Fabrication and Characterization of InP-Based Quantum Cascade Distributed Feedback Lasers with Inductively Coupled Plasma Etched Lateral Gratings

2007 ◽  
Vol 46 (4B) ◽  
pp. 2424-2428 ◽  
Author(s):  
Kenneth Kennedy ◽  
Dmitry G. Revin ◽  
Andrey B. Krysa ◽  
Kristian M. Groom ◽  
Luke R. Wilson ◽  
...  
2020 ◽  
Author(s):  
Jing Ma ◽  
Yongqiang Zhao ◽  
Wen Liu ◽  
Fuhua Yang ◽  
Xiaodong Wang

Abstract GaAs nanostructures has attracted more and more attention due to its excellent properties such as increasing photon absorption. The fabrication process on GaAs substrate were rarely reported and most of the preparation processes are complex. Here, we reported a black GaAs fabrication process using a simple Inductively coupled plasma (ICP) etching process,with no extra lithography process. The fabricated sample has a low Reflectance value,close to zero. Besides, the black GaAs also displayed hydrophobic property, with a water contact angle (CA) of 125°. This kind of black GaAs etching process could be added to the fabrication workflow of photodetectors and solar cell devices to further improve their characteristics.


2014 ◽  
Vol 29 (6) ◽  
pp. 1132-1137 ◽  
Author(s):  
Lucia D'Ulivo ◽  
Lu Yang ◽  
Yong-Lai Feng ◽  
John Murimboh ◽  
Zoltán Mester

Accurate quantitation and characterization of organometals are successfully achieved by splitting the gas chromatography (GC) flow to both an electron ionization mass spectrometer (EIMS) and an inductively coupled plasma mass spectrometer (ICPMS).


1999 ◽  
Vol 75 (5) ◽  
pp. 665-667 ◽  
Author(s):  
Daniel Hofstetter ◽  
Jérôme Faist ◽  
Mattias Beck ◽  
Antoine Müller ◽  
Ursula Oesterle

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