Thru-Hole Epitaxy: Is Remote Epitaxy Really Remote?

Abstract The remote epitaxy was originally proposed to grow a film, which is not in contact but crystallographically aligned with a substrate and easily detachable due to a van der Waals material as a space layer. Here we show that the claimed remote epitaxy is more likely to be nonremote ‘thru-hole’ epitaxy. On a substrate with thick and symmetrically incompatible van der Waals space layer or even with a three-dimensional amorphous oxide film in-between, we demonstratively grew GaN domains through thru-holes via connectedness-initiated epitaxial lateral overgrowth, not only readily detachable but also crystallographically aligned with a substrate. Our proposed nonremote thru-hole epitaxy, which is embarrassingly straightforward and undemanding, can provide wider applicability of the benefits known to be only available by the claimed remote epitaxy.

Download Full-text

Thru-Hole Epitaxy: Is Remote Epitaxy Really Remote?

10.21203/rs.3.rs-604787/v1 ◽

2021 ◽

Author(s):

Dongsoo Jang ◽

Chulwoo Ahn ◽

Youngjun Lee ◽

Seungjun Lee ◽

Hyunkyu Lee ◽

...

Keyword(s):

Oxide Film ◽

Van Der Waals ◽

Three Dimensional ◽

Epitaxial Lateral Overgrowth ◽

Space Layer ◽

Amorphous Oxide ◽

Lateral Overgrowth

Abstract The remote epitaxy was originally proposed to grow a film, which is not in contact but crystallographically aligned with a substrate and easily detachable due to a van der Waals material as a space layer. Here we show that the claimed remote epitaxy is more likely to be nonremote `thru-hole' epitaxy. On a substrate with thick and symmetrically incompatible van der Waals space layer or even with a three-dimensional amorphous oxide film in-between, we demonstratively grew GaN domains through thru-holes via connectedness-initiated epitaxial lateral overgrowth, not only readily detachable but also crystallographically aligned with a substrate. Our proposed nonremote thru-hole epitaxy, which is embarrassingly straightforward and undemanding, can provide wider applicability of the benefits known to be only available by the claimed remote epitaxy.

Download Full-text

Fabrication of a Micron-Scale Three-Dimensional Single Crystal Diamond Channel Using a Micro-Jet Water-Assisted Laser

Materials ◽

10.3390/ma14113006 ◽

2021 ◽

Vol 14 (11) ◽

pp. 3006

Author(s):

Qiang Wei ◽

Xiaofan Zhang ◽

Fang Lin ◽

Ruozheng Wang ◽

Genqiang Chen ◽

...

Keyword(s):

Single Crystal ◽

Cross Sections ◽

Microwave Plasma ◽

Three Dimensional ◽

Chemical Vapor ◽

Optical Microscope ◽

Epitaxial Lateral Overgrowth ◽

Plasma Chemical Vapor Deposition ◽

Lateral Overgrowth ◽

Single Crystal Diamond

Two types of a trench with conventional vertical and new reverse-V-shaped cross-sections were fabricated on single crystal diamond (SCD) substrate using a micro-jet water-assisted laser. In addition, a microwave plasma chemical vapor deposition device was used to produce multiple micrometer-sized channels using the epitaxial lateral overgrowth technique. Raman and SEM methods were applied to analyze both types of growth layer characterization. The hollowness of the microchannels was measured using an optical microscope. According to the findings, the epitaxial lateral overgrowth layer of the novel reverse-V-shaped trench produced improved SCD surface morphology and crystal quality.

Download Full-text

Three dimensional devices fabricated by silicon epitaxial lateral overgrowth

Journal of Electronic Materials ◽

10.1007/bf02651990 ◽

1990 ◽

Vol 19 (10) ◽

pp. 1111-1117 ◽

Cited By ~ 16

Author(s):

G. W. Neudeck ◽

P. J. Schubert ◽

J. L. Glenn ◽

J. A. Friedrich ◽

W. A. Klaasen ◽

...

Keyword(s):

Three Dimensional ◽

Epitaxial Lateral Overgrowth ◽

Lateral Overgrowth

Download Full-text

AlxGa1−xN GROWTH BY Si/N TREATMENT OF SAPPHIRE SUBSTRATE: COMPARISON WITH OTHERS GROWTH TECHNIQUES

Surface Review and Letters ◽

10.1142/s0218625x19501166 ◽

2019 ◽

Vol 27 (03) ◽

pp. 1950116

Author(s):

I. HALIDOU ◽

A. TOURÉ ◽

B. EL JANI

Keyword(s):

Sapphire Substrate ◽

Three Dimensional ◽

Epitaxial Lateral Overgrowth ◽

Treatment Technique ◽

X Ray Diffraction ◽

Sem Images ◽

Nucleation Layer ◽

Lateral Overgrowth ◽

N Treatment

AlxGa[Formula: see text]N films were grown on Si/N-treated sapphire substrate by atmospheric pressure metalorganic vapor phase epitaxy (AP-MOVPE) in a home-made vertical reactor. This process can be considered as randomly in situ epitaxial lateral overgrowth (ELO) technology. The growth firstly begins by three-dimensional (3D) mode and is completed in two-dimensional (2D) growth mode as shown by real time in situ laser [Formula: see text][Formula: see text]nm[Formula: see text] reflectometry measurements and confirmed by scanning electron microscopy (SEM) images. Secondary ion mass spectroscopy (SIMS) measurements evidence Al composition pulling effect in the AlxGa[Formula: see text]N layer. The Si/N treatment technique is compared to conventional AlxGa[Formula: see text]N growth techniques. The results of high-resolution X-ray diffraction (HRXRD), photoluminescence (PL) measurements and SEM images agree well on the fact that the Si/N treatment produces AlxGa[Formula: see text]N layers with comparable qualities of AlxGa[Formula: see text]N layers grown on high temperature GaN template but with much higher qualities than AlxGa[Formula: see text]N layers grown on low temperature AlN nucleation layer. Moreover, the Si/N treatment technique permits the growth of high quality AlxGa[Formula: see text]N layers with appreciable thicknesses with respect to the others techniques.

Download Full-text

Electrically driven, highly efficient three-dimensional GaN-based light emitting diodes fabricated by self-aligned twofold epitaxial lateral overgrowth

Scientific Reports ◽

10.1038/s41598-017-10086-7 ◽

2017 ◽

Vol 7 (1) ◽

Cited By ~ 1

Author(s):

Yang-Seok Yoo ◽

Hyun Gyu Song ◽

Min-Ho Jang ◽

Sang-Won Lee ◽

Yong-Hoon Cho

Keyword(s):

Light Emitting Diodes ◽

Three Dimensional ◽

Epitaxial Lateral Overgrowth ◽

Light Emitting ◽

Highly Efficient ◽

Lateral Overgrowth

Download Full-text

Study of ELOG GaN for Application in the Fabrication of Micro-channels for Optoelectronic Devices

MRS Proceedings ◽

10.1557/proc-0892-ff26-08 ◽

2005 ◽

Vol 892 ◽

Author(s):

Lee E Rodak ◽

N J Berry Ann ◽

Kalyan Reddy Kasarla ◽

Nanying Yang ◽

D Korakakis

Keyword(s):

Three Dimensional ◽

Wide Band ◽

Epitaxial Lateral Overgrowth ◽

Wide Band Gap ◽

Lateral Overgrowth ◽

Micro Channels ◽

Lateral Growth Rate ◽

Technical Effort ◽

Novel Devices

AbstractGallium Nitride (GaN) is a promising wide band gap semiconductor material for many optoelectronic applications, especially in the near UV range. Over the past several years, an extensive technical effort has been focused on improving the quality of GaN films through various overgrowth techniques such as epitaxial lateral overgrowth (ELOG), facet controlled epitaxial lateral overgrowth (FACELO), and Pendeoepitaxy. ELOG has been shown to reduce the density of threading dislocations by up to five orders of magnitude [1], however a complete physical model describing lateral overgrowth is needed in order to take full advantage of the process. A lateral overgrowth model will allow for the design and fabrication of three dimensional structures that can lead to novel devices and also to efficient biosensors by integrating micro and nano channels on the same chip as the optoelectronic components.A two-step process has been used to successfully control the geometry of overgrown GaN. Conditions have been identified which give a reduced lateral growth rate, in order to allow expansion of the {112n} plane to form vertical sidewalls and for the design of channel width. These geometries are being examined for possible application in laser diode and micro-channel fabrication for integrating bio-agent detection modules.

Download Full-text

Fabrication of Micron Scale Three-Dimensional Single Crystal Diamond Channel: by Micro-Jet Water-Assist Laser

10.20944/preprints202104.0563.v1 ◽

2021 ◽

Author(s):

Qiang Wei ◽

Xiaofan Zhang ◽

Fang Lin ◽

Ruozheng Wang ◽

Genqiang Chen ◽

...

Keyword(s):

Microwave Plasma ◽

Three Dimensional ◽

Chemical Vapor ◽

Optical Microscope ◽

Epitaxial Lateral Overgrowth ◽

Plasma Chemical ◽

Plasma Chemical Vapor Deposition ◽

Lateral Overgrowth ◽

Single Crystal Diamond ◽

Micrometer Size

Two types of trenches cross-section in conventional vertical and brand new reverse-V-shape have fabricated on SCD substrate by micro-jet water-assist laser, the epitaxial lateral overgrowth technique has applied by microwave plasma chemical vapor deposition system in forming multiple micrometer-size channels. Raman and SEM techniques have applied in analyze both types growth layer characterization. Optical microscope has used to test microchannels hollowness. As a result, with the brand new reverse-V-shape trench, epitaxial lateral overgrowth layer reaches higher SCD surface morphology and crystal quality.

Download Full-text