Growth Rate Reduction of GaN Due to Ga Surface Accumulation

1996 ◽  
Vol 1 ◽  
Author(s):  
D.E. Crawford ◽  
R. Held ◽  
A. M. Johnston ◽  
A. M. Dabiran ◽  
Philip I. Cohen
Keyword(s):  
Growth Rate ◽  
Electron Diffraction ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Formation Rate ◽  
High Energy ◽  
High Energy Electron ◽  
Rate Reduction ◽  
Excess Surface ◽  
The Relationship

GaN(0001) has been grown on Al2O3 (0001) by molecular beam epitaxy where NH3 was used as the nitrogen precursor. Desorption mass spectroscopy and reflection high energy electron diffraction (RHEED) were used to monitor the relationship between growth rate and the incident fluxes during growth. Excess surface Ga decreases the GaN formation rate when the substrate temperature is too low or the Ga flux is too high. A simple rate equation is used to describe the observed behavior.

A RHEED Study of MBE Growth of ZnSe on GaAs (111) A-(2 × 2)

2003 ◽  
Vol 10 (04) ◽  
pp. 669-675
Author(s):  
F. S. Gard ◽  
J. D. Riley ◽  
R. Leckey ◽  
B. F. Usher
Keyword(s):  
Growth Rate ◽  
Electron Diffraction ◽  
Substrate Temperature ◽  
Three Dimensional ◽  
High Energy ◽  
Growth Mode ◽  
Two Dimensional ◽  
High Energy Electron ◽  
Mbe Growth ◽  
Atomic Flux

ZnSe epilayers have been grown under various Se/Zn atomic flux ratios in the range of 0.22–2.45 at a substrate temperature of 350°C on Zn pre-exposed GaAs (111) A surfaces. Real time reflection high energy electron diffraction (RHEED) observations have shown a transition from a two-dimensional (2D) to a three-dimensional (3D) growth mode. The transition time depends directly upon the growth rate. A detailed discussion is presented to explore the cause of this change in the growth mode.

Control of GaAs Domain Formation Via Monolayer and Multilayer Steps on Misoriented Si(100)

1987 ◽  
Vol 91 ◽  
Author(s):  
P.R. Pukite ◽  
P.I. Cohen
Keyword(s):  
Electron Diffraction ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
High Energy ◽  
Nucleation And Growth ◽  
Single Domain ◽  
Domain Formation ◽  
High Energy Electron ◽  
Strong Function ◽  
Step Transition

ABSTRACTReflection high energy electron diffraction (RHEED) measurements indicate that the adsorption of As on misoriented Si(100) surfaces drives a multilayer step transition. We find that the formation of multilayer steps is a strong function of substrate temperature and As pressure. Monolayer steps are metastable at low substrate temperature or As pressure. The subsequent nucleation and growth of GaAs by molecular beam epitaxy (MBE) is controlled by the initial Si step distribution. Single domain GaAs grown on the monolayer stepped substrate has Ga terminated steps. Conversely, single domain GaAs grown on the multilayer stepped substrate has As terminated steps.

Reflection High-Energy Electron Diffraction Study of Arsenic Incorporation in Metalorganic Molecular Beam Epitaxy of GaAs

1994 ◽  
Vol 340 ◽  
Author(s):  
H. K. Dong ◽  
S. C. H. Hung ◽  
C. W. Tu
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Flow Rate ◽  
Molecular Beam ◽  
High Energy ◽  
High Energy Electron ◽  
Group V ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Incorporation Ratio

ABSTRACTMetalorganic molecular beam epitaxy (MOMBE) of GaAs using triethylgallium (TEGa) and As4 has been studied by reflection high-energy electron diffraction (RHEED). The effect of varying the group-Ill flow rates and group-V beam flux on the growth rate has been investigated over a wide range of substrate temperatures. For a given arsenic flux, the GaAs growth rate first increases linearly as the TEGa flow rate increases. This linear relation extends up to a certain TEGa flow rate, where the growth rate reaches its maximum value. When the TEGa flow rate is increased above this critical value, the growth rate decreases and reaches a stabilized value. From a study of both group-Ill and group-V induced RHEED intensity oscillations, we find that the V/Ill incorporation ratio is unity at the transition point. Compared to conventional molecular beam epitaxy (MBE), MOMBE behaves differently when the V/Ill incorporation ratio is less than unity. The transition region between V/III>I and V/III<1 is gradual and no excess gallium accumulates on the surface during growth. The arseniccontrolled growth rate obtained from conventional group-V induced oscillations where excess Ga atoms are present is greater than the growth rate in the stabilization region where V/IIl<1.

Surface Of Li-Doped ZnSe Grown On Misoriented GaAs(001) Substrates

1996 ◽  
Vol 442 ◽  
Author(s):  
Minoru Yoneta ◽  
Masakazu Ohishi ◽  
Hiroshi Saito ◽  
Mitsuhiro Ohura ◽  
Katsumoto Fujii ◽  
...  
Keyword(s):  
Growth Rate ◽  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Photoluminescence Spectra ◽  
Step Density

AbstractThe surface of Li-doped ZnSe grown on misoriented GaAs(001) substrates by molecular beam epitaxy is studied by means of reflection high energy electron diffraction. Sharp and curved streaky RHEED patterns are observed for all the layers grown on the misoriented substrate towards [110], irrespective of off-angles. No curved pattern, however, is observed on ZnSe layers grown on misoriented GaAs(001) towards [110] with off-angle larger than 5°. We confirmed that the Li-array is surely formed along [110], and that the length of the Li-array is longer than 32Å to be observable as curved streaks. It is also confirmed that the growth rate of Li-doped ZnSe is proportional to the step density, and that the growth rate on the misoriented substrate towards [110] is higher than that on the misoriented substrate towards [110]. The photoluminescence spectra of Li-doped ZnSe layers grown on misoriented GaAs are reported.

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