scholarly journals Fabrication and Characterisation of ZnO Thin Film by Sol–Gel Technique

2019 ◽  
Vol 61 (1) ◽  
pp. 64-70
Author(s):  
Said Benramache

AbstractWe investigated the structural and optical properties of zinc oxide (ZnO) thin film as the n-type semiconductor. In this work, the sol–gel method used to fabricate ZnO thin film on glass substrate with 0.5 mol/l of zinc acetate dehydrates. The crystals quality of the thin film analyzed by X-ray diffraction and the optical transmittance was carried out by an ultraviolet-visible spectrophotometer. The DRX analyses indicated that ZnO film have polycrystalline nature and hexagonal wurtzite structure with (002) preferential orientation and the measured average crystallite size of ZnO of 207.9 nm. The thin film exhibit average optical transparency about 90 %, in the visible region, found that optical band gap energy was 3.282 eV, the Urbach energy also was calculated from optical transmittance to optimal value is 196.7 meV.

2014 ◽  
Vol 2014 ◽  
pp. 1-8 ◽  
Author(s):  
I. Saurdi ◽  
M. H. Mamat ◽  
M. F. Malek ◽  
M. Rusop

Aligned ZnO Nanorod arrays are deposited on the Sn-doped ZnO thin film via sonicated sol-gel immersion method. The structural, optical, and electrical properties of the Sn-doped ZnO thin films were investigated. Results show that the Sn-doped ZnO thin films with small grain size (~20 nm), high average transmittance (96%) in visible region, and good resistivity7.7 × 102 Ω·cm are obtained for 2 at.% Sn doping concentration. The aligned ZnO nanorod arrays with large surface area were also obtained for 2 at.% Sn-doped ZnO thin film. They were grown on sol-gel derived Sn-doped ZnO thin film, which acts as a seed layer, via sonicated sol-gel immersion method. The grown aligned ZnO nanorod arrays show high transmittance at visible region. The fabricated dye-sensitised solar cell based on the 2.0 at.% Sn-doped ZnO thin film with aligned ZnO nanorod arrays exhibits improved current density, open-circuit voltage, fill factor, and conversion efficiency compared with the undoped ZnO and 1 at.% Sn-doped ZnO thin films.


2016 ◽  
Vol 1133 ◽  
pp. 424-428 ◽  
Author(s):  
Norhidayah Che Ani ◽  
Mohd Zainizan Sahdan ◽  
Nayan Nafarizal ◽  
Siti Nooraya Mohd Tawil

Thin films of undoped and gadolinium-doped zinc oxide (Gd-doped ZnO) with different Gd concentration (1-8 at. %) were deposited onto a glass substrate by sol–gel spin-coating technique. X-ray diffraction (XRD, Bruker D8 Advance) studies confirmed the nature of the films as polycrystalline, with typical hexagonal wurtzite structure. The film also showed variation in crystallite size and change in relative intensities, upon different Gd concentrations. Besides, the influence of Gd concentration on the optical transmittance of ZnO films was studied using ultraviolet-visible spectrophotometer (UV-Vis, Shimadzu UV 1800) in the wavelength range 300-800 nm. The optical transmittance of all films is higher than ~95% in the visible region, and doped films become more transparent. The electrical resistance was measured by two point probe (Keithley-2400). The resistance decrease with increasing Gd concentration up to 2 at.% and it increased for further increase Gd concentrations.


2019 ◽  
Vol 56 ◽  
pp. 152-157 ◽  
Author(s):  
Abdelouahab Noua ◽  
Hichem Farh ◽  
Rebai Guemini ◽  
Oussama Zaoui ◽  
Tarek Diab Ounis ◽  
...  

Nickel oxide (NiO) thin films were successfully deposited by sol-gel dip-coating method on glass substrates. The structural, morphological and optical properties in addition to the photocatalytic activity of the prepared films were investigated. The results show that the films have a polycrystalline NiO cubic structure with dense NiO grains and average optical transmittance in the visible region. The photocatalytic properties of the films were studied through the degradation of methylene blue and 89% of degradation was achieved for 4.5h of solar light irradiation exposure which indicates the capability of NiO photocatalytic activity.


2019 ◽  
Vol 28 (2) ◽  
pp. 427-434
Author(s):  
Amanpal C. Singh ◽  
Parmod Kumar Khanna ◽  
Anuj Kumar ◽  
Mukesh Kumar ◽  
Dinesh Kumar

2019 ◽  
Vol 6 (11) ◽  
pp. 115901 ◽  
Author(s):  
Fucheng Yu ◽  
Tianyun Song ◽  
Bolong Wang ◽  
Boyu Xu ◽  
Haishan Li ◽  
...  

2015 ◽  
Vol 1131 ◽  
pp. 237-241 ◽  
Author(s):  
Akkarat Wongkaew ◽  
Chanida Soontornkallapaki ◽  
Naritsara Amhae ◽  
Wichet Lamai

This work aims to study the effect of ZnO containing in TiO2/SiO2 film on the superhydrophilic property after exposed to different types of light. The metal solutions were prepared by sol-gel technique and the film was deposited on glass slides by dip coating method. The parameter studied was the amount of ZnO in the TiO2/SiO2 film. The contents of ZnO were 5-20% weight (increased by 5%). The amount of TiO2 was constant at 30% weight. The obtained films were analyzed for their roughness. The results indicated that film roughness changed according to the ZnO contents. With 5%ZnO in the thin film, the roughness was 0.726 nm while 20%ZnO obtained the roughness of 2.128 nm. UV-Vis spectrophotometer was used for measuring of transmittance of films. At wavelength of 550 nm, the transmittances of each film were greater than 90%. Band gap energy of each film was calculated from the transmittance data. It was found that the average band gap energy of the films was 2.47 eV. Then, the films contained various amount of ZnO were grouped into 2 sets. The first set was exposed to visible light while the other set was exposed to UV. The duration of exposure was 5 hr. Both sets of films after exposed to any light were kept in a black box controlled relative humidity of 85%. Each film was measured contact angle every day. It was found that the 30%TiO2/5%Zn/SiO2 film exposed to visible light showed the best superhydrophilic property. The contact angle was about 0-5° within 3 days. This may due to the reduction of band gap energy in the presence of ZnO in TiO2/SiO2 films to 2.41 eV and the roughness of the film.


2009 ◽  
Author(s):  
M. H. Mamat ◽  
M. Z. Sahdan ◽  
S. Amizam ◽  
H. A. Rafaie ◽  
Z. Khusaimi ◽  
...  

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