ALL-POLYMER BASED FLEXIBLE FIELD EFFECT TRANSISTOR USING POLY(3,4-ETHYLENEDIOXYTHIOPHENE) (PEDOT) AND POLYPYRROLE (PPY)

We fabricated all-polymer based flexible field effect transistors (FETs) using poly (3,4-ethylenedioxythiophene) (PEDOT) or polypyrrole (PPy) as the active layer and gate electrode. Polyvinyle cinnamate (PVCN) and epoxy were used for a dielectric layer. The PEDOT and PPy as the active layer and electrode were patterned through simple photo-lithography, and PVCN and epoxy as insulating layers were coated by using a spin-coater. We estimated the threshold voltage and trans-conductance through measuring the drain-source current (I ds ) as a function of gate bias (V g ). We suggest that ionic motion in the active layer plays an important role for electrical properties.

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Enhancing photoresponse by synergy of electric double layer gate and illumination in single CuTCNQ NW field effect transistors

Electronics Science Technology and Application ◽

10.18686/esta.v5i1.66 ◽

2018 ◽

Vol 5 (1) ◽

Author(s):

Rabaya Basori

Keyword(s):

Double Layer ◽

Electric Double Layer ◽

Field Effect ◽

Field Effect Transistor ◽

Charge Transfer Complex ◽

Field Effect Transistors ◽

Gate Bias ◽

Electron Hole ◽

Metal Organic ◽

Effect Transistor

We report that photoresponse of a single metal-organic charge transfer complex Cu:TCNQ nanowire (NW) can be enhanced simultaneously by illumination as well as applying a gate bias in an Electric Double Layer Field Effect Transistor (EDL-FET) configuration fabricated on Cu:TCNQ as a channel.It is observed that applying a bias using an EDL gate to a n-channel Cu:TCNQ single NW FET, one can enhance the photoresponse of the Cu:TCNQ substantially over that which arise from the photoconductive response alone. Electron-hole pairs that generate in the NW under illuminated of wavelength 400nm gives rise photo current. Also, electric double layer induce negative charges in the NW channel which effectively increases the carrier concentration, contributing to better response in conduction. The effect reported here has a generic nature that gives rise to a class of gated photodetectors of different photoresponsive materials.

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Electrical properties of field-effect transistor with interlinked ZnO tetrapod network as an active layer

Surface and Coatings Technology ◽

10.1016/j.surfcoat.2016.04.022 ◽

2016 ◽

Vol 306 ◽

pp. 41-44 ◽

Cited By ~ 2

Author(s):

Witawat Ponhan ◽

Meechai Thepnurat ◽

Surachet Phadungdhitidhada ◽

Duangmanee Wongratanaphisan ◽

Supab Choopun

Keyword(s):

Electrical Properties ◽

Active Layer ◽

Field Effect ◽

Field Effect Transistor ◽

Effect Transistor

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UV-Assisted Gate Bias Cycling in Gas-Sensitive Field-Effect Transistors

Proceedings ◽

10.3390/proceedings2130999 ◽

2018 ◽

Vol 2 (13) ◽

pp. 999

Author(s):

Manuel Bastuck ◽

Donatella Puglisi ◽

Anita Lloyd Spetz ◽

Andreas Schütze ◽

Tilman Sauerwald ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Field Effect Transistors ◽

Dynamic Responses ◽

Gate Bias ◽

Dynamic Effects ◽

Temperature Dependent ◽

Relaxation Effects ◽

Gas Identification ◽

Effect Transistor

Static and dynamic responses of a silicon carbide field-effect transistor gas sensor have been investigated at two different gate biases in several test gases. Especially the dynamic effects are gas dependent and can be used for gas identification. The addition of ultraviolet light reduces internal electrical relaxation effects, but also introduces new, temperature-dependent effects.

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Gate-bias instability of few-layer WSe2 field effect transistors

RSC Advances ◽

10.1039/d0ra09376a ◽

2021 ◽

Vol 11 (12) ◽

pp. 6818-6824

Author(s):

Shaofeng Wen ◽

Changyong Lan ◽

Chun Li ◽

Sihan Zhou ◽

Tianying He ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Field Effect Transistors ◽

Gate Bias ◽

Bias Stress ◽

Effect Transistor ◽

P Type ◽

Bias Instability ◽

Gate Bias Stress

The performance of the few-layer p-type WSe2-based field effect transistor is sensitive to the environment and gate bias stress.

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Demonstration of the enhancement of gate bias and ionic strength in electric-double-layer field-effect-transistor biosensors

Sensors and Actuators B Chemical ◽

10.1016/j.snb.2021.129567 ◽

2021 ◽

Vol 334 ◽

pp. 129567

Author(s):

Chang-Run Wu ◽

Shin-Li Wang ◽

Po-Hsuan Chen ◽

Yu-Lin Wang ◽

Yu-Rong Wang ◽

...

Keyword(s):

Ionic Strength ◽

Double Layer ◽

Electric Double Layer ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Bias ◽

Effect Transistor

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On Razors Edge: Influence of the Source Insulator Edge on the Charge Transport of Vertical Organic Field Effect Transistors

MRS Advances ◽

10.1557/adv.2017.29 ◽

2017 ◽

Vol 2 (23) ◽

pp. 1249-1257 ◽

Cited By ~ 1

Author(s):

F. Michael Sawatzki ◽

Alrun A. Hauke ◽

Duy Hai Doan ◽

Peter Formanek ◽

Daniel Kasemann ◽

...

Keyword(s):

Charge Transport ◽

Organic Semiconductors ◽

Organic Solar Cells ◽

Field Effect ◽

Field Effect Transistor ◽

Field Effect Transistors ◽

Electrical Power ◽

Strong Impact ◽

Organic Field Effect Transistor ◽

Effect Transistor

ABSTRACTTo benefit from the many advantages of organic semiconductors like flexibility, transparency, and small thickness, electronic devices should be entirely made from organic materials. This means, additionally to organic LEDs, organic solar cells, and organic sensors, we need organic transistors to amplify, process, and control signals and electrical power. The standard lateral organic field effect transistor (OFET) does not offer the necessary performance for many of these applications. One promising candidate for solving this problem is the vertical organic field effect transistor (VOFET). In addition to the altered structure of the electrodes, the VOFET has one additional part compared to the OFET – the source-insulator. However, the influence of the used material, the size, and geometry of this insulator on the behavior of the transistor has not yet been examined. We investigate key-parameters of the VOFET with different source insulator materials and geometries. We also present transmission electron microscopy (TEM) images of the edge area. Additionally, we investigate the charge transport in such devices using drift-diffusion simulations and the concept of a vertical organic light emitting transistor (VOLET). The VOLET is a VOFET with an embedded OLED. It allows the tracking of the local current density by measuring the light intensity distribution.We show that the insulator material and thickness only have a small influence on the performance, while there is a strong impact by the insulator geometry – mainly the overlap of the insulator into the channel. By tuning this overlap, on/off-ratios of 9x105 without contact doping are possible.

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2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

Materials Advances ◽

10.1039/d1ma00215e ◽

2021 ◽

Author(s):

Suman Yadav ◽

Shivani Sharma ◽

Satinder K Sharma ◽

Chullikkattil P. Pradeep

Keyword(s):

Organic Semiconductors ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Field Effect Transistors ◽

Organic Field Effect Transistors ◽

Organic Thin Film ◽

Effect Transistor ◽

Solution Processable ◽

P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

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Silicon Field Effect Transistor as the Nonlinear Detector for Terahertz Autocorellators

Sensors ◽

10.3390/s18113735 ◽

2018 ◽

Vol 18 (11) ◽

pp. 3735 ◽

Cited By ~ 6

Author(s):

Kęstutis Ikamas ◽

Ignas Nevinskas ◽

Arūnas Krotkus ◽

Alvydas Lisauskas

Keyword(s):

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Cryogenic Cooling ◽

Thz Radiation ◽

Gate Bias ◽

Large Signal ◽

Wide Range ◽

Effect Transistor ◽

Thz Power

We demonstrate that the rectifying field effect transistor, biased to the subthreshold regime, in a large signal regime exhibits a super-linear response to the incident terahertz (THz) power. This phenomenon can be exploited in a variety of experiments which exploit a nonlinear response, such as nonlinear autocorrelation measurements, for direct assessment of intrinsic response time using a pump-probe configuration or for indirect calibration of the oscillating voltage amplitude, which is delivered to the device. For these purposes, we employ a broadband bow-tie antenna coupled Si CMOS field-effect-transistor-based THz detector (TeraFET) in a nonlinear autocorrelation experiment performed with picoseconds-scale pulsed THz radiation. We have found that, in a wide range of gate bias (above the threshold voltage V th = 445 mV), the detected signal follows linearly to the emitted THz power. For gate bias below the threshold voltage (at 350 mV and below), the detected signal increases in a super-linear manner. A combination of these response regimes allows for performing nonlinear autocorrelation measurements with a single device and avoiding cryogenic cooling.

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