scholarly journals KARAKTERISASI EKSTRAK TEH HITAM DAN TINTA CUMI-CUMI SEBAGAI FOTOSENSITISER PADA SEL SURYA BERBASIS PEWARNA TERSENSITISASI

SAINSTIS ◽  
2013 ◽  
Author(s):  
Rachmawati Ningsih ◽  
Hastuti Hastuti
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Alternative Energy ◽  
Supply Voltage ◽  
Black Tea ◽  
Halogen Lamp ◽  
X Ray Diffraction ◽  
X Ray ◽  
Crude Extracts ◽  
Absorption Wavelength

<p>One of the alternative energy potential to be developed to overcome  energy crisis in the world is an organic solar cells. In this research has been conducted by making a series of Dyes Sensitized Solar Cells (DSSC) using an organic dye from crude extracts of black tea (Camellia sinensis) and ink cuttlefish (Sepia acuelata). Solar cell system consisting of crystalline TiO2, glass conductors, dyes,</p> <p>a   electrolyte   solution   I-/I3- and   carbon   electrodes.   TiO2 crystals   were</p> <p>characterized using X-ray diffraction. Crude extracts of black tea and cuttlefish</p> <p>ink absorption wavelength was analyzed using UV-Vis spectrophotometer. The series of solar cells are measured values of voltage and electric current.</p> <p>The results of X-ray diffraction showed that crystalline TiO2 including anatase crystalline phase and a crystal size is 2.6 nm. The results of UV-Vis spectra of crude extracts of black tea and cuttlefish ink shows the absorption wavelength range in a row of 232-240 nm and 203-207 nm.</p> <p>Large solar cell power supply voltage without soaking, in a room without light and under a halogen lamp is 0.014 Volt and 0.023 Volt. Large voltage solar cells soaked in crude extracts of black tea for 1 hour at room without light and under a halogen lamp is 0.364 Volt and 0.401 Volt. While that is soaked for 2 weeks is</p> <p>0.113 Volts and 0.18 Volts.</p>

scholarly journals Synthesis of ZnO nanorods on ZnO/ITO seed layer by electrochemical method and its application in solar cell device

2013 ◽  
Vol 16 (4) ◽  
pp. 5-12
Author(s):  
Hoang Cao Son Tran ◽  
Khac Top Le ◽  
Duc Hao Nguyen ◽  
Thi Dong Tri Nguyen ◽  
Kien Quoc Luu ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Electrochemical Method ◽  
Zno Nanorods ◽  
Hybrid Solar Cells ◽  
X Ray Diffraction ◽  
Solar Cell Device ◽  
Sem Images ◽  
X Ray ◽  
Stable Flow

In this paper, we study on the effects of ZnO nanorods /seed ZnO on properties of hybrid solar cells. ZnO nanorods fabricated by electrochemical method of two-step stable flow of liquid Zn(NO3)2. 6H2O (0.005 M) and C6H12N4 (0.005 M). Morphology and optoelectronic properties of ZnO nanorods were studied by SEM images, UV-VIS transmission spectra, X-ray diffraction and photoluminescence spectrum. Elaboration of hybrid solar cells by inserting ZnO nanorods on organic photoactive layer of P3HT:PCBM and ITO, as result the solar cell conductivity performance is significantly improved. Experimental results show that ~ 1,392 mA/cm2 Jsc, Voc ~ 0.49 V, FF = 0.32, and PCE = 0.23%.

Temperature Dependent Characterization of Imbedded InAs Quantum Dots in GaAs Superlattice Solar Cell Structures by High Resolution X-ray Diffraction

2012 ◽  
Vol 1432 ◽  
Author(s):  
Josephine J. Sheng ◽  
David. C. Chapman ◽  
David M. Wilt ◽  
Stephen J. Polly ◽  
Christopher G. Bailey ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Solar Cell ◽  
High Resolution ◽  
Nanostructured Materials ◽  
X Ray Diffraction ◽  
Temperature Dependent ◽  
Inas Quantum Dots ◽  
X Ray ◽  
Cell Structures

ABSTRACTThe insertion of nanostructured materials (such as quantum wells, wires, and dots) into the intrinsic region of p-i-n solar cells introduces an intermediate band within the bandgap of the host material. It has been shown that the sub-bandgap conversion provided by the nanostructured materials, enhances the short circuit current as well as the overall efficiency of InAs quantum dots (QD) imbedded in GaAs superlattice (SL) solar cells [1]. As a contender for space applications, it is necessary to subject these solar cell structures to temperatures encountered in the Low Earth Orbit (LEO), probing for any material degradation. Herein, we focus on temperature dependent characterization using high resolution X-ray diffraction (HRXRD) of InAs QD enhanced GaAs solar cell structures with varying growth parameters. The structures characterized can be classified into three groups: (1) GaP strain compensation coverage, (2) GaAs barrier coverage, and (3) InAs coverage for QD formation. HRXRD rocking curves of each structure focusing around the GaAs peak are analyzed at a range of temperatures up to 200˚C. Although no noticeable shifts in the SL peaks are detected, interfacial diffusion decreased the resolution of fringes produced by reflections at the SL interfaces in test structures with varying InAs QD coverage. Unbalanced strain in the same structures shows a distortion in the GaAs peaks.

Morphologies of P3HT and P3HT/PCBM Thin Films Prepared by Drop Casting and Spin Coating

2013 ◽  
Vol 718-720 ◽  
pp. 3-6
Author(s):  
Masaya Miwa ◽  
Hideo Furuhashi
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Solar Cell ◽  
Absorption Spectroscopy ◽  
Spin Coating ◽  
Organic Films ◽  
X Ray Diffraction ◽  
P3ht Film ◽  
X Ray ◽  
Oriented Parallel

P3HT and P3HT/PCBM organic films are prepared by drop casting and spin coating and are used to fabricate solar cells on ITO. The solar cell properties are investigated by UVvisible absorption spectroscopy and X-ray diffraction (XRD). and their morphologies are discussed. The results indicate that the molecular chains of the P3HT film prepared by drop casting are perpendicular to the substrate, whereas those of the film prepared by spin coating are oriented parallel to the substrate. P3HT/PCBM films are prepared by spin coating using different PCBM/P3HT ratios.

scholarly journals Preparation and Characterisation of ZnO/NiO Nanocomposite Particles for Solar Cell Applications

2016 ◽  
Vol 2016 ◽  
pp. 1-5 ◽  
Author(s):  
S. Kerli ◽  
Ü. Alver
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Dye Sensitized Solar Cells ◽  
Hexagonal Wurtzite Structure ◽  
Morphological Properties ◽  
X Ray Diffraction ◽  
X Ray ◽  
Dye Sensitized ◽  
Ruthenium Dyes ◽  
Sensitized Solar Cells

The mixture of ZnO and NiO effect on solar cell has been investigated. ZnO and NiO particles were produced by hydrothermal method and the produced particles were annealed at 500°C for 1 hour. Crystal structure and morphological properties of particles were examined by X-ray diffraction (XRD) and scanning electron microscope (SEM). XRD measurements showed that ZnO particles have a hexagonal wurtzite structure and NiO particles have a cubic structure. SEM results show that both ZnO and NiO particles are the form of nanoparticles. Dye-sensitized solar cells were fabricated by N-719 (Ruthenium) dyes and mixing ZnO/NiO particles in different ratios, 100/0, 50/50, and 0/100. It was observed that the solar cells made with ZnO have the highest performance with the efficiency of 0.542%. In addition, it was observed that when amount of NiO ratio increases in the mixture of ZnO/NiO, the efficiencies of DSSCs were observed to decrease.

scholarly journals Effect Of Fluorine Doping On The Structural, Optical And Electrical Properties Of Spin Coated Tin Oxide Thin Films For Solar Cells Application

2019 ◽  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Electrical Properties ◽  
Tin Oxide ◽  
Transparent Conducting Oxide ◽  
Optical And Electrical Properties ◽  
Fluorine Doping ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transparent Conducting

Transparent conducting oxide (TCO) thin films are materials of significance for their applications in optoelectronics and sun powered cells. Fluorine-doped tin oxide (FTO) is an elective material in the advancement of TCO films. This paper reports the impact of fluorine doping on structural, optical and electrical properties of tin oxide thin films for solar cells application. The sol-gel was prepared from anhydrous stannous chloride, SnCl2 as an originator, 2-methoxyethanol as a solvent, di-ethanolamine as a preservative and ammonium fluoride as the dopant source. FTO precursor solution was formulated to obtain 0, 5, 10, 15 and 20 % doping concentration and deposited on glass substrates by means of spin coater at the rate of 2000 rpm for 40 seconds. After pre-heated at 200 oC, the samples were annealed at 600 oC for 2 h. The structural, optical and electrical characteristics of prepared films were characterized using X-ray diffraction (XRD) analysis, UV-visible spectroscopy and electrical measurement. X-ray diffraction (XRD) investigation of the films demonstrated that the films were polycrystalline in nature with tetragonal-cassiterite structure with most extraordinary pinnacle having a grain size of 17.01 nm. Doping with fluorine decreases the crystallite size. There was increment in the absorbance of the film with increasing wavelength and the transmittance was basically reduced with increasing fluorine doping in the visible region. The energy band gaps were in the range of 4.106-4.121 eV. The sheet resistance were observed to decrease as the doping percentage of fluorine increased with exception at higher doping of 15 and 20 %. In view of these outcomes, FTO thin films prepared could have useful application in transparent conducting oxide electrode in solar cell.

Crystal Characterization of Spherical Silicon Solar Cell by X-ray Diffraction

2006 ◽  
Vol 45 (5A) ◽  
pp. 3933-3937 ◽  
Author(s):  
Satoshi Omae ◽  
Takashi Minemoto ◽  
Mikio Murozono ◽  
Hideyuki Takakura ◽  
Yoshihiro Hamakawa
Keyword(s):  
Solar Cell ◽  
Silicon Solar Cell ◽  
X Ray Diffraction ◽  
X Ray ◽  
Crystal Characterization

An investigation of physical properties and photovoltaic performance of methylammonium lead-tin iodide (CH3NH3Sn1-xPbxI3) solar cells

2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Omid Malekan ◽  
Mehdi Adelifard ◽  
Mohamad Mehdi Bagheri Mohagheghi
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Conversion Efficiency ◽  
Photovoltaic Performance ◽  
Perovskite Solar Cells ◽  
X Ray Diffraction ◽  
Content Type ◽  
X Ray ◽  
High Absorption Coefficient ◽  
High Absorption

Purpose In the past several years, CH3NH3PbI3 perovskite material has been extensively evaluated as an absorber layer of perovskite solar cells due to its excellent structural and optical properties, and greater than 22% conversion efficiency. However, improvement and future commercialization of solar cells based on CH3NH3PbI3 encountered restrictions due to toxicity and instability of the lead element. Recently, studies on properties of lead-free and mixture of lead with other cations perovskite thin films as light absorber materials have been reported. The purpose of this paper was the fabrication of CH3NH3Sn1-xPbxI3 thin films with different SnI2 concentrations in ambient condition, and study on the structural, morphological, optical, and photovoltaic performance of the studied solar cells. The X-ray diffraction studies revealed the formation of both CH3NH3PbI3 and CH3NH3SnI3 phases with increasing the Sn concentration, and improvement in crystallinity and morphology was also observed. All perovskite layers had a relatively high absorption coefficient >104 cm−1 in the visible wavelengths, and the bandgap values varied in the range from 1.46 to 1.63 eV. Perovskite solar cells based on these thin films have been fabricated, and device performance was investigated. Results showed that photo-conversion efficiency (PCE) for the pure CH3NH3PbI3sample was 1.20%. With adding SnI2, PCE was increased to 4.48%. Design/methodology/approach In this work, the author mixed tin and lead with different percentages in the perovskite thin film. Also, the preparation of these layers and also other layers to fabricate solar cells based on them were conducted in an open and non-glove box environment. Finally, the effect of [Sn/Pb] ratio in the CH3NH3Sn1-xPbxI3 layers on the structural, morphological, optical, electrical and photovoltaic performance have been investigated. Findings CH3NH3Sn1-xPbxI3 (x = 0.0, 0.25, 0.50, 0.75, 1.0) perovskite thin films have been grown by a spin-coating technique. It was found that as tin concentration increases, the X-ray diffraction and FESEM images studies revealed the formation of both CH3NH3PbI3 and CH3NH3SnI3 phases, and improvement in crystallinity, and morphology; all thin films had high absorption coefficient values close to 104 cm−1 in the visible region, and the direct optical bandgap in the layers decreases from 1.63 eV in pure CH3NH3SnI3 to 1.46 eV for CH3NH3Sn0.0.25Pb0.75I3 samples; all thin films had p-type conductivity, and mobility and carrier density increased; perovskite solar cells based on these thin films have been fabricated, and device performance was investigated. Results showed that photo-conversion efficiency (PCE) for the pure CH3NH3PbI3sample was 1.20%. With adding SnI2, PCE was increased to 4.48%. Originality/value The preparation method seems to be interesting as it is in an ambient environment without the protection of nitrogen or argon gas.

Efficiency Enhancement by Insertion of ZnO Recombination Barrier Layer in CdS Quantum Dot-Sensitized Solar Cells

2021 ◽  
Vol 21 (7) ◽  
pp. 3800-3805
Author(s):  
Abdul Razzaq ◽  
Muhammad Zafar ◽  
Tahir Saif ◽  
Jun Young Lee ◽  
Jung Ki Park ◽  
...  
Keyword(s):  
Solar Cell ◽  
Quantum Dot ◽  
Barrier Layer ◽  
Open Circuit ◽  
X Ray Diffraction ◽  
Solar Cell Performance ◽  
X Ray ◽  
Cds Quantum Dot ◽  
Back Transfer ◽  
Photovoltaic Characteristics

In this investigation we report the formation of thin ZnO recombination barrier layer at TiO2/CdS interface aimed for the improvement in performance of CdS sensitized solar cell. The film was deposited upon nanocrystalline mesoporous TiO2 surface by following a simple chemical process and characterized, using UV-Visible spectroscopy, X-ray diffraction and electron dispersive X-ray measurements. The insertion of ZnO thin layer enhances the QDSC (Quantum dot sensitized solar cell) performance, contributed mainly by an increase in open circuit voltage (Voc) due to reduced electron back transfer from TiO2 conduction band. Moreover, the analysis of photovoltaic characteristics upon increasing the thickness of the ZnO film reveals that the ZnO recombination barrier layer with optimum thickness at porous TiO2/CdS interface proved to be an effective potential barrier for minimizing electron back recombination.

Control by Mixed-Chloride Additives of the Quality and Homogeneity of Bulk Halide Perovskite upon Film Formation Process

2021 ◽  
Author(s):  
Thierry Pauporté ◽  
Daming zheng
Keyword(s):  
Solar Cells ◽  
Formation Process ◽  
High Efficiency ◽  
Film Formation ◽  
Perovskite Solar Cells ◽  
X Ray Diffraction ◽  
X Ray ◽  
Stability Issue ◽  
Halide Perovskite ◽  
The Stability

Nowadays, overcoming the stability issue of perovskite solar cells (PSCs) while keeping high efficiency has become an urgent need for the future of this technology. By using x-ray diffraction (XRD),...

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