Ion Channeling Studies of Crystallinity, Amorphization, and Thermal Annealing in Single-Crystal YBa2Cu3Ox.

1987 ◽  
Vol 99 ◽  
Author(s):  
N. G. Stoffel ◽  
W. A. Bonner ◽  
P. A. Morris ◽  
B. J. Wilkens
Keyword(s):  
Single Crystals ◽  
High Temperature Superconductor ◽  
Solid Phase ◽  
Amorphous Layer ◽  
Surface Layers ◽  
Ion Channeling ◽  
Oxygen Ion ◽  
Surface Disorder ◽  
Axial Channeling ◽  
Oxygen Ion Implantation

ABSTRACTWe have performed Rutherford backscattering spectroscopy (RBS) and axial channeling on single crystals of the high-temperature superconductor YBa2Cu3Ox. The results demonstrate good crystal quality and cation stoichiometry in the as-grown samples. We observe some surface disorder, and estimate from the surface-peak intensities that there is roughly one formula unit of misregistered atoms per unit cell, or one molecular monolayer of surface disorder.We have studied the surface disorder induced in these crystals by various surface processing treatments, and have tried to achieve solid-phase epitaxial regrowth of disordered surface layers. Preliminary results have been obtained on the annealing of 100 nm amorphous layers formed on the surface of single crystals by 30 keV oxygen ion implantation. The Ba in the amorphous layer was found to segregate strongly to the surface for annealing temperatures as low as 500°C, although the crystalline phase does not decompose even at much higher temperatures.

XPS studies of SiO2 surface layers formed by oxygen ion implantation into silicon

1983 ◽  
Vol 76 (1) ◽  
pp. K21-K24 ◽  
Author(s):  
D. Schulze ◽  
J. Finster ◽  
E. Hensel ◽  
W. Skorupa ◽  
U. Kreissig
Keyword(s):  
Ion Implantation ◽  
Surface Layers ◽  
Sio2 Surface ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The effect of annealing environments on the epitaxial recrystallization of ion-beam-amorphized SrTiO3

1992 ◽  
Vol 7 (3) ◽  
pp. 717-724 ◽  
Author(s):  
J. Rankin ◽  
J.C. McCallum ◽  
L.A. Boatner
Keyword(s):  
Activation Energy ◽  
Solid Phase ◽  
Ion Beam ◽  
Amorphous Layer ◽  
Surface Layers ◽  
Time Resolved ◽  
Near Surface ◽  
Thermally Induced ◽  
Stage Process ◽  
Single Constant

Time-resolved reflectivity and Rutherford backscattering spectroscopy were used to investigate the effects of regrowth environments on the thermally induced solid phase epitaxial (SPE) regrowth of amorphous near-surface layers produced by ion implantation of single-crystal SrTiO3. Water vapor in the regrowth atmosphere was found to alter both the apparent rate and activation energy of the SPE regrowth. For relatively dry atmospheres, a single constant regrowth rate is observed at any given temperature, and the activation energy is 1.2 ± 0.1 eV. When the concentration of H2O vapor in the atmosphere is increased, however, the regrowth activation energy effectively decreases to ∼0.95 eV. When regrown in atmospheres containing H2O vapor, the SrTiO3 amorphous layer exhibits two distinct stages of SPE regrowth as compared to the single rate found for dry anneals. This two-stage process apparently results from the diffusion of H/OH from the regrowth atmosphere at the surface of the crystal through the amorphous layer to the regrowing crystalline/amorphous interface.

Production and Properties of Amorphous Layers on Metal Substrates by Laser and Electron Beam Melting

1981 ◽  
Vol 8 ◽  
Author(s):  
H.W. Bergmann ◽  
B.L. Mordike
Keyword(s):  
Electron Beam ◽  
Laser Beam ◽  
Single Crystals ◽  
Electron Beam Melting ◽  
Cold Working ◽  
Amorphous Layer ◽  
Laser Glazing ◽  
Surface Layers ◽  
Metal Substrates ◽  
Amorphous Surface

ABSTRACTVarious techniques of laser glazing are presented. Rules are given for the choise of systems which are suitable for producing amorphous surface layers. Methods of demonstrating the existence of a truly amorphous layer are discussed. Two examples are given: I) electron beam glazing of Ni-Nb coated single crystals 2) laser beam glazing of Fe-B coated Fe-Cr-C cold working steel.

Effect of the oxygen ion implantation on the physicochemical surface structure and corrosion-electrochemical behavior of high-chromium steel

2020 ◽  
Vol 6 ◽  
pp. 7-17
Author(s):  
S.G. Bystrov ◽  
◽  
S.M. Reshetnikov ◽  
А.А. Kolotov ◽  
А.Yu. Drozdov ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Electrochemical Behavior ◽  
Photoelectron Spectroscopy ◽  
Surface Passivation ◽  
Chromium Steel ◽  
Surface Layers ◽  
High Chromium ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation ◽  
Corrosion Electrochemical Behavior

Potentiometry, atomic force microscopy, X-ray photoelectron spectroscopy, and microhardness measurements have been used to study the effect of oxygen ion implantation on the physicochemical structure of the surface and the corrosion-electrochemical behavior of high-chromium Fe-13Cr steel. It has been established that ion implantation leads to a significant reduction in material corrosion losses. Optimal from the point of view of surface passivation and, consequently, reduction of corrosion losses of the material is the regime of steel treatment with oxygen ions with a dose of D = 5·1016 cm–2 after which the sample demonstrates the most stable behavior during local and continuous corrosion. It is shown that the increase in the corrosion resistance of steel is due to the redistribution of elements in the surface layers of the samples caused by ion implantation and the intensive formation of spinels of variable composition, consisting of iron and chromium oxides with different oxidation states. In this case, the microhardness of the surface layers of the steel after ion implantation does not change significantly.

Damage Evolution in Xe-Ion Irradiated Rutile (TiO2) Single Crystals

1998 ◽  
Vol 540 ◽  
Author(s):  
Fuxin Li ◽  
Ping Lu ◽  
Kurt E. Sickafus ◽  
Caleb R. Evans ◽  
Michael Nastasi
Keyword(s):  
Single Crystals ◽  
Ion Irradiation ◽  
Amorphous Layer ◽  
High Concentration ◽  
Cross Sectional ◽  
Defect Migration ◽  
Ion Channeling ◽  
Projected Range ◽  
Transmission Electron ◽  
Nucleation Sites

AbstractRutile (TiO2) single crystals with (110) orientation were irradiated with 360 keV Xe2+ ions at 300K to fluences ranging from 2×1019 to 1×1020 Xe/m2. Irradiated samples were analyzed using: (1) Rutherford backscattering spectroscopy combined with ion channeling analysis (RBS/C); and (2) cross-sectional transmission electron microscopy (XTEM). Upon irradiation to a fluence of 2×1O19 Xe/m2, the sample thickness penetrated by the implanted ions was observed to consist of three distinct layers: (1) a defect-free layer at the surface (thickness about 12 nm) exhibiting good crystallinity; (2) a second layer with a low density of relatively large- sized defects; and (3) a third layer consisting of a high concentration of small defects. After the fluence was increased to 7×1019 Xe/m2, a buried amorphous layer was visible by XTEM. The thickness of the amorphous layer was found to increase with increasing Xe ion fluence. The location of this buried amorphous layer was found to coincide with the measured peak in the Xe concentration (measured by RBS/C), rather than with the theoretical maXimum in the displacement damage profile. This observation suggests the implanted Xe ions may serve as nucleation sites for the amorphization transformation. The total thickness of the damaged microstructure due to ion irradiation was always found to be much greater than the projected range of the Xe ions. This is likely due to point defect migration under the high stresses induced by ion implantation.

Processing Simox Wafer Below the Critical Temperature

1987 ◽  
Vol 107 ◽  
Author(s):  
Piran Sioshansi ◽  
Fereydoon Namavar
Keyword(s):  
High Temperature ◽  
Critical Temperature ◽  
Ion Implantation ◽  
Solid Phase ◽  
Single Crystal Silicon ◽  
High Temperature Annealing ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation ◽  
Multiple Step

AbstractThe creation of SIMOX material by multiple step substoichiometry oxygen ion implantation of silicon wafers followed by high temperature annealing has already been demonstrated by different groups [1-4] This paper reports on the formation of SIMOX wafers at temperatures well below the critical temperature (500-550°C) specified for oxygen implantation of the SIMOX process. A multiple step procedure has been devised, each step consisting of oxygen ion implantation at doses of 2.5 and 3 x 1017 O+/cm2 followed by solid phase epitaxy at a temperature of 950°C for two hours. Non-destructive optical analysis and XTEM investigation of the wafers indicates the formation of a continuous buried oxide with good quality single crystal silicon on the surface after accumulated dose of 1.1x1018 O+/cm2 following high temperature annealing at 1300°C for six hours.The processing of SIMOX material at a lower temperature will enable the utilization of a wide variety of ion implanters, will simplify the design of the end station of the new generation high current ion implanters, and will have an impact on the availability and economics of SIMOX wafers.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

Solute Segregation and Dynamics of Solid-Phase Crystallization In in and Sb-Implanted Silicon

1981 ◽  
Vol 4 ◽  
Author(s):  
J. Narayan ◽  
G. L. Olson ◽  
O. W. Holland
Keyword(s):  
Laser Power ◽  
Solid Phase ◽  
Solute Segregation ◽  
Dislocation Loops ◽  
Solid Phase Crystallization ◽  
Time Resolved ◽  
Plan View ◽  
Ion Channeling ◽  
Retrograde Solubility ◽  
Transmission Electron

ABSTRACTTime-resolved-reflectivity measurements have been combined with transmission electron microscopy (cross-section and plan-view), Rutherford backscattering and ion channeling techniques to study the details of laser induced solid phase epitaxial growth in In+ and Sb+ implanted silicon in the temperature range from 725 to 1500 °K. The details of microstructures including the formation of polycrystals, precipitates, and dislocations have been correlated with the dynamics of crystallization. There were limits to the dopant concentrations which could be incorporated into substitutional lattice sites; these concentrations exceeded retrograde solubility limits by factors up to 70 in the case of the Si-In system. The coarsening of dislocation loops and the formation of a/2<110>, 90° dislocations in the underlying dislocation-loop bands are described as a function of laser power.

Flux Creep in Single Crystals of the High-Temperature Superconductor Y 1 Ba 2 Cu 3 O 7- x

1989 ◽  
Vol 8 (4) ◽  
pp. 369-373 ◽  
Author(s):  
D Hoffmeister ◽  
O Dobbert ◽  
K.-P Dinse ◽  
W Goldacker ◽  
T Wolf
Keyword(s):  
High Temperature ◽  
Single Crystals ◽  
High Temperature Superconductor ◽  
Flux Creep
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