scholarly journals Influence of Strong Light on the Performance of Piezoresistive Pressure Sensor

Author(s):  
Mimi Huang ◽  
Libo Zhao ◽  
Zutang Wu ◽  
Xiangguang Han ◽  
Mingzhi Yu ◽  
...  

Abstract It is found that the strong light in the explosion field has great interference to the piezoresistive pressure sensor, then the shock wave data obtained by the sensor is distorted badly. To study the influence mechanism of the strong light on the piezoresistive pressure sensor, a strong light experimental platform is built. The positions of the sensor and the light source are adjusted, and the outputs of the piezoresistive pressure sensor are observed. Through microscopic simulation, the influence of different light intensities on the piezoresistive pressure sensor is analyzed. In order to reduce the influence of strong light on the performance of piezoresistive pressure sensor, we propose to add a reflective layer on the pressure surface of the sensor. The light reflection effects of different film thicknesses are analyzed through film simulation software. At the same time, the reflection effect is verified through experiments. To explain the effect of the reflective layer on the suppression of strong light, a simulation model is established, and the suppression effect of the reflective layer is verified.

2013 ◽  
Vol 313-314 ◽  
pp. 666-670 ◽  
Author(s):  
K.J. Suja ◽  
Bhanu Pratap Chaudhary ◽  
Rama Komaragiri

MEMS (Micro Electro Mechanical System) are usually defined as highly miniaturized devices combining both electrical and mechanical components that are fabricated using integrated circuit batch processing techniques. Pressure sensors are usually manufactured using square or circular diaphragms of constant thickness in the order of few microns. In this work, a comparison between circular diaphragm and square diaphragm indicates that square diaphragm has better perspectives. A new method for designing diaphragm of the Piezoresistive pressure sensor for linearity over a wide pressure range (approximately double) is designed, simulated and compared with existing single diaphragm design with respect to diaphragm deflection and sensor output voltage.


2013 ◽  
Vol 771 ◽  
pp. 159-162
Author(s):  
Li Feng Qi ◽  
Zhi Min Liu ◽  
Xing Ye Xu ◽  
Guan Zhong Chen ◽  
Xue Qing

The relative research of low range and high anti-overload piezoresistive pressure sensor is carried out in this paper and a new kind of sensor chip structure, the double ends-four beam structure, is proposed. Trough the analysis, the sensor chip structure designed in this paper has high sensitivity and linearity. The chip structure is specially suit for the micro-pressure sensor. The theoretical analysis and finite element analysis is taken in this paper, which provide important scientific basis for the pressure sensor development.


1999 ◽  
Author(s):  
Chahid K. Ghaddar ◽  
John R. Gilbert

Abstract In this work we conduct a number of finite element simulations using the MEMCAD 5.0 system to evaluate the effect of various geometrical and process parameters on the Wheatstone bridge piezoresistive pressure sensor. In particular, results are presented for the following design parameters: the location of the resistors relative to the diaphragm edge; the angular orientation of the resistors; the planar dimensions of the resistors; and finally, the effects of dopant concentration profile and associated junction depth as computed by the limited-diffusion model.


2020 ◽  
Vol 597 ◽  
pp. 412386
Author(s):  
K. Kumari ◽  
Reeshma R ◽  
D.S. ArunKumar ◽  
Sunil Meti ◽  
M.R. Rahman

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