Cross-sectional TEM and corrosion studies of Al and N implanted copper

1987 ◽  
Vol 93 ◽  
Author(s):  
E. Gerritsen ◽  
H. J. Ligthart ◽  
T. E. G. Deenen
Keyword(s):  
Electron Microscopy ◽  
High Dose ◽  
Copper Sulphide ◽  
Cross Sectional ◽  
Damage Layer ◽  
Implantation Damage ◽  
Transmission Electron ◽  
Corrosion Studies ◽  
Copper Single Crystals

ABSTRACTPoly- and single crystalline copper was implanted with aluminium and nitrogen at doses ranging from 1016 to 5 × 1017 at/cm2 and energies of 170 keV. The corrosion resistance of the implanted surfaces was tested by exposure to an H25-containing atmosphere. The amount of copper sulphide formed was measured by chrono potentiometric reduction. The amount of corrosion products was markedly reduced (up to a factor 50) by high dose implantations of aluminium. The microstructure of the implanted copper was examined by Transmission Electron Microscopy of cross-sectioned specimens. A deep damage layer far exceeding the ion range was observed. XTEM-pictures of aluminium implanted copper single crystals of various orientations suggest a channeling mechanism for this deep damage layer. In situ annealing of the specimens in the TEM showed that most of the implantation damage is removed at 600°C except for an array of dislocations at the end of the damage range.

Low Temperature Silicon Epitaxial Growth by Plasma Enhanced Chemical Vapor Deposition From SiH4/He/H2

1991 ◽  
Vol 235 ◽  
Author(s):  
Yung-Jen Lin ◽  
Ming-Deng Shieh ◽  
Chiapying Lee ◽  
Tri-Rung Yew
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Epitaxial Layers ◽  
Cross Sectional ◽  
Transmission Electron

ABSTRACTSilicon epitaxial growth on silicon wafers were investigated by using plasma enhanced chemical vapor deposition from SiH4/He/H2. The epitaxial layers were growm at temperatures of 350°C or lower. The base pressure of the chamber was greater than 2 × 10−5 Torr. Prior to epitaxial growth, the wafer was in-situ cleaned by H2 baking for 30 min. The epi/substrate interface and epitaxial layers were observed by cross-sectional transmission electron microscopy (XTEM). Finally, the influence of the ex-situ and in-situ cleaning processes on the qualities of the interface and epitaxial layers was discussed in detail.

Formation of Nanovoids and Nanocolumns in High Dose Hydrogen Implanted ZnO Bulk Crystals

2006 ◽  
Vol 957 ◽  
Author(s):  
Rajendra Singh ◽  
R. Scholz ◽  
U. Gösele ◽  
S. H. Christiansen
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Dose ◽  
Hydrogen Ions ◽  
Bulk Crystals ◽  
Cross Sectional ◽  
Projected Range ◽  
Transmission Electron ◽  
Wafer Surfaces ◽  
Post Implantation

ABSTRACTZnO(0001) bulk crystals were implanted with 100 keV H2+ ions with various doses in the range of 5×1016 to 3×1017 cm-2. The ZnO crystals implanted up to a dose of 2.2×1017 cm-2 did not show any surface exfoliation, even after post-implantation annealing at temperatures up to 800°C for 1 h while those crystals implanted with a dose of 2.8×1017 cm-2 or higher exhibited exfoliated surfaces already in the as-implanted state. In a narrow dose window in between, controlled exfoliation could be obtained upon post-implantation annealing only. Cross-sectional transmission electron microscopy (XTEM) of the implanted ZnO samples showed that a large number of nanovoids were formed within the implantation-induced damage band. These nanovoids served as precursors for the formation of microcracks leading to the exfoliation of ZnO wafer surfaces. In addition to the nanovoids, elongated nanocolumns perpendicular to the ZnO wafer surfaces were also observed. These nanocolumns showed diameters of up to 10 nm and lengths of up to 500 nm. The nanocolumns were found in the ZnO wafer even well beyond the projected range of hydrogen ions.

High Resolution Transmission Electron Microscopy of Proton Implanted Gallium Arsenide

1985 ◽  
Vol 46 ◽  
Author(s):  
D. K. Sadana ◽  
J. M. Zavada ◽  
H. A. Jenkinson ◽  
T. Sands
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Phenomenological Model ◽  
Room Temperature ◽  
Stacking Faults ◽  
High Dose ◽  
Cross Sectional ◽  
Projected Range ◽  
Transmission Electron

AbstractHigh resolution transmission electron microscopy (HRTEM) has been performed on cross-sectional specimens from high dose (1016 cm−2) H+ implanted (100) GaAs (300 keV at room temperature). It was found that annealing at 500°C created small (20-50Å) loops on {111} near the projected range (Rp)(3.2 μm). At 550-600°C, voids surrounded by stacking faults, microtwins and perfect dislocations were observed near the Rp. A phenomenological model explaining the observed results is proposed.

Low Temperature Silicon Epitaxial Growth by Plasma Enhanced Chemical Vapor Deposition from SiH4/He/H2

1991 ◽  
Vol 236 ◽  
Author(s):  
Yung-Jen Lin ◽  
Ming-Deng Shieh ◽  
Chiapying Lee ◽  
Tri-Rung Yew
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Ex Situ ◽  
Epitaxial Layers ◽  
Cross Sectional ◽  
Transmission Electron

AbstractSilicon epitaxial growth on silicon wafers were investigated by using plasma enhanced chemical vapor deposition from SiH4/He/H2. The epitaxial layers were growm at temperatures of 350°C or lower. The base pressure of the chamber was greater than 2 × 10−5 Torr. Prior to epitaxial growth, the wafer was in-situ cleaned by H2 baking for 30 min. The epi/substrate interface and epitaxial layers were observed by cross-sectional transmission electron microscopy (XTEM). Finally, the influence of the ex-situ and in-situ cleaning processes on the qualities of the interface and epitaxial layers was discussed in detail.

High-temperature in situ Cross-sectional Transmission Electron Microscopy Investigation of Crystallization Process of Yttrium-stabilized Zirconia/Si and Yttrium-stabilized Zirconia/SiOx/Si Thin Films

2005 ◽  
Vol 20 (7) ◽  
pp. 1878-1887 ◽  
Author(s):  
Takanori Kiguchi ◽  
Naoki Wakiya ◽  
Kazuo Shinozaki ◽  
Nobuyasu Mizutani
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Temperature ◽  
Crystallization Process ◽  
Stabilized Zirconia ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron ◽  
Tem Method

The crystallization process of yttria-stabilized zirconia (YSZ) gate dielectrics deposited on p-Si (001) and SiOx/p-Si(001) substrates and the growth process of SiOx has been investigated directly using high-temperature in situ cross-sectional view transmission electron microscopy (TEM) method and high-temperature plan-view in-situ TEM method. The YSZ layer is crystallized by the nucleation and growth mechanism at temperatures greater than 573 K. Nucleation originates from the film surface. Nucleation occurs randomly in the YSZ layer. Subsequently, the crystallized YSZ area strains the Si surface. Finally, it grows in the in-plane direction with the strain, whereas, if a SiOx layer of 1.4 nm exists, it absorbs the crystallization strain. Thereby, an ultrathin SiOx layer can relax the strain generated in the Si substrate in thin film crystallization process.

In-Situannealing Transmission Electron Microscopy(Tem) Study of the Ti/GaAs Interfacial Reactions

1989 ◽  
Vol 148 ◽  
Author(s):  
Ki-Bum Kim ◽  
Robert Sinclair
Keyword(s):  
Electron Microscopy ◽  
Gaas Substrate ◽  
Metal Film ◽  
Interfacial Reactions ◽  
Cross Sectional ◽  
Plan View ◽  
Transmission Electron ◽  
Initial Stage ◽  
Random Manner

ABSTRACTIn-situ annealing TEM experiments were performed on the Ti/GaAs system in order to study the dynamic behavior of interfacial reactions. Both plan-view and cross-sectional samples were investigated in either diffraction and imaging (both conventional and high resolution) modes. During experiments, we observed the following: (a) At the initial stage of reaction, the TiAs phase formed at the original Ti/GaAs interface with a distinct orientation with respect to the substrate; (b) as the reaction proceeded, the TiAs phase formed in a random manner; (c) finally, the liberated Ga species from the GaAs diffused out to the metal film and formed TiGa2 phase in the plan-view sample similar to the furnace-annealed case. For the cross-sectional sample, however, we did not observe any Ti:Ga phase formation. Instead, we observed the formation of voids both in the Ti film and in the GaAs substrate. The formation of different microstructure between in-situ and furnace annealed cases is explained by the sample geometry during annealing.

In Situ Fabrication and Characterization of (NiCr)Al-Al2O3 Nanocomposite by Mechanical Alloying

2012 ◽  
Vol 16 ◽  
pp. 21-27 ◽  
Author(s):  
Amir Reza Shirani-Bidabadi ◽  
Ali Shokuhfar ◽  
Mohammad Hossein Enayati ◽  
Mazda Biglari
Keyword(s):  
Electron Microscopy ◽  
Mechanical Alloying ◽  
Structural Changes ◽  
Formation Mechanisms ◽  
Cross Sectional ◽  
Molar Ratios ◽  
Transmission Electron ◽  
Powder Particles

In this research, the formation mechanisms of a (NiCr)Al-Al2O3 nanocomposite were investigated. The structural changes of powder particles during mechanical alloying were studied by X-ray difractometry (XRD) and the morphology and cross sectional microstructure of powder particles were characterized by transmission electron microscopy (TEM) and scanning electron microscopy (SEM). The methodology involved mechanical alloying of NiO, Cr, and Al with molar ratios of 3:3:8. During mechanical alloying, NiO was first quickly reduced by aluminum atoms to produce NiAl nanocrystalline and Al2O3. Subsequently, and when a longer milling time was applied, chromium atoms diffused into the NiAl lattice. The heat treatment of this structure led to the formation of the (NiCr)Al intermetallic compound as well as Al2O3 with crystalline sizes of 23 nm and 58 nm, respectively.

In situ and ex situ transmission electron microscopy investigation of Cu–Al–Cu–Ti reactive metallic multilayer coatings

2010 ◽  
Vol 25 (6) ◽  
pp. 1196-1203 ◽  
Author(s):  
M.A. Mat Yajid ◽  
H. Bagshaw ◽  
G. Möbus
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Ex Situ ◽  
Alloy Formation ◽  
Cross Sectional ◽  
Multilayer Systems ◽  
Transmission Electron ◽  
Reactive Sample ◽  
In Situ Heating

Metallic multilayers of Cu/Al/Ti composition were studied by transmission electron microscopy (TEM) and plasmon energy-loss mapping as prototypes of nanoscale reactive multilayer systems with exothermic alloy formation in oxygen-free conditions. The selection and arrangement of alloy phases by the system during ex situ and in situ heating experiments were found to depend not only on temperature but strongly on the initial volume ratios of metals, and to a lesser degree on the dimensionality of the reactive sample. Here, a two-dimensional sample was represented by ex situ heating of the full multilayer structure, a one-dimensional sample refers to in situ heating of thin cross-sectional TEM specimens, while a zero-dimensional sample (or metallic dot-array) was obtained after cutting thin pillars using focused ion beams. Lamellar self-organized alternation between Heusler phase and Cu9Al4 was found.

High Dose Implantation of Nickel into Silicon

1985 ◽  
Vol 54 ◽  
Author(s):  
G. J. Campisi ◽  
H. B. DIETRICH ◽  
M. Delfino ◽  
D. K. Sadana
Keyword(s):  
Electron Microscopy ◽  
Solid Phase ◽  
Ion Beam ◽  
Depth Profiling ◽  
Silicon Wafers ◽  
High Dose ◽  
Ion Beam Sputtering ◽  
Cross Sectional ◽  
Transmission Electron ◽  
Beam Sputtering

ABSTRACTSeveral silicon wafers were implanted with 58Ni+ at an energy of 170 keV and a current density of 12 μA cm-2 to doses between 5 × 1015 and 1.8 × 1018 ions cm-2. The substrates were phosphorus doped n-type <100> Czochralski grown silicon wafers. The wafers were water cooled during implantation and the surface temperatures was monitored with an infrared pyrometer and controlled to < 70°C. Samples were subsequently furnace annealed at 900°C for 30 min in nitrogen. The as-implanted and annealed samples were analyzed using cross-sectional transmission electron microscopy (XTEM), Rutherford backscattering (RBS) spectroscopy, spreading resistance depth profiling (SRP), and scanning electron microscopy (SEM). Micro-crystallites of NiSi2 (2–5nm) buried within an amorphous matrix formed during the 1.5 × 1017 ions cm-2 dose implantation. For higher doses above 3 × 1017 Ni+ cm-2, ion beam sputtering occurred. After annealing, rapid diffusion of nickel and solid-phase recrystallization of the amorphous regions occurred.

FIB-TEM Characterization of Locally Restricted Implantation Damage

2002 ◽  
Vol 738 ◽  
Author(s):  
Heinz D. Wanzenboeck ◽  
Stefan Harasek ◽  
Wolfgang Brezna ◽  
Alois Lugstein ◽  
Helmut Langfischer ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Defect Analysis ◽  
Multilayered Structures ◽  
Damage Layer ◽  
Implantation Damage ◽  
Transmission Electron ◽  
High Resolution Tem

ABSTRACTImaging critical features by using transmission electron microscopy (TEM) or scanning electron microscopy (SEM) provides a versatile approach for nanostructure characterization. The combination of focused ion beam (FIB) technology for exposing defective sites beneath the surface is shown. Reliability testing and defect analysis by localized characterization of multilayered structures is demonstrated. TEM-imaging of a transistor gate with a locally confined radiation damage demonstrates target preparation by FIB yielding high-resolution TEM samples. The TEM imaging requires a longer sample preparation but provides high image quality (TEM). Investigation of materials previously processed with FIB revealed amorphization damage by the high energetic Ga-ion beam. This damage layer with a thickness in the range of 50 to 100 nm was confirmed in simulation. This disadvantageous damage by amorphization originating from FIB preparation of the cross-section could be removed by soft sputtering with a 250 V Ar+ ion beam. This combined method using FIB for microsample preparation and TEM for imaging and analysis was proven to be a powerful tool the exploitation of nanostructured devices and for defect analysis on a highly localized scale.

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