Low-Power Circuit Applicability of Hetero-Gate-Dielectric Tunneling Field-Effect Transistors (HG TFETs)

2012 ◽  
Vol E95.C (5) ◽  
pp. 910-913 ◽  
Author(s):  
Gibong LEE ◽  
Woo Young CHOI
Keyword(s):  
Low Power ◽  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Power Circuit ◽  
Tunneling Field Effect Transistors

Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT

Nanoscale ◽  
2015 ◽  
Vol 7 (19) ◽  
pp. 8695-8700 ◽  
Author(s):  
Changjian Zhou ◽  
Xinsheng Wang ◽  
Salahuddin Raju ◽  
Ziyuan Lin ◽  
Daniel Villaroman ◽  
...  
Keyword(s):  
Low Power ◽  
Field Effect ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Power Device ◽  
Enhancement Mode ◽  
High K ◽  
High K Gate Dielectric

Ultra high-k dielectric enables low-voltage enhancement-mode MoS2 transistor with high ON/OFF ratio, leading to low-power device.

scholarly journals Dirac-Source Diode with Sub-unity Ideality Factor

2021 ◽  
Author(s):  
Gyuho Myeong ◽  
Wongil Shin ◽  
Seungho Kim ◽  
Hongsik Lim ◽  
Boram Kim ◽  
...  
Keyword(s):  
Low Power ◽  
Ideality Factor ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Characteristic Curve ◽  
Drain Current ◽  
Power Circuit ◽  
Power Transistors ◽  
Power Electronic Circuits ◽  
Power Diode

Abstract An increase in power consumption necessitates a low-power circuit technology to extend Moore’s law. Low-power transistors, such as tunnel field-effect transistors (TFETs)1-5, negative-capacitance field-effect transistors (NC-FETs)6, and Dirac-source field-effect transistors (DS-FETs)7-10, have been realised to break the thermionic limit of the subthreshold swing (SS). However, a low-power diode rectifier, which breaks the thermionic limit of an ideality factor (η) of 1 at room temperature, has not been proposed yet. In this study, we have realised a DS diode, which exhibits a steep-slope characteristic curve, by utilising the linear density of states (DOSs) of graphene7. For the developed DS diode, η < 1 for more than two decades of drain current with a minimum value of 0.8, and the rectifying ratio is large (> 105). The realisation of a DS diode paves the way for the development of low-power electronic circuits.

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