scholarly journals CURRENT-VOLTAGE CURVES FOR TREATING EFFLUENT CONTAINING HEDP: DETERMINATION OF THE LIMITING CURRENT

2015 ◽  
Vol 32 (4) ◽  
pp. 831-836 ◽  
Author(s):  
T. Scarazzato ◽  
D. C. Buzzi ◽  
A. M Bernardes ◽  
J. A. S. Tenório ◽  
D. C. R. Espinosa
Solar RRL ◽  
2021 ◽  
Author(s):  
Anh Dinh Bui ◽  
Md Arafat Mahmud ◽  
Naeimeh Mozaffari ◽  
Rabin Basnet ◽  
The Duong ◽  
...  

1948 ◽  
Vol 26b (12) ◽  
pp. 767-772
Author(s):  
Paul A. Giguère ◽  
J. B. Jaillet

The determination of hydrogen peroxide at concentrations higher than those normally covered in polarography was studied with various electrodes. The diffusion current was found to increase linearly with the peroxide concentration up to 0.15% with the dropping mercury electrode and up to nearly 1% with a fixed platinum microelectrode. Under these conditions the limiting current was about 10 times greater than that usually observed. Although the solutions were supersaturated with oxygen, traces of strychnine sulphate were sufficient to suppress all maxima.


2004 ◽  
Vol 27 (2) ◽  
pp. 61-67
Author(s):  
S. Dib ◽  
C. Salame ◽  
N. Toufik ◽  
A. Khoury ◽  
F. Pélanchon ◽  
...  

A new method for the extraction of junction parameters from a description of the current–voltage characteristic is developed. A simulation is performed and a high accuracy is obtained for the determination of the singleexponential model parameters. The method is easy to implement in a control process for device characterization. An application, achieved to observe the degradation of the emitter–base junction of a bipolar transistor during an aging experiment, shows that the evolutions of the single exponential model parameters versus time introduce a means for degradation quantification.


2000 ◽  
Vol 22 (3) ◽  
pp. 157-163 ◽  
Author(s):  
S. Dib ◽  
M. De La Bardonnie ◽  
A. Khoury ◽  
F. Pelanchon ◽  
P. Mialhe

A new method for extracting junction parameters of the single diode model is presented. A least squares method approach considers the deviation ∆V=f(I) between the experimental current-voltage (I-V) characteristic and a theoretical arbitrary characteristic. A specific case- the ∆V graph reducing to a straight line–is identified and the knowledge of the slope and of the intercept with the ordinate axis leads to the determination of the junction parameters. The method is applied to the characterization of the emitter-base junction of transistors and the results are discussed.


Photonics ◽  
2021 ◽  
Vol 8 (10) ◽  
pp. 412
Author(s):  
Takaho Asai ◽  
Seigo Ito ◽  
Takayuki Makino

We applied room-temperature photoluminescence (PL) spectroscopy for the compositional engineering of a CH3NH3Pb(Cl,I)3 light harvester in an alloy-based perovskite solar cell. This spectroscopic characterization determines the optimal Cl concentration where the power conversion efficiency shows its maximum in a contactless and non-destructive manner. The PL quenching ratio evaluated from the comparative PL studies between the films grown on glass/ZrO2 and SnO2:F/TiO2 substrates exhibited its maximum at a Cl concentration of 10 mol%, which agrees with the Cl concentration determined from the current–voltage measurement-based device performance. We also discuss the possible reasons for the coincidence mentioned above regarding the charge extraction effect induced by Cl incorporation.


2014 ◽  
Vol 13 (01) ◽  
pp. 1450003 ◽  
Author(s):  
ALEXEY V. KLYUEV ◽  
EVGENY I. SHMELEV ◽  
ARKADY V. YAKIMOV

A model of Schottky diode with δ-doping is suggested. The aim is the determination of technological areas of the diode, which are responsible for the 1/f noise. Series resistance of base and contacts, and the possible leakage are taken into account. Equivalent parameters of the diode are defined from the analysis of the current–voltage characteristic. The model of fluctuations in the charge of non-compensated donors in δ-layer of Schottky junction (ΔNs – model) and model of 1/f noise in leakage current are suggested for an explanation of experimental data. Our study show that, in the investigated diodes, in a million atomic impurities, there are about 1–10 special impurity atoms with stochastically modulated ionization energy.


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