scholarly journals Method for Determining the Schottky Diodes Electrical Parameters

2021 ◽  
Vol 26 (3) ◽  
Author(s):  
O. V. Tsukanov ◽  
O. H. Dramaretskyi ◽  
Yurii Viktorovych Didenko ◽  
Dmytro Dmytrovych Tatarchuk
Keyword(s):  
Standard Deviation ◽  
Potential Barrier ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Calculation Error ◽  
Electrical Parameters ◽  
Voltage Range ◽  
Temperature Potential ◽  
Direct Approximation

When studying the operation of Schottky diodes the most important electrical parameters are the height of the potential barrier, the coefficient of ideality, the saturation current and the series resistance of the material and contacts. These parameters can be determined from the experimental volt-ampere characteristics. The article considers the methods of determining these electrical parameters of Schottky diodes, as well as the factors that affect the accuracy of calculations. The existing methods for calculating the electrical parameters of Schottky diodes are analyzed, namely: the method of Norde, Roderick, Chong, Sato and the method of direct approximation. The Norde method was developed for a coefficient of ideality equal to one for cases where the effect of series resistance on the I–V characteristics makes a significant error in determining the barrier height by simpler methods. A significant disadvantage of this method is that in many cases the coefficient of ideality is not equal to one, even in the case of an ideal diode, which makes an error in the calculation result. The advantage of Roderick's method is the possibility of describing the forward and reverse branches of the I–V characteristics by one dependence, as well as taking into account measurements at voltages less than tripled temperature potential. The disadvantages of this method include the lack of consideration of the effect of series resistance, which may result in additional errors. The main advantage of the Chong method is the determination of the series resistance together with the height of the barrier and the coefficient of ideality, which not only provides additional information about the contact, but also convenient in terms of automation of the calculation process. The disadvantages include the possibility of applying the method only to the voltage range above the tripled temperature potential. The disadvantages of Sato methods and direct approximation include the fact that the calculation is performed at one point of the I–V curve, which can negatively affect the accuracy. It is also shown that these methods have a significant standard deviation of the calculated values from the experimental ones, which is due to the temperature dependence of the height of the potential barrier and the dependence of the coefficient of ideality on the voltage. Also, the reason for the increase in the calculation error of the electrical parameters in all five methods is the decrease in the length of the I–V characteristics in logarithmic coordinates. When using any of the considered methods, the calculation is performed in logarithmic coordinates, which complicates the determination of the boundaries of the I–V section, where the dependence of the parameters of the Schottky diode on the voltage is insignificant. A new algorithm for calculating the electrical parameters of Schottky diodes has been developed. Based on the conjugate gradient method, a method for optimizing the algorithm for calculating the electrical parameters of Schottky diodes was developed, which made it possible to reduce the standard deviation by more than an order of magnitude. The developed algorithm is verified by comparing the calculated volt-ampere characteristics of Schottky diodes with those obtained experimentally. To construct the calculated volt-ampere characteristics, the values of the electrical parameters of Schottky diodes were used, which were determined by the presented algorithm. The results of the calculation are in good agreement with the experimental data. The proposed method can be used both in scientific work to study the properties of semiconductor materials, and in production to control the quality of Schottky diodes.

PHYSICAL ORIGINS OF 1/f NOISE IN Si δ-DOPED SCHOTTKY DIODES

2014 ◽  
Vol 13 (01) ◽  
pp. 1450003 ◽  
Author(s):  
ALEXEY V. KLYUEV ◽  
EVGENY I. SHMELEV ◽  
ARKADY V. YAKIMOV
Keyword(s):  
Experimental Data ◽  
Schottky Diode ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Voltage Characteristic ◽  
Schottky Junction ◽  
Current Voltage Characteristic ◽  
Impurity Atoms ◽  
Current Voltage

A model of Schottky diode with δ-doping is suggested. The aim is the determination of technological areas of the diode, which are responsible for the 1/f noise. Series resistance of base and contacts, and the possible leakage are taken into account. Equivalent parameters of the diode are defined from the analysis of the current–voltage characteristic. The model of fluctuations in the charge of non-compensated donors in δ-layer of Schottky junction (ΔNs – model) and model of 1/f noise in leakage current are suggested for an explanation of experimental data. Our study show that, in the investigated diodes, in a million atomic impurities, there are about 1–10 special impurity atoms with stochastically modulated ionization energy.

Electrical Properties Dependent on Schottky Diode Pd/PSC-pSi(100) Based on Hydrocarbon Gas Sensor

2009 ◽  
Vol 609 ◽  
pp. 195-199
Author(s):  
A. Keffous ◽  
M. Kechouane ◽  
Tahar Kerdja ◽  
Y. Belkacem ◽  
K. Bourenane ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Barrier Height ◽  
Schottky Diode ◽  
Ideality Factor ◽  
Gas Sensing ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Electrical Parameters ◽  
Porous Sic ◽  
Sic Films

In this paper we present the study of a Schottky diode gas sensing by using porous SiC films with palladium as a catalytic metal. The Schottky diodes were used for the first time for hydrocarbon (C2H6) gas sensing. The properties of the porous SiC films formed by electrochemical method were investigated by scanning electron microscopy (SEM). The electrical measurements were made at room temperature (295 K) in different ambient. The effect of the porous surface structure was investigated by evaluating electrical parameters such as the ideality factor (n), barrier height (Bp) and series resistance (Rs). The porous layer significantly affects the electrical properties of the Schottky diodes. Analysis of current-voltage (I-V) characteristics showed that the forward current might be described by a classical thermal emission theory. The ideality factor determined by the I–V characteristics was found to be dependent on the SiC thickness. For a thinner SiC layer (0.16 µm), the electrical parameters n was found around 1.135, 0.7041 eV for a barrier height and 45  for a series resistance, but for a thicker one (1.6 µm) n, Bp and Rs were 1.368, 0.7756 eV and 130 , respectively. The low value of the series resistance obtained using Cheung’s method clearly indicated the high performance of the Schottky diode for thinner SiC layer. This effect showed the uniformity of the SiC layer. Finally, sensitivity around 66 % and selectivity of the sensors were reached by using the PSC layer at low voltages below 0.5 Volt.

Pinning Fermi Level of p-GaN due to Three Different (Zr, Ti, and Cr) Metal Contact

2006 ◽  
Vol 517 ◽  
pp. 262-266 ◽  
Author(s):  
C.K. Tan ◽  
Azlan Abdul Aziz ◽  
Hassan Zainuriah ◽  
F.K. Yam ◽  
C.W. Lim ◽  
...  
Keyword(s):  
Fermi Level ◽  
Schottky Diodes ◽  
Single Layer ◽  
Saturation Current ◽  
Metal Contacts ◽  
Electrical Parameters ◽  
Barrier Heights ◽  
Layer Deposition ◽  
Current Voltage

The Current-Voltage-Temperature (I-V-T) characteristics of single layer deposition, consisting of Zr, Ti, or Cr/p-GaN Schottky diodes were determined in the temperature range 27- 100oC. Sputtering method was used for deposition of these metals on p-GaN. Analysis of the measured characteristics at room temperature allows the determination of the electrical parameters, the saturation current Io and the ideality factorη. The barrier heights and effective Richardson coefficients were determined through activation energy plot. It was found that pinning of Fermi level occurred for these metal contacts on p-GaN with the carrier concentration of 5.6x 1017 cm-3, where the Schottky barrier heights of Zr, Ti, or Cr/p-GaN are determined to be in the same range (~0.87eV).

Electrical and Structural Characterization of Ti Contacts to Si0.89 Ge0.11/Si(001) Epilayers

1995 ◽  
Vol 402 ◽  
Author(s):  
M. Lyakas ◽  
M. Beregovsky ◽  
I. Moskowitz ◽  
M. Eizenberg
Keyword(s):  
Fermi Level ◽  
Structural Characterization ◽  
Ideality Factor ◽  
Series Resistance ◽  
Schottky Diodes ◽  
Flat Band ◽  
Thermal Treatments ◽  
Electrical Parameters ◽  
Semiconductor Contacts

AbstractThe properties of thin (350 Å) Ti layers deposited on Si0.89Ge0.11 layers epitaxially grown on Si(001) were studied as a function of isochronal (30 min.) thermal treatments in the temperature range Ta=550–800°C. Both as-deposited and annealed at Ta up to 750°C Schottky diodes revealed near-ideal I–V and C–V characteristics with the same flat-band barrier height eV. The results indicate that at these Ta the Fermi level is pinned with respect to the conduction band.Annealing at 800°C resulted in an improvement of the Schottky diodes quality and a drop in and the series resistance Rs of the contacts. The values of the ideality factor n and ( measured were 1.03±0.02 and 0.56±0.007 eV, correspondingly. The electrical parameters of these metal/semiconductor contacts were correlated with the dynamics of interfacial reactions due to the applied heat-treatments.

An Automated Procedure for the Determination of Ammonia in Tobacco

1972 ◽  
Vol 6 (4) ◽  
Author(s):  
P.F. Collins ◽  
W.W. Lawrence ◽  
J.F. Williams
Keyword(s):  
Standard Deviation ◽  
Relative Standard Deviation ◽  
Distillation Method ◽  
Relative Standard ◽  
Tobacco Sample ◽  
Automated Determination

AbstractA procedure for the automated determination of ammonia in tobacco has been developed. Ammonia is extracted from the ground tobacco sample with water and is determined with a Technicon Auto Analyser system which employs separation of the ammonia through volatilization followed by colourimetry using the phenate-hypochlorite reaction. The procedure has been applied to a variety of tobaccos containing from 0.02 to 0.5 % ammonia with an overall relative standard deviation of 2 %. The accuracy of the procedure as judged by recovery tests and by comparison to a manual distillation method is considered adequate

The Use of TMAH to Etch Silicon and Expose Metal Bridging Failures

2000 ◽  
Author(s):  
Mark Morris ◽  
James Mohr ◽  
Esteban Ortiz ◽  
Steven Englebretson
Keyword(s):  
Failure Mechanism ◽  
Schottky Diodes ◽  
Tetramethylammonium Hydroxide ◽  
Novel Approach ◽  
Failure Location ◽  
Metal Etching ◽  
Plastic Mold

Abstract Determination of metal bridging failures on plastic encapsulated devices is difficult due to the metal etching effects that occur while removing many of the plastic mold compounds. Typically, the acids used to remove the encapsulation are corrosive to the metals that are found within the device. Thus, decapsulation can result in removal of the failure mechanism. Mechanical techniques are often not successful due to damage that results in destruction of the die and failure mechanism. This paper discusses a novel approach to these types of failures using a silicon etch and a backside evaluation. The desirable characteristics of the technique would be to remove the silicon and leave typical device metals unaffected. It would also be preferable that the device passivation and oxides not be etched so that the failure location is not disturbed. The use of Tetramethylammonium Hydroxide (TMAH), was found to fit these prerequisites. The technique was tested on clip attached Schottky diodes that exhibited resistive shorting. The use of the TMAH technique was successful at exposing thin solder bridges that extruded over the edge of the die resulting in failure.

Determination of alcohols in mixtures by 19F NMR spectroscopy using hexefluoroacetone reagent

1982 ◽  
Vol 47 (7) ◽  
pp. 1973-1978 ◽  
Author(s):  
Jiří Karhan ◽  
Zbyněk Ksandr ◽  
Jiřina Vlková ◽  
Věra Špatná
Keyword(s):  
Standard Deviation ◽  
Nmr Spectroscopy ◽  
Standard Method ◽  
Internal Standard ◽  
Internal Standard Method ◽  
Concentration Region ◽  
Experimental Conditions ◽  
Curve Method ◽  
Sample Preparation Procedure

The determination of alcohols by 19F NMR spectroscopy making use of their reaction with hexafluoroacetone giving rise to hemiacetals was studied on butanols. The calibration curve method and the internal standard method were used and the results were mutually compared. The effects of some experimental conditions, viz. the sample preparation procedure, concentration, spectrometer setting, and electronic integration, were investigated; the conditions, particularly the concentrations, proved to have a statistically significant effect on the results of determination. For the internal standard method, the standard deviation was 0.061 in the concentration region 0.032-0.74 mol l-1. The method was applied to a determination of alcohols in the distillation residue from an oxo synthesis.

Sign in / Sign up

Export Citation Format

Share Document