Fabrication and Characterization of Copper Oxide Resistive Memory Devices

2011 ◽  
Vol 1337 ◽  
Author(s):  
S.M. Bishop ◽  
B.D. Briggs ◽  
Z.P. Rice ◽  
S. Addepalli ◽  
N.R. McDonald ◽  
...  
Keyword(s):  
Copper Oxide ◽  
Electrical Contact ◽  
Switching Behavior ◽  
Memory Devices ◽  
Plasma Oxidation ◽  
Resistive Memory ◽  
Oxide Interface ◽  
Bipolar Switching ◽  
Current Voltage

ABSTRACTThree synthesis techniques have been explored as routes to produce copper oxide for use in resistive memory devices (RMDs). The major results and their impact on device current-voltage characteristics are summarized. The majority of the devices fabricated from thermally oxidized copper exhibited a diode-like behavior independent of the top electrode. When these devices were etched to form mesa structures, bipolar switching was observed with set voltages <2.5 V, reset voltages <(-1) V and ROFF/RON ∼103-104. Bipolar switching behavior was also observed for devices fabricated from copper oxide synthesized by RT plasma oxidation (ROFF/RON up to 108). Voiding at the copper-copper oxide interface occurred in films produced by thermal and plasma oxidation performed at ≥200°C. The copper oxide synthesized by reactive sputtering had large areas of open volume in the microstructure; this resulted in short circuited devices because of electrical contact between the bottom and top electrodes. The results for fabricating copper oxide into ≤100 nm features are also discussed.

Synthesis of Resistive Memory Oxides by Ion Implantation

2012 ◽  
Vol 1430 ◽  
Author(s):  
S.M. Bishop ◽  
Z.P. Rice ◽  
B.D. Briggs ◽  
H. Bakhru ◽  
N.C. Cady
Keyword(s):  
Thin Films ◽  
Copper Oxide ◽  
Tantalum Oxide ◽  
Switching Behavior ◽  
Resistive Memory ◽  
Bipolar Resistive Switching ◽  
Technology Scaling ◽  
Oxygen Implantation ◽  
Current Voltage ◽  
The Difference

ABSTRACTIn this work, we report on the use ion of implantation to synthesize resistive memory oxides. The surface of copper thin films was converted to copper oxide using oxygen implantation. Devices fabricated from the copper oxide (CuxO) layers exhibited unipolar switching behavior without the need for a forming voltage. Technology scaling was demonstrated by oxygen implanting copper damascene vias. Unipolar switching was observed in via-based devices down to 48 nm. The current-voltage data of devices scaled from 100 μm to 48 nm suggests that the RESET transition is related to localized Joule heating. Tantalum oxide (TaxOy) was also created by oxygen implantation but exhibited bipolar resistive switching. Analysis of the conduction suggests that the difference between the two resistance states in these devices is largely due to a lowering of the Pt-TaxOy Schottky barrier.

Resistive switching characteristics of all-solution-based Ag/TiO2/Mo-doped In2O3devices for non-volatile memory applications

2016 ◽  
Vol 4 (46) ◽  
pp. 10967-10972 ◽  
Author(s):  
Sujaya Kumar Vishwanath ◽  
Jihoon Kim
Keyword(s):  
Resistive Switching ◽  
Retention Time ◽  
Elevated Temperatures ◽  
Switching Behavior ◽  
Memory Devices ◽  
Bipolar Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Characteristics ◽  
Memory Applications

The all-solution-based memory devices demonstrated excellent bipolar switching behavior with a high resistive switching ratio of 103, excellent endurance of more than 1000 cycles, stable retention time greater than 104s at elevated temperatures, and fast programming speed of 250 ns.

Influence of Copper on the Switching Properties of Hafnium Oxide-Based Resistive Memory

2011 ◽  
Vol 1337 ◽  
Author(s):  
B.D. Briggs ◽  
S.M. Bishop ◽  
K.D. Leedy ◽  
B. Butcher ◽  
R. L. Moore ◽  
...  
Keyword(s):  
Photoelectron Spectroscopy ◽  
Hafnium Oxide ◽  
Copper Concentration ◽  
Atomic Layer ◽  
Metal Electrode ◽  
Pulse Mode ◽  
Switching Behavior ◽  
Material Structure ◽  
Memory Devices ◽  
Resistive Memory

ABSTRACTHafnium oxide-based resistive memory devices have been fabricated on copper bottom electrodes. The HfOx active layers in these devices were deposited by atomic layer deposition at 250 °C with tetrakis(dimethylamido)hafnium(IV) as the metal precursor and an O2 plasma as the reactant. Depth profiles of the HfOx by x-ray photoelectron spectroscopy and secondary ion mass spectroscopy revealed a copper concentration on the order of five atomic percent throughout the HfOx film. This phenomenon has not been previously reported in resistive switching literature and therefore may have gone unnoticed by other investigators. The MIM structures fabricated from the HfOx exhibited non-polar behavior, independent of the top metal electrode (Ni, Pt, Al, Au). These results are analogous to the non-polar switching behavior observed by Yang et al. [2] for intentionally Cu-doped HfOx resistive memory devices. The distinguishing characteristic of the material structure produced in this research is that the copper concentration increases to 60 % in a conducting surface copper oxide layer ~20 nm thick. Lastly, the results from both sweep- and pulse-mode current-voltage measurements are presented and preliminary work on fabricating sub-100 nm devices is summarized.

scholarly journals Optically Modulated Resistance Switching Polarities in BaTiO3 Thin Film

2020 ◽  
Author(s):  
Jing Wang ◽  
Bailey Bedford ◽  
Chanle Chen ◽  
Ludi Miao ◽  
Binghcheng Luo
Keyword(s):  
Thin Film ◽  
Oxygen Vacancy ◽  
Excitation Energy ◽  
Ultraviolet Light ◽  
Light Response ◽  
Resistance Switching ◽  
The State ◽  
Switching Behavior ◽  
Memory Devices ◽  
Resistive Memory

The light response and resistance switching behavior in BaTiO3 (BTO) films are studied for a symmetric Pt/BTO/Pt structure. The resistance of films as a function of time with and without ultraviolet light has been studied. Furthermore, resistance switching behavior was clearly observed based on the application of 365 nm wavelength ultraviolet light. Consequently, the polarities of resistance switching can be controlled by ultraviolet light when the energy is larger than the band excitation energy. It is proposed that the polarity of the resistance switching is dictated by the competition of the ferroelectricity and oxygen vacancy migration. This provides a new mechanism for modulating the state of ferroelectric resistive memory devices.

Electrical Characterization of Unipolar Organic Resistive Memory Devices Scaled Down by a Direct Metal-Transfer Method

2011 ◽  
Vol 23 (18) ◽  
pp. 2104-2107 ◽  
Author(s):  
Jin Ju Kim ◽  
Byungjin Cho ◽  
Ki Seok Kim ◽  
Takhee Lee ◽  
Gun Young Jung
Keyword(s):  
Electrical Characterization ◽  
Metal Transfer ◽  
Memory Devices ◽  
Resistive Memory ◽  
Transfer Method

Annealing Effect on the Performance of Copper Oxide Resistive Memory Devices

2020 ◽  
Vol 67 (3) ◽  
pp. 976-983 ◽  
Author(s):  
Chih-Chieh Hsu ◽  
Yu-Sheng Lin ◽  
Chao-Wen Cheng ◽  
Wun-Ciang Jhang
Keyword(s):  
Copper Oxide ◽  
Annealing Effect ◽  
Memory Devices ◽  
Resistive Memory

Tuning the switching behavior of binary oxide-based resistive memory devices by inserting an ultra-thin chemically active metal nanolayer: a case study on the Ta2O5–Ta system

2015 ◽  
Vol 17 (19) ◽  
pp. 12849-12856 ◽  
Author(s):  
Shuang Gao ◽  
Fei Zeng ◽  
Minjuan Wang ◽  
Guangyue Wang ◽  
Cheng Song ◽  
...  
Keyword(s):  
Resistive Switching ◽  
Binary Oxide ◽  
Switching Behavior ◽  
Memory Devices ◽  
Resistive Memory ◽  
Resistive Switching Behavior ◽  
System P ◽  
Active Metal

The nonpolar resistive switching behavior of the Pt/Ta2O5/Pt structure can be transformed into the bipolar and complementary ones by inserting 2 and 4 nm Ta nanolayers, respectively.

Ion implantation synthesized copper oxide-based resistive memory devices

2011 ◽  
Vol 99 (20) ◽  
pp. 202102 ◽  
Author(s):  
S. M. Bishop ◽  
H. Bakhru ◽  
S. W. Novak ◽  
B. D. Briggs ◽  
R. J. Matyi ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Copper Oxide ◽  
Memory Devices ◽  
Resistive Memory

Effect of Various Electrode Materials in Non-Volatile Memory Device Using Poly(3,4-Ethylenedioxythiophene):Poly(Styrenesulfonate) (PEDOT:PSS) Thin Films

2008 ◽  
Vol 54 ◽  
pp. 470-473 ◽  
Author(s):  
Hun Jun Ha ◽  
J.M. Lee ◽  
M. Kim ◽  
O.H. Kim
Keyword(s):  
Thin Films ◽  
Work Function ◽  
Electrode Materials ◽  
Memory Device ◽  
Current Level ◽  
Switching Behavior ◽  
Memory Devices ◽  
Carrier Injection ◽  
Bipolar Switching ◽  
Non Volatile Memory

We have studied the effect of various electrodes on non-volatile polymer memory devices. The ITO/PEDOT:PSS/Top electrode (TE) devices had bipolar switching behavior. The OFF current level of devices increased from 3×10-4 A to 3×10-3 A and the ON voltage decreased from 0.8 V to 0.5 V as the TE work function increased. The yield of devices decreased from over 50 % to under 10 % as the TE work function of devices increased. This result occurred because carrier injection was affected by the TE work function.

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