scholarly journals Investigation of repeated economiser tube failures of a 135 tph cold cyclone CFB boiler – a case study

2021 ◽  
Vol 71 (5&6) ◽  
pp. 73
Author(s):  
Chittatosh Bhattacharya
Keyword(s):  
Failure Analysis ◽  
Coal Ash ◽  
Fluidised Bed ◽  
Cfb Boiler ◽  
Failure Investigation ◽  
Short Span ◽  
Operational Practices ◽  
External Corrosion ◽  
Circulating Fluidised Bed

There were quick and successive failures of economiser tubes in a four years old cold cyclone circulating fluidised bed 135 tph boiler in a short span of three months. Advance inspection and failure analysis, change in operational practices were used to get the boiler running at full load at the earliest possible time. This paper presents details of the process of inspection, maintenance, operation and failure investigation carried out for the economiser tubes of the boiler. The failure of the economiser tubes was due to external corrosion of the tubes furnace fire side due to presence of sulphur in coal, accompanied by localised erosion by high levels of alpha-quartz in coal ash.

Field Testing of Acoustic Cleaning System Working in 670Mwth CFB Boiler

2013 ◽  
Vol 34 (2) ◽  
pp. 283-291 ◽  
Author(s):  
Paweł Mirek
Keyword(s):  
Spectral Analysis ◽  
Acoustic Waves ◽  
Acoustic Pressure ◽  
Field Testing ◽  
Fluidised Bed ◽  
Cfb Boiler ◽  
Cleaning System ◽  
Circulating Fluidised Bed

The article reports the results of measurements of the acoustic pressure of acoustic waves generated by acoustic dust cleaners mounted in the convection pass of the 670MWth Circulating Fluidised Bed boiler. Based on measurements carried out and the spectral analysis of recorded signals it was found that the level of acoustic pressure generated by acoustic cleaners for the frequency of 100 Hz was too low for the efficient cleaning of the heated surfaces of the reheater RH2 and superheater SH3.

Bed-To-Wall Heat Transfer in a Supercritical Circulating Fluidised Bed Boiler

2014 ◽  
Vol 35 (2) ◽  
pp. 191-204 ◽  
Author(s):  
Artur Błaszczuk ◽  
Wojciech Nowak ◽  
Szymon Jagodzik
Keyword(s):  
Heat Transfer ◽  
Heat Transfer Coefficient ◽  
Transfer Coefficient ◽  
Pressure Measurements ◽  
Fluidised Bed ◽  
Cfb Boiler ◽  
Suspension Density ◽  
Bed Temperature ◽  
Circulating Fluidised Bed ◽  
The Heat Transfer Coefficient

Abstract The purpose of this work is to find a correlation for heat transfer to walls in a 1296 t/h supercritical circulating fluidised bed (CFB) boiler. The effect of bed-to-wall heat transfer coefficient in a long active heat transfer surface was discussed, excluding the radiation component. Experiments for four different unit loads (i.e. 100% MCR, 80% MCR, 60% MCR and 40% MCR) were conducted at a constant excess air ratio and high level of bed pressure (ca. 6 kPa) in each test run. The empirical correlation of the heat transfer coefficient in a large-scale CFB boiler was mainly determined by two key operating parameters, suspension density and bed temperature. Furthermore, data processing was used in order to develop empirical correlation ranges between 3.05 to 5.35 m·s-1 for gas superficial velocity, 0.25 to 0.51 for the ratio of the secondary to the primary air, 1028 to 1137K for bed temperature inside the furnace chamber of a commercial CFB boiler, and 1.20 to 553 kg·m-3 for suspension density. The suspension density was specified on the base of pressure measurements inside the boiler’s combustion chamber using pressure sensors. Pressure measurements were collected at the measuring ports situated on the front wall of the combustion chamber. The obtained correlation of the heat transfer coefficient is in agreement with the data obtained from typical industrial CFB boilers.

Failure Analysis Case Study of a 1.5 Meter Space Flex Harness

2017 ◽  
Author(s):  
Erick Kim ◽  
Kamjou Mansour ◽  
Gil Garteiz ◽  
Javeck Verdugo ◽  
Ryan Ross ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Failure Modes ◽  
Field Of View ◽  
Area Of Interest ◽  
Air Stream ◽  
Novel Method ◽  
Temperature Controlled ◽  
Non Destructive ◽  
Failure Site

Abstract This paper presents the failure analysis on a 1.5m flex harness for a space flight instrument that exhibited two failure modes: global isolation resistances between all adjacent traces measured tens of milliohm and lower resistance on the order of 1 kiloohm was observed on several pins. It shows a novel method using a temperature controlled air stream while monitoring isolation resistance to identify a general area of interest of a low isolation resistance failure. The paper explains how isolation resistance measurements were taken and details the steps taken in both destructive and non-destructive analyses. In theory, infrared hotspot could have been completed along the length of the flex harness to locate the failure site. However, with a field of view of approximately 5 x 5 cm, this technique would have been time prohibitive.

Failure Analysis of CDM-ESD Damage in a GaAs RFIC

2000 ◽  
Author(s):  
Amy Poe ◽  
Steve Brockett ◽  
Tony Rubalcava
Keyword(s):  
Radio Frequency ◽  
Failure Analysis ◽  
Integrated Circuit ◽  
Production Test ◽  
Analysis Techniques ◽  
Device Model ◽  
Charged Device ◽  
Subsequent Failure

Abstract The intent of this work is to demonstrate the importance of charged device model (CDM) ESD testing and characterization by presenting a case study of a situation in which CDM testing proved invaluable in establishing the reliability of a GaAs radio frequency integrated circuit (RFIC). The problem originated when a sample of passing devices was retested to the final production test. Nine of the 200 sampled devices failed the retest, thus placing the reliability of all of the devices in question. The subsequent failure analysis indicated that the devices failed due to a short on one of two capacitors, bringing into question the reliability of the dielectric. Previous ESD characterization of the part had shown that a certain resistor was likely to fail at thresholds well below the level at which any capacitors were damaged. This paper will discuss the failure analysis techniques which were used and the testing performed to verify the failures were actually due to ESD, and not caused by weak capacitors.

Advanced IR-OBIRCH Analysis Technique for High Isb Failure Analysis

2010 ◽  
Author(s):  
Kuo Hsiung Chen ◽  
Wen Sheng Wu ◽  
Yu Hsiang Shu ◽  
Jian Chan Lin
Keyword(s):  
Failure Analysis ◽  
Failure Mechanisms ◽  
Fault Localization ◽  
Resistance Change ◽  
The Real ◽  
Analysis Techniques ◽  
Analysis Technique ◽  
Leakage Failure ◽  
Failure Site

Abstract IR-OBIRCH (Infrared Ray – Optical Beam Induced Resistance Change) is one of the main failure analysis techniques [1] [2] [3] [4]. It is a useful tool to do fault localization on leakage failure cases such as poor Via or contact connection, FEoL or BEoL pattern bridge, and etc. But the real failure sites associated with the above failure mechanisms are not always found at the OBIRCH spot locations. Sometimes the real failure site is far away from the OBIRCH spot and it will result in inconclusive PFA Analysis. Finding the real failure site is what matters the most for fault localization detection. In this paper, we will introduce one case using deep sub-micron process generation which suffers serious high Isb current at wafer donut region. In this case study a BEoL Via poor connection is found far away from the OBIRCH spots. This implies that layout tracing skill and relation investigation among OBIRCH spots are needed for successful failure analysis.

The Electrical Characterization and Physical Failure Analysis for Transistor Gate Leakage

2006 ◽  
Author(s):  
Tsung-Te Li ◽  
Chao-Chi Wu ◽  
Jung-Hsiang Chuang ◽  
Jon C. Lee
Keyword(s):  
Failure Analysis ◽  
Electrical Characterization ◽  
Physical Analysis ◽  
Gate Leakage ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Voltage Stress ◽  
Leakage Site

Abstract This article describes the electrical and physical analysis of gate leakage in nanometer transistors using conducting atomic force microscopy (C-AFM), nano-probing, transmission electron microscopy (TEM), and chemical decoration on simulated overstressed devices. A failure analysis case study involving a soft single bit failure is detailed. Following the nano-probing analysis, TEM cross sectioning of this failing device was performed. A voltage bias was applied to exaggerate the gate leakage site. Following this deliberate voltage overstress, a solution of boiling 10%wt KOH was used to etch decorate the gate leakage site followed by SEM inspection. Different transistor leakage behaviors can be identified with nano-probing measurements and then compared with simulation data for increased confidence in the failure analysis result. Nano-probing can be used to apply voltage stress on a transistor or a leakage path to worsen the weak point and then observe the leakage site easier.

Case Study in Fault Isolation of a Metal Short for Yield Enhancement

2010 ◽  
Author(s):  
Sarven Ipek ◽  
David Grosjean
Keyword(s):  
Failure Analysis ◽  
Failure Mechanism ◽  
Photon Emission ◽  
Fault Isolation ◽  
Yield Enhancement ◽  
Analysis Technique ◽  
Laser Signal ◽  
Signal Injection ◽  
Microscopy Techniques

Abstract The application of an individual failure analysis technique rarely provides the failure mechanism. More typically, the results of numerous techniques need to be combined and considered to locate and verify the correct failure mechanism. This paper describes a particular case in which different microscopy techniques (photon emission, laser signal injection, and current imaging) gave clues to the problem, which then needed to be combined with manual probing and a thorough understanding of the circuit to locate the defect. By combining probing of that circuit block with the mapping and emission results, the authors were able to understand the photon emission spots and the laser signal injection microscopy (LSIM) signatures to be effects of the defect. It also helped them narrow down the search for the defect so that LSIM on a small part of the circuit could lead to the actual defect.

Die-Level Scanning Capacitance Microscopy Fault Isolation on SOI Fin-FET Devices for Advanced Semiconductor Nodes

2018 ◽  
Author(s):  
Lucile C. Teague Sheridan ◽  
Tanya Schaeffer ◽  
Yuting Wei ◽  
Satish Kodali ◽  
Chong Khiam Oh
Keyword(s):  
Atomic Force Microscopy ◽  
Failure Analysis ◽  
Fault Isolation ◽  
Scanning Capacitance Microscopy ◽  
Force Microscopy ◽  
Atomic Force

Abstract It is widely acknowledged that Atomic force microscopy (AFM) methods such as conductive probe AFM (CAFM) and Scanning Capacitance Microscopy (SCM) are valuable tools for semiconductor failure analysis. One of the main advantages of these techniques is the ability to provide localized, die-level fault isolation over an area of several microns much faster than conventional nanoprobing methods. SCM, has advantages over CAFM in that it is not limited to bulk technologies and can be utilized for fault isolation on SOI-based technologies. Herein, we present a case-study of SCM die-level fault isolation on SOI-based FinFET technology at the 14nm node.

Laser Voltage Imaging: A New Perspective of Laser Voltage Probing

2010 ◽  
Author(s):  
Yin S. Ng ◽  
Ted Lundquist ◽  
Dmitry Skvortsov ◽  
Joy Liao ◽  
Steven Kasapi ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Functional Failure ◽  
Voltage Imaging ◽  
Laser Probing ◽  
New Perspective

Abstract Laser Voltage Imaging (LVI) is a new application developed from Laser Voltage Probing (LVP). Most LVP applications have focused on design debug or design characterization, and are seldom used for global functional failure analysis. LVI enables the failure analysis engineer to utilize laser probing techniques in the failure analysis realm. In this paper, we present LVI as an emerging FA technique. We will discuss setting up an LVI acquisition and present its current challenges. Finally, we will present an LVI application in the form of a case study.

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