scholarly journals A Universal Urbach Rule for Disordered Organic Semiconductors

Author(s):  
Christina Kaiser ◽  
Oskar Sandberg ◽  
Nasim Zarrabi ◽  
Wei Li ◽  
Paul Meredith ◽  
...  

Abstract In crystalline semiconductors, the sharpness of the absorption spectrum onset is characterized by temperature-dependent Urbach energies. These energies quantify the static, structural disorder causing localized exponential tail states, and the dynamic disorder due to electron-phonon scattering. The applicability of this exponential-tail model to molecular and amorphous solids has long been debated. Nonetheless, exponential fittings are routinely applied to the analysis of the sub-gap absorption of organic semiconductors alongside Gaussian-like spectral line-shapes predicted by non-adiabatic Marcus theory. Herein, we elucidate the sub-gap spectral line-shapes of organic semiconductors and their blends by temperature-dependent quantum efficiency measurements in photovoltaic structures. We find that the Urbach energy associated with singlet excitons universally equals the thermal energy regardless of static disorder. These observations are consistent with absorption spectra obtained from a convolution of Gaussian density of excitonic states weighted by a Boltzmann factor. A generalized Marcus charge transfer model is presented that explains the absorption spectral line-shape of disordered molecular matrices, and we also provide a simple strategy to determine the excitonic disorder energy. Our findings elaborate the true meaning of the dynamic Urbach energy in molecular solids and deliver a way of relating the photo-physics to static disorder, crucial for optimizing molecular electronic devices such as organic solar cells.

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Christina Kaiser ◽  
Oskar J. Sandberg ◽  
Nasim Zarrabi ◽  
Wei Li ◽  
Paul Meredith ◽  
...  

AbstractIn crystalline semiconductors, absorption onset sharpness is characterized by temperature-dependent Urbach energies. These energies quantify the static, structural disorder causing localized exponential-tail states, and dynamic disorder from electron-phonon scattering. Applicability of this exponential-tail model to disordered solids has been long debated. Nonetheless, exponential fittings are routinely applied to sub-gap absorption analysis of organic semiconductors. Herein, we elucidate the sub-gap spectral line-shapes of organic semiconductors and their blends by temperature-dependent quantum efficiency measurements. We find that sub-gap absorption due to singlet excitons is universally dominated by thermal broadening at low photon energies and the associated Urbach energy equals the thermal energy, regardless of static disorder. This is consistent with absorptions obtained from a convolution of Gaussian density of excitonic states weighted by Boltzmann-like thermally activated optical transitions. A simple model is presented that explains absorption line-shapes of disordered systems, and we also provide a strategy to determine the excitonic disorder energy. Our findings elaborate the meaning of the Urbach energy in molecular solids and relate the photo-physics to static disorder, crucial for optimizing organic solar cells for which we present a revisited radiative open-circuit voltage limit.


1997 ◽  
Vol 478 (1) ◽  
pp. 374-380 ◽  
Author(s):  
Artie P. Hatzes ◽  
William D. Cochran ◽  
Christopher M. Johns‐Krull
Keyword(s):  

Universe ◽  
2021 ◽  
Vol 7 (6) ◽  
pp. 176
Author(s):  
Valery Astapenko ◽  
Andrei Letunov ◽  
Valery Lisitsa

The effect of plasma Coulomb microfied dynamics on spectral line shapes is under consideration. The analytical solution of the problem is unachievable with famous Chandrasekhar–Von-Neumann results up to the present time. The alternative methods are connected with modeling of a real ion Coulomb field dynamics by approximate models. One of the most accurate theories of ions dynamics effect on line shapes in plasmas is the Frequency Fluctuation Model (FFM) tested by the comparison with plasma microfield numerical simulations. The goal of the present paper is to make a detailed comparison of the FFM results with analytical ones for the linear and quadratic Stark effects in different limiting cases. The main problem is connected with perturbation additions laws known to be vector for small particle velocities (static line shapes) and scalar for large velocities (the impact limit). The general solutions for line shapes known in the frame of scalar perturbation additions are used to test the FFM procedure. The difference between “scalar” and “vector” models is demonstrated both for linear and quadratic Stark effects. It is shown that correct transition from static to impact limits for linear Stark-effect needs in account of the dependence of electric field jumping frequency in FFM on the field strengths. However, the constant jumping frequency is quite satisfactory for description of the quadratic Stark-effect. The detailed numerical comparison for spectral line shapes in the frame of both scalar and vector perturbation additions with and without jumping frequency field dependence for the linear and quadratic Stark effects is presented.


Author(s):  
Dorota Zając ◽  
Dariusz Przybylski ◽  
Jadwiga Sołoducho

AbstractDeveloping effective and low‐cost organic semiconductors is an opportunity for the development of organic solar cells (OPV). Herein, we report the molecular design, synthesis and characterization of two molecules with D–A–D–A configuration: 2-cyano-3-(5-(8-(3,4-ethylenodioxythiophen-5-yl)-2,3-diphenylquinoxalin-5-yl)thiophen-2-yl)acrylic acid (6) and 2-cyano-3-(5-(2,3-diphenyl-8-(thiophen-2-yl)quinoxalin-5-yl)thiophen-2-yl)acrylic acid (7). Moreover, we investigated the structural, theoretical and optical properties. The distribution of HOMO/LUMO orbitals and the values of the ionization potential indicate good semiconducting properties of the compounds and that they can be a bipolar material. Also, the optical study show good absorption in visible light (λabs 380–550 nm). We investigate the theoretical optoelectronic properties of obtained compounds as potential materials for solar cells.


Atoms ◽  
2014 ◽  
Vol 2 (3) ◽  
pp. 378-381 ◽  
Author(s):  
Evgeny Stambulchik ◽  
Annette Calisti ◽  
Hyun-Kyung Chung ◽  
Manuel González

2015 ◽  
Vol 115 ◽  
pp. 35-49 ◽  
Author(s):  
Sheng-Yi Shiau ◽  
Chun-Ho Chang ◽  
Wei-Jen Chen ◽  
Hsing-Ju Wang ◽  
Ru-Jong Jeng ◽  
...  

2016 ◽  
Vol 845 ◽  
pp. 224-227 ◽  
Author(s):  
Danila Saranin ◽  
Marina Orlova ◽  
Sergey Didenko ◽  
Oleg Rabinovich ◽  
Andrey Kryukov

This article presents the results of research output voltage characteristics of solar cells on an organic basis with the use of P3HT: PCBM system. There were produced organic solar cells in a coating in air, current-voltage characteristics were measured. It was determined the characteristic influence of a substrate cleaning and annealing temperature of layers applied on fill factor and conversion efficiency.


2006 ◽  
Vol 2 (S238) ◽  
pp. 475-476
Author(s):  
Alexander F. Zakharov

AbstractRecent X-ray observations of microquasars and Seyfert galaxies reveal broad emission lines in their spectra, which can arise in the innermost parts of accretion disks. Recently Müller & Camenzind (2004) classified different types of spectral line shapes and described their origin. Zakharov (2006b) clarified their conclusions about an origin of doubled peaked and double horned line shapes in the framework of a radiating annulus model and discussed s possibility to evaluate black hole parameters analyzing spectral line shapes.


MRS Advances ◽  
2017 ◽  
Vol 2 (23) ◽  
pp. 1249-1257 ◽  
Author(s):  
F. Michael Sawatzki ◽  
Alrun A. Hauke ◽  
Duy Hai Doan ◽  
Peter Formanek ◽  
Daniel Kasemann ◽  
...  

ABSTRACTTo benefit from the many advantages of organic semiconductors like flexibility, transparency, and small thickness, electronic devices should be entirely made from organic materials. This means, additionally to organic LEDs, organic solar cells, and organic sensors, we need organic transistors to amplify, process, and control signals and electrical power. The standard lateral organic field effect transistor (OFET) does not offer the necessary performance for many of these applications. One promising candidate for solving this problem is the vertical organic field effect transistor (VOFET). In addition to the altered structure of the electrodes, the VOFET has one additional part compared to the OFET – the source-insulator. However, the influence of the used material, the size, and geometry of this insulator on the behavior of the transistor has not yet been examined. We investigate key-parameters of the VOFET with different source insulator materials and geometries. We also present transmission electron microscopy (TEM) images of the edge area. Additionally, we investigate the charge transport in such devices using drift-diffusion simulations and the concept of a vertical organic light emitting transistor (VOLET). The VOLET is a VOFET with an embedded OLED. It allows the tracking of the local current density by measuring the light intensity distribution.We show that the insulator material and thickness only have a small influence on the performance, while there is a strong impact by the insulator geometry – mainly the overlap of the insulator into the channel. By tuning this overlap, on/off-ratios of 9x105 without contact doping are possible.


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