽  
Transmission Electron Microscopy Study ◽  
Cross Sectional ◽  
Elastic Recoil Detection ◽  
Ion Channeling ◽  
Detection Analysis ◽  
Transmission Electron

Single-crystal 6H–SiC wafers were irradiated at 300 K with 50 keV He+ ions to fluences ranging from 7.5 to 250 He+/nm2. Ion-channeling experiments with 2.0 MeV He+ Rutherford backscattering spectrometry were performed to determine the depth profile of Si disorder. The measured profiles are consistent with SRIM-97 simulations at and below 45 He+/nm2 but higher than the SRIM-97 prediction at both 100 and 150 He+/nm2. Cross-sectional transmission electron microscopy study indicated that the volume expansion of the material is not significant at intermediate damage levels. Results from elastic recoil detection analysis suggested that the implanted He atoms diffuse in a high-damage regime toward the surface.

Dependence of the MoSe2 Formation on the Mo Orientation and the Na Concentration for Cu(In,Ga)Se2 Thin-Film Solar Cells

2005 ◽  
Vol 865 ◽  
Author(s):  
Daniel Abou-Ras ◽  
Debashis Mukherji ◽  
Gernot Kostorz ◽  
David Brémaud ◽  
Marc Kälin ◽  
...  
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Thin Film Solar Cells ◽  
Elastic Recoil ◽  
X Ray Diffraction ◽  
Elastic Recoil Detection Analysis ◽  
X Ray ◽  
Elastic Recoil Detection ◽  
Detection Analysis ◽  
Transmission Electron ◽  
Substrate Temperatures

AbstractThe formation of MoSe2 has been studied on polycrystalline Mo layers and on Mo single crystals in dependence of the Mo orientation, the Na concentration, and also as a function of the Se source and the substrate temperatures. The Mo substrates were selenized by evaporation of Se. The samples were analyzed by means of X-ray diffraction, Rutherford backscattering spectrometry, elastic recoil detection analysis, and by conventional and high-resolution transmission electron microscopy. It was found that the crystal structure and orientation of the MoSe2 layer change with increasing substrate temperature. However, the texture of MoSe2 does not depend on the orientation of the Mo substrate. It was also found that the MoSe2 growth is significantly influenced by the Na concentration at substrate temperatures of 450°C and 580°C.

High Quality P-Doped μc-Si:H Films as Obtained by low Temperature Lpcvd of Disilane

1992 ◽  
Vol 283 ◽  
Author(s):  
C. Manfredotti ◽  
F. Fizzotti ◽  
G. Amato ◽  
L. Boarino ◽  
M. Abbas
Keyword(s):  
Chemical Vapor ◽  
Elastic Recoil ◽  
Volume Percentage ◽  
Elastic Recoil Detection ◽  
Detection Analysis ◽  
Transmission Electron ◽  
Pressure Chemical ◽  
Convergent Beam ◽  
P Type ◽  
High Degree

ABSTRACTBoth B- and P- doped silicon films deposited by Low Pressure Chemical Vapor Deposition (LPCVD) at 300 °C (p-type) and 420 °C (n-type) have been characterized by optical absorption, Photothermal Deflection Spectroscopy (PDS), resistivity, Elastic Recoil Detection Analysis (ERDA), Transmission Electron Microscopy (TEM), Convergent-Beam Electron Diffraction (CBED) and Raman spectroscopy measurements. P-doped films, deposited at large PH3 flux rates, show a high degree of microcrystallinity, indicating that P activates the nucleation process even at low temperatures. In this case, values of activation energy of resistivity as low as 0.007 eV were obtained. Both TEM and RAMAN results confirm a volume percentage of micro crystallinity above 30%. On the contrary, B-doped samples are not microcrystalline at least in the doping range investigated, and show a behaviour not different from samples deposited by PECVD.

Characterization of Plasma Immersion Deposited Multilayer Coatings by Ion Beam Techniques Combined with Energy Filtered Transmission Electron Microscopy

2005 ◽  
Vol 908 ◽  
Author(s):  
Florian Schwarz ◽  
Joerg K. N. Lindner ◽  
Maik Häeberlen ◽  
Goetz Thorwarth ◽  
Claus Hammerl ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Ion Beam ◽  
Hard Coatings ◽  
Elemental Distribution ◽  
Elastic Recoil ◽  
Elastic Recoil Detection ◽  
Detection Analysis ◽  
Transmission Electron ◽  
Beam Analysis

AbstractMultilayered and nanostructured coatings of amorphous carbon (DLC), silicon composite multilayers and nanocluster containing films today have great potential for applications as hard coatings, wear reduction layers and as diffusion barriers in biomaterials. Plasma immersion ion implantation and deposition (PIII&D) is a powerful technique to synthesize such films. The quantitative nanoscale analysis of the elemental distribution in such multielemental films and thin film stacks however is demanding.In this paper it is shown how the high spatial resolution capabilities of energy filtered trans-mission electron microscopy (EFTEM) chemical analysis can be combined with accurate and standard-less concentration determination of ion beam analysis (IBA) techniques like Rutherford Backscattering Spectroscopy (RBS) and Elastic Recoil Detection Analysis (ERDA) to achieve absolute and accurate multielement concentration profiles in complicated nanomaterials.

scholarly journals Growth and characterization of TiN/SiN(001) superlattice films

2007 ◽  
Vol 22 (11) ◽  
pp. 3255-3264 ◽  
Author(s):  
Hans Söderberg ◽  
Magnus Odén ◽  
Axel Flink ◽  
Jens Birch ◽  
Per O.Å. Persson ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Layer Structure ◽  
Elastic Recoil ◽  
Reciprocal Space Mapping ◽  
Elastic Recoil Detection ◽  
Detection Analysis ◽  
Transmission Electron ◽  
Scanning Transmission

We report the layer structure and composition in recently discovered TiN/SiN(001) superlattices deposited by dual-reactive magnetron sputtering on MgO(001) substrates. High-resolution transmission electron microscopy combined with Z-contrast scanning transmission electron microscopy, x-ray reflection, diffraction, and reciprocal-space mapping shows the formation of high-quality superlattices with coherently strained cubic TiN and SiN layers for SiN thickness below 7–10 Å. For increasing SiN layer thicknesses, a transformation from epitaxial to amorphous SiNx (x ⩾ 1) occurs during growth. Elastic recoil detection analysis revealed an increase in nitrogen and argon content in SiNx layers during the phase transformation. The oxygen, carbon, and hydrogen contents in the multilayers were around the detection limit (∼0.1 at.%) with no indication of segregation to the layer interfaces. Nanoindentation experiments confirmed superlattice hardening in the films. The highest hardness of 40.4 ± 0.8 GPa was obtained for 20-Å TiN with 5-Å-thick SiN(001) interlayers, compared to monolithic TiN at 20.2 ± 0.9 GPa.

scholarly journals Micro-combinatorial sampling of the optical properties of hydrogenated amorphous $$\hbox {Si}_{1-x}\,\hbox {Ge}_{{x}}$$ for the entire range of compositions towards a database for optoelectronics

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Benjamin Kalas ◽  
Zsolt Zolnai ◽  
György Sáfrán ◽  
Miklós Serényi ◽  
Emil Agocs ◽  
...  
Keyword(s):  
Near Infrared ◽  
Rutherford Backscattering Spectrometry ◽  
Full Range ◽  
Localized States ◽  
Infrared Range ◽  
Optical Parameters ◽  
Elastic Recoil ◽  
Elastic Recoil Detection ◽  
Detection Analysis ◽  
Hydrogenated Amorphous

Abstract The optical parameters of hydrogenated amorphous a-$$\hbox {Si}_{1-x}\,\hbox {Ge}_{{x}}$$ Si 1 - x Ge x :H layers were measured with focused beam mapping ellipsometry for photon energies from 0.7 to 6.5 eV. The applied single-sample micro-combinatorial technique enables the preparation of a-$$\hbox {Si}_{1-x}\,\hbox {Ge}_{{x}}$$ Si 1 - x Ge x :H with full range composition spread. Linearly variable composition profile was revealed along the 20 mm long gradient part of the sample by Rutherford backscattering spectrometry and elastic recoil detection analysis. The Cody-Lorentz approach was identified as the best method to describe the optical dispersion of the alloy. The effect of incorporated H on the optical absorption is explained by the lowering of the density of localized states in the mobility gap. It is shown that in the low-dispersion near infrared range the refractive index of the a-$$\hbox {Si}_{1-x}\,\hbox {Ge}_x$$ Si 1 - x Ge x alloy can be comprehended as a linear combination of the optical parameters of the components. The micro-combinatorial sample preparation with mapping ellipsometry is not only suitable for the fabrication of samples with controlled lateral distribution of the concentrations, but also opens new prospects in creating databases of compounds for optical and optoelectonic applications.

Structural and mechanical properties of W-C: H coatings prepared by HiTUS

2021 ◽  
Vol 118 (2) ◽  
pp. 210
Author(s):  
Lenka Kvetková ◽  
Petra Hviščová ◽  
Zuzana Molčanová ◽  
Margita Kabátová ◽  
František Lofaj ◽  
...  
Keyword(s):  
Mechanical Properties ◽  
Carbon Matrix ◽  
Amorphous Structure ◽  
Bearing Steel ◽  
Elastic Recoil ◽  
X Ray Diffraction ◽  
Elastic Recoil Detection ◽  
Detection Analysis ◽  
Transmission Electron ◽  
Composition And Structure

The structure and mechanical properties of hydrogenated tungsten-carbon (W-C: H) coatings have been studied as a function of the composition and structure. These coatings were prepared by the High Target Utilization Sputtering (HiTUS), the first time used for this type of coatings. W-C: H coatings were deposited from tungsten–carbide target in argon, argon–acetylene (C2H2), and argon–methane (CH4) atmosphere on bearing steel 100Cr6 substrate, Al substrate, Si wafer a, and WC-Co substrate. W-C: H coatings obtained at different acetylene and methane flow were characterized by Elastic Recoil Detection Analysis (ERDA) and Rutherford Backscattering (RBS), X-ray diffraction, Transmission electron microscopy (TEM), and nanoindentation. Mechanical properties of these coatings are controlled within a range through a change in mutual concentration of crystalline phase and amorphous hydrogenated carbon matrix. The higher hardness (Hit = 29.5 ± 4.5 GPa) was measured for coating with 3 sccm methane addition. W-C: H coatings with more than 4 sccm of C2H2 and CH4 addition had fully amorphous structure and worse off mechanical properties.

scholarly journals Analytical Possibilities of Rutherford Backscattering Spectrometry and Elastic Recoil Detection Analysis Methods

2016 ◽  
Vol 26 (1) ◽  
pp. 83 ◽  
Author(s):  
Vu Duc Phu ◽  
Le Hong Khiem ◽  
A. P. Kobzev ◽  
M. Kulik
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Depth Resolution ◽  
Rutherford Backscattering ◽  
Elastic Recoil ◽  
Elastic Recoil Detection Analysis ◽  
Near Surface ◽  
Elastic Recoil Detection ◽  
Depth Profiles ◽  
Detection Analysis ◽  
Three Samples

This paper presents the results of an experimental study of three samples containing various elements in the near-surface layers. The depth profiles of all the elements of different atomic masses from hydrogen to silver were investigated by Rutherford Backscattering Spectrometry (RBS) and Elastic Recoil Detection Analysis (ERDA). The experiments were performed by using the low-energy (about 2 MeV) 4He+ ion beams. The obtained results demonstrate the possibility of the RBS and ERDA methods in the investigation of depth profiles of any mass element with an atomic concentration of about 0.01 at.% and a depth resolution close to 10 nm.

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