scholarly journals Synthesis and optimization of properties of thin films of FAx(MA1-X)PbI3grown by spin coating with perovskite structure to be used as active layer in hybrid solar cells

2020 ◽  
Vol 19 (1) ◽  
pp. 87-93
Author(s):  
Gerardo Gordillo-Guzmán ◽  
Ophyr Virgüez-Amaya ◽  
Camilo Otálora-Bastidas ◽  
Clara Calderón-Triana ◽  
César Quiñones-Segura
Keyword(s):  
Solar Cells ◽  
Active Layer ◽  
Spin Coating ◽  
Morphological Properties ◽  
Hybrid Solar Cells ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
One Step

This work report results concerning the effect that the substitution of the methylammonium cation by the formamidinium cation causes on the properties of FAx(MA1-x)PbI3films synthesized by spin coating in one step. For that, it was conducted a study to establish the influence of the composition of the FAx(MA1-x)PbI3films on their optical, structural and morphological properties, determined through spectral transmittance, atomic force microscopy and X-ray diffraction measurements. Correlating parameters of synthesis with results of the study of properties performed, we were able to get conditions to grow FAx(MA1-x)PbI3films with improved optical gap, microstructure and morphology, what allows to think that this compound is suitable to be used as the active layer in hybrid solar cells.

Fabrication of GaN Doped ZnO Nanocrystallines by Laser Ablation

2008 ◽  
Vol 8 (8) ◽  
pp. 4168-4171
Author(s):  
N. Gopalakrishnan ◽  
B. C. Shin ◽  
K. P. Bhuvana ◽  
J. Elanchezhiyan ◽  
T. Balasubramanian
Keyword(s):  
Deep Level ◽  
Morphological Properties ◽  
X Ray Diffraction ◽  
Ceramic Method ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Doped Zno ◽  
Krf Excimer Laser ◽  
Photoluminescence Studies

Here, we present the fabrication of pure and GaN doped ZnO nanocrystallines on Si(111) substrates by KrF excimer laser. The targets for the ablation have been prepared by conventional ceramic method. The fabricated nanocrystallines have been investigated by X-ray diffraction, photoluminescence and atomic force microscopy. The X-ray diffraction analysis shows that the crystalline size of pure ZnO is 36 nmand it is 41 nmwhile doped with 0.8 mol% of GaN due to best stoichiometry between Zn and O. Photoluminescence studies reveal that intense deep level emissions have been observed for pure ZnO and it has been suppressed for the GaN doped ZnO structures. The images of atomic force microscope show that the rms surface roughness is 27 nm for pure ZnO and the morphology is improved with decrease in rms roughness, 18 nm with fine crystallines while doped with 1 mol% GaN. The improved structural, optical and morphological properties of ZnO nanocrystalline due to GaN dopant have been discussed in detail.

scholarly journals PREPARATION AND CHARACTERIZATION OF CDO-NIO NANOCOMPOSITES USING LASER PULSE DEPOSITION APPROACH

2021 ◽  
Vol 03 (03) ◽  
pp. 01-09
Author(s):  
Khamees D. MAHMOOD ◽  
Kadhim A. AADIM ◽  
Mohammed G. HAMMED
Keyword(s):  
Laser Pulse ◽  
Morphological Properties ◽  
X Ray Diffraction ◽  
Energy Band Gap ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Pulse Deposition ◽  
Deposited Films

In this manuscript, CdO-NiO nanocomposites (in the form of thin film) with particular concentrations are paper using laser pulse deposition technique under the effect of different laser energies (300, 400, 500, and 600 mJ). Furthermore, the structural, morphological, and optical analyses are thoroughly investigated. In particular, well-oriented deposited films are observed by using X-ray diffraction technique, while the morphological properties are investigated using two different techniques namely field emission scanning electron microscopy and atomic force microscopy which have revealed small nanoparticles with approximate diameter of 50 nm and average surface roughness ranging between 6.5 and 20.3 nm for laser energies of 400 and 600 mJ, respectively. Continuously, the optical technique applied which used UV-Vis analysis has showed cut-off phenomenon at around 339 nm. In the meanwhile, the energy band gap for the deposited films was found to be within the range of 2.2 and 2.4 eV, as a result of different laser energies.

Spin Coating Effect on Structural and Morphological Properties for CdS/Glass Nanostructures

2014 ◽  
Vol 925 ◽  
pp. 175-179
Author(s):  
Y. Al-Douri
Keyword(s):  
Spin Coating ◽  
Sol Gel ◽  
Theoretical Data ◽  
Morphological Properties ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Interplaner Distance ◽  
Coating Method ◽  
Good Agreement

CdS/glass nanostructures are prepared at 400 °C by sol-gel spin coating method without catalyst. These nanostructures have been characterized by analyzed using X-ray diffraction (XRD) and atomic force microscopy (AFM). The grin size, full width half maxima, miller indices, strain, dislocation density, lattice constant and interplaner distance are measured. The measured and calculated results showed a good agreement with other experimental and theoretical data.

scholarly journals PREPARATION AND CHARACTERIZATION OF IRON SULPHIDE THIN FILMS BY CHEMICAL BATH DEPOSITION METHOD

2010 ◽  
Vol 10 (1) ◽  
pp. 8-11 ◽  
Author(s):  
Anuar Kassim ◽  
Tan WeeTee ◽  
Dzulkefly Kuang Abdullah ◽  
Atan Mohd. Sharif ◽  
Ho SoonMin ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Band Gap ◽  
Chemical Bath Deposition ◽  
Substrate Surface ◽  
Morphological Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force

FeS2 thin films have been deposited by using low cost chemical bath deposition technique. The films obtained under deposition parameters such as bath temperature (90 °C), deposition period (90 min), electrolyte concentration (0.15 M) and pH of the reactive mixture (pH 2.5). The thin films were characterized using X-ray diffraction and atomic force microscopy in order to study the structural and morphological properties. The band gap energy, transition type and absorption properties were determined using UV-Vis Spectrophotometer. X-ray diffraction displayed a pattern consistent with the formation of an orthorhombic structure, with a strong (110) preferred orientation. Atomic force microscopy image showed the substrate surface is well covered with irregular grains. A direct band gap of 1.85 eV was obtained according to optical absorption studies.   Keywords: Iron sulfide, X-ray diffraction, chemical bath deposition, thin films

scholarly journals One Step Mechanosynthesis of Graphene Oxide Directly from Graphite

2019 ◽  
Author(s):  
Victor Ibarra ◽  
Demetrio Mendoza ◽  
Alma Sanchez ◽  
Rosa Vazquez ◽  
Karina Aleman ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Thermogravimetric Analysis ◽  
Spectroscopic Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
One Step ◽  
Ft Ir ◽  
Scanning Electron

Graphene oxide was synthesized by a one-step environmentally friendly mechanochemistry process directly from graphite and characterized by Raman, FT-IR and UV/vis spectroscopies, Atomic Force Microscopy, X-ray Diffraction, Scanning Electron Microscopy, Energy-Dispersive X-ray Spectroscopy and Thermogravimetric Analysis. Spectroscopic analysis shows that the functional groups and oxygen content of the synthesized material are comparable with those of graphene oxide synthesized by other previously reported methods (Hummers). Thermogravimetric analysis reveals thermal stability up to 400 °C.

Effects of CuIn0,5Ga0,5Se2 growth by isothermal and bithermal Cu-Poor/Rich/Poor sequence on solar cells properties

2009 ◽  
Vol 1165 ◽  
Author(s):  
Hakim Marko ◽  
Adam Hultqvist ◽  
Charlotte Platzer-Björkman ◽  
Sébastien Noël ◽  
John Kessler
Keyword(s):  
Solar Cells ◽  
Buffer Layer ◽  
Atomic Layer ◽  
Buffer Layers ◽  
X Ray Diffraction ◽  
Crystallographic Preferred Orientation ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Layer I

AbstractCo-evaporated CuIn0,5Ga0,5Se2 thin film solar cells were grown using a sequential Cu-Poor/Rich/Poor process (CUPRO). During the growth process, the substrate temperature was either kept constant at 570 °C (iso-CUPRO) or decreased during the first step to either 360 or 430 or 500 °C (bi-CUPRO). According to atomic force microscopy (AFM) measurements, the lower the temperature is in the first step the smoother the final CIGS surface becomes. By decreasing the first step temperature, cross-section scanning electron microscopy (SEM) and θ-2θ x-ray diffraction (XRD) do not reveal clearly any important changes of morphology and crystallographic preferred orientation. SLG/Mo/CIGS/Buffer layer/i-ZnO/ZnO:Al/grid(Ni/Al/Ni) solar cells with either a chemical bath deposited CdS or an atomic layer deposited Zn(O,S) buffer layer were fabricated. For both buffer layers, the bi-CUPRO processes lead to higher efficiencies. Besides, using Zn(O,S), the electronic collection was improved for the infrared spectrum as well as for the ultraviolet spectrum. This resulted in efficiencies close to 14,5% for the Zn(O,S) cells.

Investigation of the Effect of Uv-Assisted Oxidation and Nitridation of Hafnium Metal Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C. Essary ◽  
V. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Uv Radiation ◽  
Photoelectron Spectroscopy ◽  
Grazing Angle ◽  
X Ray Diffraction ◽  
Metal Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Silicon Interface

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.

Low Molecular Weight Microfibers with Light Sensing Properties

2017 ◽  
Vol 54 (4) ◽  
pp. 655-658
Author(s):  
Andrei Bejan ◽  
Dragos Peptanariu ◽  
Bogdan Chiricuta ◽  
Elena Bicu ◽  
Dalila Belei
Keyword(s):  
Molecular Weight ◽  
Low Molecular Weight ◽  
X Ray Diffraction ◽  
Aromatic Rings ◽  
X Ray ◽  
Force Microscopy ◽  
Light Sensing ◽  
Sensing Applications ◽  
Atomic Force ◽  
Low Molecular Weight Compounds

Microfibers were obtained from organic low molecular weight compounds based on heteroaromatic and aromatic rings connected by aliphatic spacers. The obtaining of microfibers was proved by scanning electron microscopy. The deciphering of the mechanism of microfiber formation has been elucidated by X-ray diffraction, infrared spectroscopy, and atomic force microscopy measurements. By exciting with light of different wavelength, florescence microscopy revealed a specific optical response, recommending these materials for light sensing applications.

Nanocrystalline Solutions as Precursors to The Spray Deposition of Cdte Thin Films

1995 ◽  
Vol 382 ◽  
Author(s):  
Martin Pehnt ◽  
Douglas L. Schulz ◽  
Calvin J. Curtis ◽  
Helio R. Moutinho ◽  
Amy Swartzlander ◽  
...  
Keyword(s):  
Thin Films ◽  
Atomic Force Microscopy ◽  
Grain Size ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Cdte Nanoparticles ◽  
Atomic Force ◽  
Vis Spectroscopy ◽  
Cdte Thin Films

ABSTRACTIn this article we report the first nanoparticle-derived route to smooth, dense, phase-pure CdTe thin films. Capped CdTe nanoparticles were prepared by injection of a mixture of Cd(CH3)2, (n-C8H17)3 PTe and (n-C8H17)3P into (n-C8H17)3PO at elevated temperatures. The resultant nanoparticles 32-45 Å in diameter were characterized by x-ray diffraction, UV-Vis spectroscopy, transmission electron microscopy, thermogravimetric analysis and energy dispersive x-ray spectroscopy. CdTe thin film deposition was accomplished by dissolving CdTe nanoparticles in butanol and then spraying the solution onto SnO2-coated glass substrates at variable susceptor temperatures. Smooth and dense CdTe thin films were obtained using growth temperatures approximately 200 °C less than conventional spray pyrolysis approaches. CdTe films were characterized by x-ray diffraction, UV-Vis spectroscopy, atomic force microscopy, and Auger electron spectroscopy. An increase in crystallinity and average grain size as determined by x-ray diffraction was noted as growth temperature was increased from 240 to 300 °C. This temperature dependence of film grain size was further confirmed by atomic force microscopy with no remnant nanocrystalline morphological features detected. UV-Vis characterization of the CdTe thin films revealed a gradual decrease of the band gap (i.e., elimination of nanocrystalline CdTe phase) as the growth temperature was increased with bulk CdTe optical properties observed for films grown at 300 °C.

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