Growth and Characterization of Piezoelectrically Enhanced Acceptor-Type AlGaN/GaN Heterostructures

Acceptor (Mg)-doped AlGaN/GaN heterostructures were grown via MOVPE and compared to similarly doped GaN standard films grown in the same reactor. Chemical analysis of the films, via secondary ion mass spectrometry (SIMS), revealed comparable Mg concentrations of ∼2×1019 atoms/cm3 in all films. The Mg-doped GaN standard sample had a sheet conductance of 7-μS compared to a sheet conductance of 20-μS for an AlGaN/GaN heterostructure. The sheet conductance of the AlGaN/GaN heterostructures was higher due to piezoelectric acceptor doping and modulation doping effects in addition to conventional Mg acceptor doping.

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Growth and Characterization of Piezoelectrically Enhanced Acceptor-Type AlGaN/GaN Heterostructures

MRS Proceedings ◽

10.1557/proc-595-f99w11.8 ◽

1999 ◽

Vol 595 ◽

Cited By ~ 1

Author(s):

A. Michel ◽

D. Hanser ◽

R.F. Davis ◽

D. Qiao ◽

S.S. Lau ◽

...

Keyword(s):

Secondary Ion Mass Spectrometry ◽

Standard Sample ◽

Acceptor Doping ◽

Modulation Doping ◽

Doping Effects ◽

Sheet Conductance ◽

Gan Heterostructure ◽

Secondary Ion ◽

Mg Doped

AbstractAcceptor (Mg)-doped AlGaN/GaN heterostructures were grown via MOVPE and compared to similarly doped GaN standard films grown in the same reactor. Chemical analysis of the films, via secondary ion mass spectrometry (SIMS), revealed comparable Mg concentrations of ∼2×1019 atoms/cm3 in all films. The Mg-doped GaN standard sample had a sheet conductance of 7-μS compared to a sheet conductance of 20-μS for an AlGaN/GaN heterostructure. The sheet conductance of the AlGaN/GaN heterostructures was higher due to piezoelectric acceptor doping and modulation doping effects in addition to conventional Mg acceptor doping.

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Detection of Au+ Ions During Fluorine Gas-Assisted Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS) for the Complete Elemental Characterization of Microbatteries

ACS Applied Materials & Interfaces ◽

10.1021/acsami.1c10352 ◽

2021 ◽

Vol 13 (34) ◽

pp. 41262-41274

Author(s):

Agnieszka Priebe ◽

Jordi Sastre ◽

Moritz H. Futscher ◽

Jakub Jurczyk ◽

Marcos V. Puydinger dos Santos ◽

...

Keyword(s):

Mass Spectrometry ◽

Secondary Ion Mass Spectrometry ◽

Time Of Flight ◽

Tof Sims ◽

Ion Mass Spectrometry ◽

Secondary Ion ◽

Elemental Characterization

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A Sims Study of Electroluminescent Phosphors: SrS:Cu

MRS Proceedings ◽

10.1557/proc-560-95 ◽

1999 ◽

Vol 560 ◽

Author(s):

Lily H. Zhang ◽

Larry Wang ◽

Wusheng Tong ◽

YongBao Xin

Keyword(s):

Material Characterization ◽

Secondary Ion Mass Spectrometry ◽

Dopant Concentration ◽

Thermal Quenching ◽

Areal Density ◽

Device Performance ◽

Cell Temperature ◽

Co Doping ◽

Doping Effects ◽

Secondary Ion

ABSTRACTThis study has used secondary ion mass spectrometry (SIMS) as a technique for thin film EL material characterization. It has shown that the Cu dopant concentration in the SrS films directly correlates with the luminescent brightness of the EL devices. A series of SrS:Cu,Y were grown using MBE to study the Y co-doping effects. It has been found that Y peak concentration and areal density in the SrS increased as the Y evaporation cell temperature was increased. The maximum PL intensity was found in the sample grown in the middle of the Y cell temperature range used. The Y co-doping has shown to reduce the thermal quenching effects in SrS EL devices. Therefore, in this series of samples, a good correlation has been found between Y and Cu concentration and the EL device performance characteristics.

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