scholarly journals Novel synthesis, characterization and TDD-DFT computations for ZrO2-bromothymol blue nanocomposite thin film [ZrO2+BTB]C and its application

Author(s):  
Ahmed F. Al-Hossainy ◽  
Mohamed Sh. Zoromba

Abstract A novel [ZrO2 + BTB]C nanocomposite was synthesized and prepared as a thin film using the Sol-Gel spin coating method. Different characterization techniques for [ZrO2 + BTB]C like FTIR, UV-Vis, and optical properties have been used. The resulted XRD and SEM data have been employed to study interface composites. The optimization was performed using DFT by DMol3 and CASTEP program. The chemical structure was confirmed by spectroscopic and structural properties for [ZrO2-BTB]C, XRD results showed the same crystal structure. Combined between experimental and TDD-DFT data, the average crystallite size and composite interface are 12.36 nm and orthorhombic symmetry (a = 7.38(5); b = 18.178(6); c = 26.10(3) Å and a = b = g = 90o) with space group (P61) for [ZrO2 + BTB]C, respectively. Furthermore. While the computed by DFT are 2.897 eV and 2.492 eV for as-isolated crystals of [BTB]TF and [ZrO2 + BTB]C, respectively. Both [BTB]TF and [ZrO2 + BTB]C thin films have direct allowed transitions. In addition, the optoelectrical parameters have been calculated for [BTB]TF and [ZrO2 + BTB]C films such as refractive index, extinction coefficient, dielectric constant, and optical conductivity. The simulated values obtained by CATSTEP for the optical parameters of [ZrO2 + BTB]C are in good agreement with the experimental values. The [ZrO2 + BTB]C presents a good candidate for optoelectronics and solar cell applications.

2006 ◽  
Vol 317-318 ◽  
pp. 807-810 ◽  
Author(s):  
Chang Yeoul Kim ◽  
Jin Wook Choi ◽  
Tae Yeoung Lim ◽  
Duck Kyun Choi

Electrochromic WO3 thin film was prepared by using tungsten metal solution in hydrogen peroxide as a starting solution and by sol-gel dip coating method. XRD pattern showed that tungsten oxide crystal phase formed at 400. In the view of electrochemical property, WO3 thin film which was heat-treated at 300 and was amorphous had better than that of the crystalline phase.


2019 ◽  
Vol 61 (1) ◽  
pp. 64-70
Author(s):  
Said Benramache

AbstractWe investigated the structural and optical properties of zinc oxide (ZnO) thin film as the n-type semiconductor. In this work, the sol–gel method used to fabricate ZnO thin film on glass substrate with 0.5 mol/l of zinc acetate dehydrates. The crystals quality of the thin film analyzed by X-ray diffraction and the optical transmittance was carried out by an ultraviolet-visible spectrophotometer. The DRX analyses indicated that ZnO film have polycrystalline nature and hexagonal wurtzite structure with (002) preferential orientation and the measured average crystallite size of ZnO of 207.9 nm. The thin film exhibit average optical transparency about 90 %, in the visible region, found that optical band gap energy was 3.282 eV, the Urbach energy also was calculated from optical transmittance to optimal value is 196.7 meV.


2015 ◽  
Vol 1131 ◽  
pp. 237-241 ◽  
Author(s):  
Akkarat Wongkaew ◽  
Chanida Soontornkallapaki ◽  
Naritsara Amhae ◽  
Wichet Lamai

This work aims to study the effect of ZnO containing in TiO2/SiO2 film on the superhydrophilic property after exposed to different types of light. The metal solutions were prepared by sol-gel technique and the film was deposited on glass slides by dip coating method. The parameter studied was the amount of ZnO in the TiO2/SiO2 film. The contents of ZnO were 5-20% weight (increased by 5%). The amount of TiO2 was constant at 30% weight. The obtained films were analyzed for their roughness. The results indicated that film roughness changed according to the ZnO contents. With 5%ZnO in the thin film, the roughness was 0.726 nm while 20%ZnO obtained the roughness of 2.128 nm. UV-Vis spectrophotometer was used for measuring of transmittance of films. At wavelength of 550 nm, the transmittances of each film were greater than 90%. Band gap energy of each film was calculated from the transmittance data. It was found that the average band gap energy of the films was 2.47 eV. Then, the films contained various amount of ZnO were grouped into 2 sets. The first set was exposed to visible light while the other set was exposed to UV. The duration of exposure was 5 hr. Both sets of films after exposed to any light were kept in a black box controlled relative humidity of 85%. Each film was measured contact angle every day. It was found that the 30%TiO2/5%Zn/SiO2 film exposed to visible light showed the best superhydrophilic property. The contact angle was about 0-5° within 3 days. This may due to the reduction of band gap energy in the presence of ZnO in TiO2/SiO2 films to 2.41 eV and the roughness of the film.


2009 ◽  
Author(s):  
M. H. Mamat ◽  
M. Z. Sahdan ◽  
S. Amizam ◽  
H. A. Rafaie ◽  
Z. Khusaimi ◽  
...  

2007 ◽  
Vol 336-338 ◽  
pp. 585-588 ◽  
Author(s):  
Dao Qi Xue ◽  
Jun Ying Zhang ◽  
Hai Bing Feng ◽  
Tian Min Wang

ZnO:Eu3+ films were obtained by dip-coating method and influence of heat treatment on luminescent properties was investigated. Emission and excitation spectra revealed that the organic and nitrate molecules, which adhered on the surface of films when the samples were treated at lower temperatures (300oC-400oC), played an important role on the luminescent properties. At higher temperatures (500oC-800oC), the luminescence spectra of ZnO and Eu3+ were quite different with those treated at lower temperatures. Energy transferred from ZnO host to Eu3+ was obviously observed in the emission and excitation spectra. The luminescence mechanism was discussed briefly.


2007 ◽  
Vol 544-545 ◽  
pp. 1081-1084 ◽  
Author(s):  
Chang Yeoul Kim ◽  
Seong Geun Cho ◽  
Seok Park ◽  
Tae Yeoung Lim ◽  
Duck Kyun Choi

Electrochromic WO3 thin film was prepared by using tungsten metal solution in hydrogen peroxide as a starting solution and by a sol-gel dip coating method. The thermal analysis was conducted by DSC/TG method. A DSC/TG analysis and the XRD patterns showed that a tungsten oxide crystal phase was formed at 400oC. WO3 thin film when heat-treated at 300oC was amorphous and had a better electrochemical property than that of the crystalline phase. Crystallization of tungsten oxide decreased active sites of ion intercalation so that the current density decreased with heat-treatment temperature.


2018 ◽  
Vol 9 (4) ◽  
pp. 777-782 ◽  
Author(s):  
Rupeshkumar V. Ramani ◽  
Bharat M. Ramani ◽  
Anjana D. Saparia ◽  
Chirag Savaliya ◽  
K.N. Rathod ◽  
...  

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