Size Effect of Gold Nanoparticles on Optical and Electrical Properties of Au@TiO\(_2\) Nanocomposite Thin Films

This study focuses on the influence of gold nanoparticle sizes on optical and electrical properties of Au@TiO2 nanocomposite films. Here, the gold nanoparticles (AuNPs) of different sizes of 5 nm, 10 nm, 20 nm, 40 nm and 60 nm were dispersed onto nanoporous TiO2 thin films to form Au@TiO2 nanocomposite films. FE-SEM images and UV-vis absorption spectra show that AuNPs had good dispersion on the TiO2 films and all Au@TiO2 nanocomposite films exhibited a good surface plasmon resonance (SPR) with the resonance absorption peaks in the visible light region (about 550 nm). The effect of AuNPs on the films photoluminescence property was investigated using excited laser light of 325 nm wavelength at room temperature. The films electrical properties were studied from the change of the photocurrent under illumination of solar simulator and UV light source. The results show that the presence of gold nanoparticles has significantly improved the photocurrent of Au@TiO2 nanocomposite films and especially when AuNPs size was less than 20 nm. In addition, we also found that the photocurrent magnitude of the films with small AuNPs sizes (5 nm and 10 nm) under solar simulator light was 4 times larger than the one under UV light. These results indicate that AuNPs size had a great influence on the improvement of photocurrent in nanocomposite films.

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Effect of Precursor Concentration on Structural Optical and Electrical Properties of NiO Thin Films Prepared by Spray Pyrolysis

Journal of Nanomaterials ◽

10.1155/2017/5204639 ◽

2017 ◽

Vol 2017 ◽

pp. 1-10 ◽

Cited By ~ 11

Author(s):

Rafia Barir ◽

Boubaker Benhaoua ◽

Soufiane Benhamida ◽

Achour Rahal ◽

Toufik Sahraoui ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Spray Pyrolysis ◽

Sample Surface ◽

Precursor Concentration ◽

Spray Pyrolysis Method ◽

Nitrate Hexahydrate ◽

Optical And Electrical Properties ◽

Sem Images ◽

Nano Structure

Undoped nickel oxide (NiO) thin films were deposited on 500°C heated glass substrates using spray pyrolysis method at (0.015–0.1 M) range of precursor. The latter was obtained by decomposition of nickel nitrate hexahydrate in double distilled water. Effect of precursor concentration on structural, optical, and electrical properties of NiO thin films was investigated. X-ray diffraction (XRD) shows the formation of NiO under cubic structure with single diffraction peak along (111) plane at 2θ=37.24°. When precursor concentration reaches 0.1 M, an increment in NiO crystallite size over 37.04 nm was obtained indicating the product nano structure. SEM images reveal that beyond 0.04 M as precursor concentration the substrate becomes completely covered with NiO and thin films exhibit formation of nano agglomerations at the top of the sample surface. Ni-O bonds vibrations modes in the product of films were confirmed by FT-IR analysis. Transparency of the films ranged from 57 to 88% and band gap energy of the films decreases from 3.68 to 3.60 eV with increasing precursor concentration. Electrical properties of the elaborated NiO thin films were correlated to the precursor concentration.

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Investigation of the Structural, Optical and Electrical Properties of AgInSe2 Thin Films

Ibn AL- Haitham Journal For Pure and Applied Science ◽

10.30526/31.1.1848 ◽

2018 ◽

Vol 31 (1) ◽

pp. 37 ◽

Cited By ~ 2

Author(s):

Iman Hameed Khudayer ◽

Bushra Hashem Hussein Ali ◽

Mohammed Hamid Mustafa ◽

Ayser Jumah Ibrahim

Keyword(s):

Thin Films ◽

Surface Roughness ◽

Grain Size ◽

Electrical Properties ◽

Room Temperature ◽

Annealing Temperature ◽

Optical And Electrical Properties ◽

X Ray ◽

20 Nm

The Silver1Indium1Selenide (AgInSe2) (AIS) thin1films of (3001±20) nm thickness have been1prepared2from the compound alloys2using thermal evaporation2 technique onto the glass2substrate at room temperature, with a deposition rate2(3±0.1) nm2sec-1. The2structural, optical and electrical3properties have been studied3at different annealing3temperatures (Ta=450, 550 and 650) K. The amount3or (concentration) of the elements3(Ag, In, Se) in the prepared alloy3was verified using an energy dispersive3x-ray spectrometer (EDS)3technology. X-ray diffraction3analysis shows that AIS alloy prepared as (powder) and the thin films3are polycrystalline of tetragonal3structure with preferential orientation3(112). The crystalline3size increases as a function3of annealing temperature. The atomic force3microscope (AFM) technique was used to examine3the topography and estimate3the surface roughness, also the average grain3size of the films. The results show3that the grain size increases3with annealing3temperature. The optical4band gap of the films lies4in the range 1.6-1.9 eV. The films4appear to be4n-type indicating that the electrons4as a dominant charge4carrier. The electrical conductivity4increases with a corresponding4increase in annealing4temperature.

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Film thickness effect on structural, optical and electrical properties of indium oxide (In2O3) thin films grown via sol-gel method

Main Group Chemistry ◽

10.3233/mgc-210063 ◽

2021 ◽

pp. 1-15

Author(s):

R. Nouadji ◽

A. Attaf ◽

A. Derbali ◽

A. Bouhdjer ◽

H. Saidi ◽

...

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Film Thickness ◽

Substrate Surface ◽

Sol Gel ◽

Thickness Effect ◽

Visible Range ◽

Optical And Electrical Properties ◽

Sem Images ◽

X Ray

In this work, we investigated the effect of the thickness on structural, morphological, optical, and electrical properties of In2O3 thin films synthesized via by sol–gel spin coating technique. The prepared samples were characterized by various techniques including X-ray diffraction (XRD), scanning electron microscope (SEM), energy-dispersive X-ray (EDX) spectra, UV-Vis-NIR spectrophotometer as well as the electrical measurements via the four-probe technique. The XRD analysis reveals that the films have a cubic crystalline structure, with (222) preferential orientation. The crystallite size values of the films were varied from 14 to 27 nm. The (SEM) images indicated that the homogenous and smooth surface with better adherent to the substrate surface. The EDX spectrum reveals the presence of In and O element necessary for In2O3 films for film formation. Excess of oxygen is observed due to the substrate contribution. The transmittance results exhibit that the films are highly transparent, more than 75% in the visible range from 400 nm to 800 nm is measured. The estimated band gap energy is found to increase with increasing film thickness (3.37–3.7 eV). The electrical resistivity of the In2O3 thin films substantially decreases with the increasing film thickness from 1.48×10 - 4 to 1.3×10 - 3 Ω.cm.

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Effect of Gamma Radiation on Structural, Optical and Electrical Properties of nanostructured CdHgTe Thin Films

Nanoscale Reports ◽

10.26524/nr1815 ◽

2018 ◽

Vol 1 (1) ◽

pp. 26-31 ◽

Cited By ~ 1

Author(s):

B Babu ◽

K Mohanraj ◽

S Chandrasekar ◽

N Senthil Kumar ◽

B Mohanbabu

Keyword(s):

Thin Films ◽

Electrical Conductivity ◽

Electrical Properties ◽

Gamma Radiation ◽

Glass Substrate ◽

Gamma Ray ◽

Optical And Electrical Properties ◽

Deposition Technique ◽

Polycrystalline Structure ◽

Dc Electrical Conductivity

CdHgTe thin films were grown onto glass substrate via the Chemical bath deposition technique. XRD results indicate that a CdHgTe formed with a cubic polycrystalline structure. The crystallinity of CdHgTe thin films is gradually deteriorate with increasing the gamma irradiation. EDS spectrums confirms the presence of Cd, Hg and Te elements. DC electrical conductivity results depicted the conductivity of CdHgTe increase with increasing a gamma ray dosage

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Enhancing Optical and Electrical Properties of La- and Al-Codoped ZnO Thin Films Prepared by Sol-Gel Method -La Codoping Effect

Recent Patents on Nanotechnology ◽

10.2174/1872210510666160929115302 ◽

2017 ◽

Vol 11 (2) ◽

Author(s):

Hai -Yan He

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Sol Gel ◽

Zno Thin Films ◽

Optical And Electrical Properties ◽

Gel Method ◽

Sol Gel Method

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Structural, Optical and Electrical Properties of Al+MoO3 and Au+MoO3 Thin Films Prepared by Magnetron Codeposition

Materials ◽

10.3390/ma14040766 ◽

2021 ◽

Vol 14 (4) ◽

pp. 766

Author(s):

Tihomir Car ◽

Ivan Jakovac ◽

Ivana Šarić ◽

Sigrid Bernstorff ◽

Maja Micetic

Keyword(s):

Thin Films ◽

Electrical Properties ◽

Au Nanoparticle ◽

Content Increase ◽

Optical And Electrical Properties ◽

Volume Percentage ◽

Sputtering Deposition ◽

Nanoparticle Formation ◽

Al Content ◽

Sputtering Power

Structural, optical and electrical properties of Al+MoO3 and Au+MoO3 thin films prepared by simultaneous magnetron sputtering deposition were investigated. The influence of MoO3 sputtering power on the Al and Au nanoparticle formation and spatial distribution was explored. We demonstrated the formation of spatially arranged Au nanoparticles in the MoO3 matrix, while Al incorporates in the MoO3 matrix without nanoparticle formation. The dependence of the Au nanoparticle size and arrangement on the MoO3 sputtering power was established. The Al-based films show a decrease of overall absorption with an Al content increase, while the Au-based films have the opposite trend. The transport properties of the investigated films also are completely different. The resistivity of the Al-based films increases with the Al content, while it decreases with the Au content increase. The reason is a different transport mechanism that occurs in the films due to their different structural properties. The choice of the incorporated material (Al or Au) and its volume percentage in the MoO3 matrix enables the design of materials with desirable optical and electrical characteristics for a variety of applications.

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