scholarly journals Superconductivity in Group III-V Semiconductor AlN Under High Pressure

2015 ◽  
Vol 7 (3) ◽  
Author(s):  
G. Selva Dancy ◽  
V. Benaline Sheeba ◽  
C. Nirmala Louis ◽  
A. Amalraj
Keyword(s):  
High Pressure ◽  
Group Iii ◽  
Group Iii V Semiconductor

Doping Effects of Group-III and -V Element on a-Si Prepared by High Pressure rf Sputtering

1980 ◽  
Vol 19 (S2) ◽  
pp. 85 ◽  
Author(s):  
Masakuni Suzuki ◽  
Akira Nakao ◽  
Toshikazu Maekawa ◽  
Minoru Kumeda ◽  
Tatsuo Shimizu
Keyword(s):  
High Pressure ◽  
Rf Sputtering ◽  
Group Iii ◽  
Doping Effects

Electron Scattering in Buried InGaAs MOSFET Channel with HfO2 Gate Oxide

2009 ◽  
Vol 1155 ◽  
Author(s):  
Serge Oktyabrsky ◽  
Padmaja Nagaiah ◽  
Vadim Tokranov ◽  
Sergei Koveshnikov ◽  
Michael Yakimov ◽  
...  
Keyword(s):  
High Mobility ◽  
Gate Oxide ◽  
Cmos Technology ◽  
Interface Layer ◽  
Oxide Interface ◽  
Channel Mobility ◽  
Group Iii ◽  
High K ◽  
Electron Transport Properties ◽  
Group Iii V Semiconductor

AbstractGroup III-V semiconductor materials are being studied as potential replacements for conventional CMOS technology due to their better electron transport properties. However, the excess scattering of carriers in MOSFET channel due to high-k gate oxide interface significantly depreciates the benefits of III-V high-mobility channel materials. We present results on Hall electron mobility of buried QW structures influenced by remote scattering due to InGaAs/HfO2 interface. Mobility in In0.77Ga0.23As QWs degraded from 12000 to 1200 cm2/V-s and the mobility vs. temperature slope changed from T-1.2 to almost T+1.0 in 77-300 K range when the barrier thickness is reduced from 50 to 0 nm. This mobility change is attributed to remote Coulomb scattering due to charges and dipoles at semiconductor/oxide interface. Elimination of the InGaAs/HfO2 interface via introduction of SiOx interface layer formed by oxidation of thin a-Si passivation layer was found to improve the channel mobility. The mobility vs. sheet carrier density shows the maximum close to 2×1012 cm-2.

scholarly journals Synthesis and characterization of group III-V semiconductor clusters: gallium phosphide GaP in zeolite Y

1989 ◽  
Vol 111 (20) ◽  
pp. 8006-8007 ◽  
Author(s):  
J. E. Mac Dougall ◽  
H. Eckert ◽  
G. D. Stucky ◽  
N. Herron ◽  
Y. Wang ◽  
...  
Keyword(s):  
Gallium Phosphide ◽  
Zeolite Y ◽  
Synthesis And Characterization ◽  
Group Iii ◽  
Semiconductor Clusters ◽  
Group Iii V Semiconductor

Structural and Optical Characterization of Light Emitting InGaN/GaN Epitaxial Layers

2006 ◽  
Vol 514-516 ◽  
pp. 38-42 ◽  
Author(s):  
Sergio Pereira ◽  
M.R. Correia ◽  
Eduardo Alves
Keyword(s):  
Optical Characterization ◽  
Material System ◽  
Structural And Optical Properties ◽  
Light Emitting ◽  
Group Iii ◽  
Composition Determination ◽  
Basic Understanding ◽  
Semiconductor Alloy ◽  
Group Iii V Semiconductor

This paper concerns the structural and optical properties of the group III-V semiconductor alloy, indium gallium nitride (InGaN). We focus on the reasons of interest to study InGaN. Recent advances regarding the basic understanding (ex. accurate composition determination) and some yet unclear issues (ex. phase separation) regarding this material system, are also briefly discussed. Illustrative results on the light emitting and structural properties are presented.

scholarly journals Properties of group III–V semiconductor: BAs

2019 ◽  
Vol 42 (3) ◽  
Author(s):  
Anugya Rastogi ◽  
Priyanka Rajpoot ◽  
U P Verma
Keyword(s):  
Group Iii ◽  
Group Iii V Semiconductor
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