Influence of Variation in Oxide layer Thickness on Analog and RF performances of SOI FinFET

2021 ◽  
Author(s):  
Dhananjaya Tripathy ◽  
Debiprasad Priyabrata Acharya ◽  
Prakash Kumar Rout
Keyword(s):  
Oxide Layer ◽  
Layer Thickness ◽  
Drain Current ◽  
Oxide Layer Thickness ◽  
Maximum Frequency ◽  
Performance Parameters ◽  
Gain Bandwidth ◽  
Current Output ◽  
Rf Performances ◽  
Output Conductance

Abstract In this paper, the influence of oxide (SiO2) layer thickness on the different figure of merits of a FinFET is analysed by varying the oxide layer thickness which is present between the gate and the Fin. Here, the overall thickness of the FinFET is taken to be 30nm, and the oxide (SiO2) layer thickness is changed from 0.8 nm to 3nm, and the analog, radio frequency parameters are determined for different structures. The performance parameters like drain current (ID), transconductance generation factor (TGF), transconductance (gm), output conductance (gds), parasitic capacitances like Cgs, Cgd, Cgg, cut-off frequency (fT), gain bandwidth product (GBW) and maximum frequency of oscillation (fmax) are calculated to learn the influence of variation in the FinFET oxide (SiO2) layer thickness. It is detected from the result and analysis that the drain current, output conductance, transconductance generation factor, transconductance and gain bandwidth product improve with decrement in oxide layer thickness. But as a tradeoff, the internal capacitances like Cgs, Cgd, Cgg, maximum frequency of oscillation and cut-off frequency degrade when there is a reduction in oxide (SiO2) layer thickness.

Characterization of Inhomogeneity in Thermal Oxide SiO2 Films on 4H-SiC Epitaxial Substrates by a Combination of Fourier Transform Infrared Spectroscopy and Cathodoluminescence Spectroscopy

2018 ◽  
Vol 924 ◽  
pp. 273-276 ◽  
Author(s):  
Masanobu Yoshikawa ◽  
Keiko Inoue ◽  
Junichiro Sameshima ◽  
Hirohumi Seki
Keyword(s):  
Fourier Transform ◽  
Oxide Layer ◽  
Layer Thickness ◽  
Phonon Mode ◽  
Fourier Transform Infrared ◽  
Blue Shift ◽  
Peak Frequency ◽  
Oxide Layer Thickness ◽  
Thermal Oxide ◽  
Ft Ir

We measured Fourier transform infrared (FT-IR) and cathodoluminescence (CL) spectra of SiO2 films with a various thickness, grown on 4H-SiC substrates. The peak frequency of the transverse optical (TO) phonon mode was blue-shifted by about 5 cm−1 as the oxide-layer thickness decreased from 50-60 nm to 10 nm. The blue shift of the TO mode is considerd to be caused by interfacial compressive stresses in the oxide-layer. On the other hand, the TO phonon mode was found to dramatically decrease as the oxide-layer thickness decreased from 10 nm to 1.7 nm. The CL measurement indicates that the intensity of the CL peaks at about 460 and 490 nm attributed to oxygen vacancy centers (OVCs) for No.2 become stronger than that for No.1. From a comparison between FT-IR and CL measurements, we concluded that the red-shift of the TO phonon with decreasing the oxide-layer thickness can mainly be attributed to an increase in inhomogeneity at the SiO2/SiC interface with decreasing oxide-layer thickness.

The possibility to control the thickness of the oxide layer on the titanium Grade 2 by mechanical activation and heat treatment

2020 ◽  
Vol 2 (100) ◽  
pp. 70-77
Author(s):  
M. Szota ◽  
A. Łukaszewicz ◽  
K. Machnik
Keyword(s):  
Heat Treatment ◽  
Mechanical Activation ◽  
Oxide Layer ◽  
Layer Thickness ◽  
Pure Titanium ◽  
Medical Application ◽  
Oxide Layer Thickness ◽  
Surface Development ◽  
Titanium Grade ◽  
Practical Implications

Purpose: The paper presents the results of microstructure, surface development and thickness of the oxide layer on the pure titanium Grade 2 after mechanical activation and heat treatment (550°C/5h). Design/methodology/approach: Studies show that it is possible to control the thickness of the oxide layer by using different materials to change the roughness of surface - mechanical activation before heat treatment. After mechanical activation and heat treatment, the results of the thickness of the oxide layer as well as a level of surface development were obtained, presented and discussed. Findings: The conducted research have proved that mechanical activation of the surface which cause increase of surface development results in greater thickness of oxide layer which is formed during heat treatment. Nevertheless mechanical activation that results in decrease of surface development, such as polishing, results in decrease of oxide layer thickness. Research limitations/implications: The conducted research have showed up that mechanical activation of the surface which cause increase of surface development results in greater thickness of oxide layer which is formed during heat treatment. Nevertheless, mechanical activation that results in decrease of surface development, such as polishing, results in decrease of oxide layer thickness. Practical implications: are possible using similar method for passivation titanium alloys for medical application. Originality/value: The paper presents the possibility of using mechanical preactivation of surface before heat treatment passivation.

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