Properties of group III–V semiconductor: BAs

AbstractGroup III-V semiconductor materials are being studied as potential replacements for conventional CMOS technology due to their better electron transport properties. However, the excess scattering of carriers in MOSFET channel due to high-k gate oxide interface significantly depreciates the benefits of III-V high-mobility channel materials. We present results on Hall electron mobility of buried QW structures influenced by remote scattering due to InGaAs/HfO2 interface. Mobility in In0.77Ga0.23As QWs degraded from 12000 to 1200 cm2/V-s and the mobility vs. temperature slope changed from T-1.2 to almost T+1.0 in 77-300 K range when the barrier thickness is reduced from 50 to 0 nm. This mobility change is attributed to remote Coulomb scattering due to charges and dipoles at semiconductor/oxide interface. Elimination of the InGaAs/HfO2 interface via introduction of SiOx interface layer formed by oxidation of thin a-Si passivation layer was found to improve the channel mobility. The mobility vs. sheet carrier density shows the maximum close to 2×1012 cm-2.

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Synthesis and characterization of group III-V semiconductor clusters: gallium phosphide GaP in zeolite Y

Journal of the American Chemical Society ◽

10.1021/ja00202a047 ◽

1989 ◽

Vol 111 (20) ◽

pp. 8006-8007 ◽

Cited By ~ 67

Author(s):

J. E. Mac Dougall ◽

H. Eckert ◽

G. D. Stucky ◽

N. Herron ◽

Y. Wang ◽

...

Keyword(s):

Gallium Phosphide ◽

Zeolite Y ◽

Synthesis And Characterization ◽

Group Iii ◽

Semiconductor Clusters ◽

Group Iii V Semiconductor

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An Empirical Potential Approach to Wurtzite-Zinc-Blende Polytypism in Group III-V Semiconductor Nanowires

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.l275 ◽

2006 ◽

Vol 45 (No. 9) ◽

pp. L275-L278 ◽

Cited By ~ 156

Author(s):

Toru Akiyama ◽

Kosuke Sano ◽

Kohji Nakamura ◽

Tomonori Ito

Keyword(s):

Semiconductor Nanowires ◽

Potential Approach ◽

Group Iii ◽

Empirical Potential ◽

Zinc Blende ◽

Group Iii V Semiconductor

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Structural and Optical Characterization of Light Emitting InGaN/GaN Epitaxial Layers

Materials Science Forum ◽

10.4028/www.scientific.net/msf.514-516.38 ◽

2006 ◽

Vol 514-516 ◽

pp. 38-42 ◽

Cited By ~ 3

Author(s):

Sergio Pereira ◽

M.R. Correia ◽

Eduardo Alves

Keyword(s):

Optical Characterization ◽

Material System ◽

Structural And Optical Properties ◽

Light Emitting ◽

Group Iii ◽

Composition Determination ◽

Basic Understanding ◽

Semiconductor Alloy ◽

Group Iii V Semiconductor

This paper concerns the structural and optical properties of the group III-V semiconductor alloy, indium gallium nitride (InGaN). We focus on the reasons of interest to study InGaN. Recent advances regarding the basic understanding (ex. accurate composition determination) and some yet unclear issues (ex. phase separation) regarding this material system, are also briefly discussed. Illustrative results on the light emitting and structural properties are presented.

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