Investigation of the deformation behavior in nanoindented metal/nitride multilayers by coupling FIB-TEM and AFM observations

2005 ◽  
Vol 880 ◽  
Author(s):  
G. Abadias ◽  
C. Tromas ◽  
Y.Y. Tse ◽  
A. Michel
Keyword(s):  
Deformation Behavior ◽  
Focused Ion Beam ◽  
Mechanical Response ◽  
Ion Beam ◽  
Dislocation Motion ◽  
Ion Beam Sputtering ◽  
Force Microscopy ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Beam Transmission

AbstractEpitaxial TiN/Cu bilayers and multilayers with periods L between 5 and 50 nm have been grown by ultrahigh vacuum ion beam sputtering on Si and MgO(001) substrates at room temperature. The deformation modes induced by a Berkovich nanoindent have been imaged using Focused Ion Beam – Transmission Electron Microscopy (FIB-TEM) and Atomic Force Microscopy (AFM). The observations suggest that the mechanical response of the multilayers is essentially governed by an extensive plastic flow inside the Cu layers, which is confined by a bending of the more rigid TiN layers. This specific deformation behavior, with no contribution of the interfaces as a barrier for dislocation motion could explain the absence of significant hardness enhancement in this system.

TEM Study of Co/Pd and Co/Au Multilayers

1993 ◽  
Vol 51 ◽  
pp. 1036-1037
Author(s):  
A.E.M. De Veirman ◽  
F.J.G. Hakkens ◽  
W.M.J. Coene ◽  
F.J.A. den Broeder
Keyword(s):  
Magnetic Anisotropy ◽  
Ion Beam ◽  
Perpendicular Magnetic Anisotropy ◽  
Optical Recording ◽  
Magnetic Multilayer ◽  
Ion Beam Sputtering ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Beam Sputtering ◽  
Substrate Temperatures

There is currently great interest in magnetic multilayer (ML) thin films (see e.g.), because they display some interesting magnetic properties. Co/Pd and Co/Au ML systems exhibit perpendicular magnetic anisotropy below certain Co layer thicknesses, which makes them candidates for applications in the field of magneto-optical recording. It has been found that the magnetic anisotropy of a particular system strongly depends on the preparation method (vapour deposition, sputtering, ion beam sputtering) as well as on the substrate, underlayer and deposition temperature. In order to get a better understanding of the correlation between microstructure and properties a thorough cross-sectional transmission electron microscopy (XTEM) study of vapour deposited Co/Pd and Co/Au (111) MLs was undertaken (for more detailed results see ref.).The Co/Pd films (with fixed Pd thickness of 2.2 nm) were deposited on mica substrates at substrate temperatures Ts of 20°C and 200°C, after prior deposition of a 100 nm Pd underlayer at 450°C.

Formation of Luminescent Si Nanocrystals by High-Temperature Annealing of Ion-Beam-Sputtered Si/SiO2 Multilayers

2003 ◽  
Vol 775 ◽  
Author(s):  
Suk-Ho Choi ◽  
Jun Sung Bae ◽  
Kyung Jung Kim ◽  
Dae Won Moon
Keyword(s):  
Quantum Confinement ◽  
Radiative Recombination ◽  
Ion Beam ◽  
Quantum Confinement Effect ◽  
Visible Range ◽  
Ion Beam Sputtering ◽  
Transmission Electron ◽  
Si Nanocrystals ◽  
Beam Sputtering ◽  
Microscopy Images

AbstractSi/SiO2 multilayers (MLs) have been prepared under different deposition temperatures (TS) by ion beam sputtering. The annealing at 1200°C leads to the formation of Si nanocrystals in the Si layer of MLs. The high resolution transmission electron microscopy images clearly demonstrate the existence of Si nanocrystals, which exhibit photoluminescence (PL) in the visible range when TS is ≥ 300°C. This is attributed to well-separation of nanocrystals in the higher-TS samples, which is thought to be a major cause for reducing non-radiative recombination in the interface between Si nanocrystal and surface oxide. The visible PL spectra are enhanced in its intensity and are shifted to higher energy by increasing TS. These PL behaviours are consistent with the quantum confinement effect of Si nanocrystals.

scholarly journals Micrometer-scale machining of metals and polymers enabled by focused ion beam sputtering

1998 ◽  
Vol 546 ◽  
Author(s):  
D. P. Adams ◽  
G. L. Benavides ◽  
M. J. vasile
Keyword(s):  
Focused Ion Beam ◽  
Ion Beam ◽  
Ion Beam Sputtering ◽  
Beam Sputtering ◽  
End Mills ◽  
Ultra Precision ◽  
Tool Shank ◽  
Micrometer Scale ◽  
Tool Cutting ◽  
Micro Tools

AbstractThis work combines focused ion beam sputtering and ultra-precision machining for microfabrication of metal alloys and polymers. Specifically, micro-end mills are made by Ga ion beam sputtering of a cylindrical tool shank. Using an ion energy of 20keV, the focused beam defines the tool cutting edges that have submicrometer radii of curvature. We demonstrate 25μm diameter micromilling tools having 2, 4 and 5 cutting edges. These tools fabricate fine channels, 26–28 microns wide, in 6061 aluminum, brass, and polymethyl methacrylate. Micro-tools are structurally robust and operate for more than 5 hours without fracture.

Probing the metal gate high k interactions by backside XPS and C-AFM

2011 ◽  
Vol 1336 ◽  
Author(s):  
U. Celano ◽  
T. Conard ◽  
T. Hantschel ◽  
W. Vandervorst
Keyword(s):  
Ion Beam ◽  
Electrical Performance ◽  
Ion Beam Sputtering ◽  
Metal Gate ◽  
Gate Stack ◽  
Conductive Atomic Force Microscopy ◽  
Characterization Methods ◽  
Force Microscopy ◽  
High K ◽  
Beam Sputtering

ABSTRACTThe metal gate high k interaction is one of the dominant processes influencing the electrical performance (Vt, charge accumulation,..) of advanced gate stacks. These interactions are influenced by the entire thermal budget and the presence of reactive elements (on top/ within the material gate) such that relevant measurements can only be performed after a full processing cycle and on a complete gate stack.In such cases the relevant metal gate high k interface is a buried interface located below the metal gate (+ Si cap) and is not accessible for standard characterization methods like x-ray photoemission spectroscopy (XPS) due the limited escape depth of the photoelectrons. Moreover the presence of a conductive metal gate prevents the application of techniques such as conductive atomic force microscopy (C-AFM), to probe the local distribution of the defects, trapping sites and local degradation upon stressing. XPS in combination with layer removal steps like ion beam sputtering will destroy the bonding information and is thus not applicable. Chemical etching of the metal gate stack prior to the XPS measurements requires an extremely precious control of the etching in order to stop 1-2 nm before the high k metal interface.As an alternative we have developed a backside removal approach, that allows us to investigate using techniques such as XPS and C-AFM, the metal gate high k interface.

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