Effect of ZnO on a Superhydrophilic Self-Cleaning Properties of TiO2/SiO2 Thin Film on Glass Slide Substrate

2015 ◽  
Vol 1131 ◽  
pp. 237-241 ◽  
Author(s):  
Akkarat Wongkaew ◽  
Chanida Soontornkallapaki ◽  
Naritsara Amhae ◽  
Wichet Lamai
Keyword(s):  
Thin Film ◽  
Contact Angle ◽  
Visible Light ◽  
Band Gap ◽  
Sol Gel ◽  
Dip Coating ◽  
Band Gap Energy ◽  
Gap Energy ◽  
Coating Method ◽  
Dip Coating Method

This work aims to study the effect of ZnO containing in TiO2/SiO2 film on the superhydrophilic property after exposed to different types of light. The metal solutions were prepared by sol-gel technique and the film was deposited on glass slides by dip coating method. The parameter studied was the amount of ZnO in the TiO2/SiO2 film. The contents of ZnO were 5-20% weight (increased by 5%). The amount of TiO2 was constant at 30% weight. The obtained films were analyzed for their roughness. The results indicated that film roughness changed according to the ZnO contents. With 5%ZnO in the thin film, the roughness was 0.726 nm while 20%ZnO obtained the roughness of 2.128 nm. UV-Vis spectrophotometer was used for measuring of transmittance of films. At wavelength of 550 nm, the transmittances of each film were greater than 90%. Band gap energy of each film was calculated from the transmittance data. It was found that the average band gap energy of the films was 2.47 eV. Then, the films contained various amount of ZnO were grouped into 2 sets. The first set was exposed to visible light while the other set was exposed to UV. The duration of exposure was 5 hr. Both sets of films after exposed to any light were kept in a black box controlled relative humidity of 85%. Each film was measured contact angle every day. It was found that the 30%TiO2/5%Zn/SiO2 film exposed to visible light showed the best superhydrophilic property. The contact angle was about 0-5° within 3 days. This may due to the reduction of band gap energy in the presence of ZnO in TiO2/SiO2 films to 2.41 eV and the roughness of the film.

Synthesis of WO3 Electrochromic Sensor by Sol-Gel Method and Characterization of Its Electrochemical and Optical Properties

2006 ◽  
Vol 317-318 ◽  
pp. 807-810 ◽  
Author(s):  
Chang Yeoul Kim ◽  
Jin Wook Choi ◽  
Tae Yeoung Lim ◽  
Duck Kyun Choi
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Dip Coating ◽  
Xrd Pattern ◽  
Starting Solution ◽  
Oxide Crystal ◽  
Heat Treated ◽  
Coating Method ◽  
Dip Coating Method

Electrochromic WO3 thin film was prepared by using tungsten metal solution in hydrogen peroxide as a starting solution and by sol-gel dip coating method. XRD pattern showed that tungsten oxide crystal phase formed at 400. In the view of electrochemical property, WO3 thin film which was heat-treated at 300 and was amorphous had better than that of the crystalline phase.

Preparation and Characterization of ZnO Thin Film Doped with Eu via Sol-Gel Method

2007 ◽  
Vol 336-338 ◽  
pp. 585-588 ◽  
Author(s):  
Dao Qi Xue ◽  
Jun Ying Zhang ◽  
Hai Bing Feng ◽  
Tian Min Wang
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Luminescent Properties ◽  
Dip Coating ◽  
Luminescence Spectra ◽  
Zno Thin Film ◽  
Excitation Spectra ◽  
Coating Method ◽  
Dip Coating Method

ZnO:Eu3+ films were obtained by dip-coating method and influence of heat treatment on luminescent properties was investigated. Emission and excitation spectra revealed that the organic and nitrate molecules, which adhered on the surface of films when the samples were treated at lower temperatures (300oC-400oC), played an important role on the luminescent properties. At higher temperatures (500oC-800oC), the luminescence spectra of ZnO and Eu3+ were quite different with those treated at lower temperatures. Energy transferred from ZnO host to Eu3+ was obviously observed in the emission and excitation spectra. The luminescence mechanism was discussed briefly.

N-Loaded TiO2 for Photocatalytic Degradation of Methyl Orange under Visible Light Irradiation

2012 ◽  
Vol 622-623 ◽  
pp. 883-888
Author(s):  
Natkritta Boonprakob ◽  
Natda Wetchakun ◽  
Sukon Phanichphant ◽  
Jun Chen ◽  
Burapat Inceesungvorn
Keyword(s):  
Methyl Orange ◽  
Visible Light ◽  
Band Gap ◽  
Visible Light Irradiation ◽  
Sol Gel ◽  
Band Gap Energy ◽  
Light Irradiation ◽  
Gap Energy ◽  
Visible Light Driven ◽  
Degradation Of Methyl Orange

Nitrogen-loaded TiO2(N-loaded TiO2), a visible-light driven catalyst, was successfully synthesized by the modified sol-gel method. Physical characterizations of the as-prepared catalysts have been performed by using X-ray diffraction (XRD), Diffuse reflectance UVvisspectroscopy(DRUVvis), Raman spectroscopyand BETspecific surface areain order to obtain structure-activity relationship. Results from Raman spectroscopy clearly suggested that N atoms were incorporated into the TiO2crystal lattice as evidenced by the vibrational peak of TiN in TiO2-xNx.DR UVvis results also suggested that the nitrogen dopant might be responsible for narrowing the TiO2band gap energy, thus resulting in a shift towards the visiblelight region. Photocatalytic activity of N-loaded TiO2evaluated through the degradation of methyl orange (MO)under visible light irradiation (l> 400 nm) indicated that all N-loaded photocatalysts exhibited significantly higher activities than the unloaded TiO2and Degussa P25 TiO2. According to the results from DR UV-vis, XRD and BET studies, the enhanced photoactivity observed from N-loaded samples might be due to a decrease in TiO2band gap energy and/or changes in chemical and physical properties of the materials upon loading with nitrogen.

Electrochemical and Optical Properties of WO3 Prepared by Sol-Gel Coating

2007 ◽  
Vol 544-545 ◽  
pp. 1081-1084 ◽  
Author(s):  
Chang Yeoul Kim ◽  
Seong Geun Cho ◽  
Seok Park ◽  
Tae Yeoung Lim ◽  
Duck Kyun Choi
Keyword(s):  
Thin Film ◽  
Tungsten Oxide ◽  
Active Sites ◽  
Sol Gel ◽  
Dip Coating ◽  
Treatment Temperature ◽  
Starting Solution ◽  
Coating Method ◽  
Dip Coating Method ◽  
Xrd Patterns

Electrochromic WO3 thin film was prepared by using tungsten metal solution in hydrogen peroxide as a starting solution and by a sol-gel dip coating method. The thermal analysis was conducted by DSC/TG method. A DSC/TG analysis and the XRD patterns showed that a tungsten oxide crystal phase was formed at 400oC. WO3 thin film when heat-treated at 300oC was amorphous and had a better electrochemical property than that of the crystalline phase. Crystallization of tungsten oxide decreased active sites of ion intercalation so that the current density decreased with heat-treatment temperature.

scholarly journals Cr–ZnO nanostructured thin film coating on borosilicate glass by cost effective sol–gel dip coating method

2018 ◽  
Vol 9 (4) ◽  
pp. 777-782 ◽  
Author(s):  
Rupeshkumar V. Ramani ◽  
Bharat M. Ramani ◽  
Anjana D. Saparia ◽  
Chirag Savaliya ◽  
K.N. Rathod ◽  
...  
Keyword(s):  
Thin Film ◽  
Borosilicate Glass ◽  
Sol Gel ◽  
Cost Effective ◽  
Film Coating ◽  
Dip Coating ◽  
Thin Film Coating ◽  
Nanostructured Thin Film ◽  
Coating Method ◽  
Dip Coating Method

Degradasi Gas Benzena Melalui Proses Pemangkinanfoto Saput Tipis TiO2

2012 ◽  
Author(s):  
Wan Azelee Wan Abu Bakar ◽  
Mohd Yusof Othman ◽  
Noor Khaida Wati Mohd Saiyudi ◽  
Keiichi Tanaka
Keyword(s):  
Thin Film ◽  
Light Source ◽  
Tio2 Thin Film ◽  
Uv Light ◽  
Wave Length ◽  
Sol Gel ◽  
Dip Coating ◽  
Optimum Ratio ◽  
Coating Method ◽  
Dip Coating Method

Pengoksidaanfoto benzena fasa gas menggunakan saput tipis TiO2 yang disinari lampu ultralembayung telah dikaji. Saput tipis ini disediakan melalui kaedah celup angkat menggunakan sol–gel TiO2. Tindak balas yang sama juga telah dijalankan menggunakan saput tipis TiO2 yang didop dengan Cu2+ dan Fe3+ dengan nisbah mol TiO2 terhadap ion logam 1:0.005, 1:0.001, 1:0.0005 dan 1:0.0003. Hasil kajian menunjukkan mangkin TiO2 dengan pancaran cahaya UV (354 nm) mendegradasikan gas benzena sebanyak 90% dalam masa 55 minit. Walau bagaimanapun penambahan ion Fe3+ dengan nisbah 1:0.0005 meningkatkan peratusan degradasi benzena kepada 98% dalam masa 55 minit, sebaliknya penambahan Cu2+memberikan kesan negatif kepada aktiviti foto TiO2. Kajian juga memperoleh satu nilai optimum dengan aktiviti pemangkinan adalah tertinggi bagi kedua-dua ion Fe3+ dan Cu2+. Pengaruh panjang gelombang cahaya ke atas aktiviti foto TiO2 juga telah dikaji dengan menggunakan mangkin TiO2 dop Fe3+ dengan nisbah optimum. Hasil kajian menunjukkan bahawa degradasi gas benzena meningkat dengan pengurangan tenaga cahaya yang dipancarkan. Kata kunci: Pemangkinanfoto; pengoksidaanfoto; saput tipis; TiO2 The gas phase photooxidation of benzene was investigated using TiO2 thin film irradiated with UV light source. The thin film was prepared via TiO2 sol gel dip coating method. The same reaction was also carried out using TiO2 doped with Cu2+ and Fe3+ with 1:0.005, 1:0.001, 1:0.0005 and 1:0.0003 mole ratios. The results showed that 90% of benzene was degraded after 55 minutes UV (354 nm) irradiation of the TiO2 thin film. However the addition of Fe3+ ions with 1:0.0005 mole ratio degraded 98% of benzene within 55 minutes. In contrast, Cu2+ ions however give a detrimental effect to the photoactivity of TiO2. An optimum ratio of dopant, where TiO2 showed the highest activity, was determined for both Fe3+ and Cu2+. The effect of different wave-length light source was also carried out using TiO2 doped Fe3+ with optimum ratio. The degradation of benzene was found to increase with decreasing light energy. Key words: Photocatalysis; photooxidation; TiO2 thin film

Photocatalytic and Self-Cleaning Properties of TiO2-Cu Thin Films on Glass Substrate

2012 ◽  
Vol 152-154 ◽  
pp. 409-413 ◽  
Author(s):  
Weerachai Sangchay ◽  
Lek Sikong ◽  
Kalayanee Kooptarnond
Keyword(s):  
Thin Films ◽  
Contact Angle ◽  
Uv Irradiation ◽  
Sol Gel ◽  
Dip Coating ◽  
Glass Slides ◽  
Coating Method ◽  
Small Contact Angle ◽  
Self Cleaning ◽  
Dip Coating Method

TiO2-Cu thin films containing 0 to 1%Cu coated on glass slides were prepared by sol gel-dip coating method. The prepared thin films were synthesized at the temperature of 400 ◦C for 2 h with a heating rate of 10◦C/min. The microstructures of synthesized TiO2-Cu thin films were characterized by XRD, FT-IR and SEM. The photocatalytic activities of TiO-2Cu thin films were tested using methylene blue (MB) solution under UV irradiation. Finally, the self-cleaning property was evaluated by means of contact angle of water droplet on the films. The results show all samples have the thickness in range of 1 um and surfaces are dense with a large surface area. It can be noted that TiO2-1.0Cu thin films were found to give the highest photocatalytic efficiency and exhibited self-cleaning effect (small contact angle, 17°) under UV irradiation.

scholarly journals Preparation and Characterization of Sol-Gel Dip Coated Al: ZnO (AZO) Thin Film for Opto-electronic Application

2019 ◽  
Vol 53 (4) ◽  
pp. 467
Author(s):  
K. Deva Arun Kumar ◽  
S. Valanarasu ◽  
S. Rex Rosario
Keyword(s):  
Thin Film ◽  
Sol Gel ◽  
Hexagonal Wurtzite Structure ◽  
Hall Effect Measurement ◽  
Dip Coating ◽  
Visible Range ◽  
Uv Emission ◽  
Azo Thin Film ◽  
Coating Method ◽  
Dip Coating Method

AbstractAluminum doped zinc oxide (AZO) thin film was prepared by sol–gel dip coating method from methanol and monoethanolamine respectively, used as solvent and stabilizer agent. From the XRD study, it was confirmed that the aluminum was incorporated into the ZnO lattice. The prepared film have polycrystalline in nature and the film exhibit hexagonal wurtzite structure with (002) direction. SEM and AFM studies showed well defined smooth and uniformed wrinkle shaped grains distributed regularly on to the entire glass substrate without any pinholes and cracks. From the optical study, the observed highest transmittance was about 82% in the visible range and the band gap is 3.15 eV. Room temperature PL spectra exhibited a strong UV emission peak located at 390 nm for the deposited film. The electrical properties of the AZO thin film was studied by Hall-Effect measurement and found that it has n-type conductivity with low resistivity (ρ) of about 9.06 × 10^–3 Ω cm.

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