scholarly journals Temperature Sensitivity Analysis of Dual Material Stack Gate Oxide Source Dielectric Pocket TFET

2022 ◽  
Author(s):  
Dharmender Nishad ◽  
Kaushal Nigam ◽  
Satyendra Kumar
Keyword(s):  
Radio Frequency ◽  
Field Effect Transistor ◽  
Gate Oxide ◽  
Performance Parameters ◽  
Third Order ◽  
Temperature Variations ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
The Impact ◽  
Dual Material

Abstract Temperature dependence performance variation is one of the major concerns in predicting the actual electrical characteristics of the device as the bandgap of semiconducting material varies with temperature. Therefore, in this article, for the first time, the impact of temperature variations ranging from 300K to 450K on the DC, analog/ radio frequency, and linearity performance of dual material stack gate oxide-source dielectric pocket-tunnel- field-effect transistor (DMSGO-SDP-TFET) is investigated. In this regard, technology computer-aided design (TCAD) simulator is used to analyze DC, and analog/radio frequency performance parameters such as carrier concentration, energy band variation, band to band tunneling rate, IDS - VGS characteristics, transconductance (gm), cut o frequency (f T ),gain-bandwidth product (GBP), maximum oscillating frequency (fmax), transconductance frequency product (TFP), and transit time considering the impact of temperature variations. Furthermore, linearity parameters such as third-order transconductance (gm3), third-order voltage intercept point (VIP3), third-order input-interception point (IIP3), and intermodulation distortion (IMD3) are also analyzed with temperature variations as these performance parameters are significant for linear and analog/radio frequency applications. Moreover, the performance of the proposed DMSGO- SDP-TFET is compared with the conventional dual-material stack gate oxide-tunnel- field-effect transistor (DMSGO-TFET). From the comparative analysis, in terms of % per kelvin, DMSGO-SDP-TFET demonstrates lesser sensitivity towards temperature variation. Hence, the proposed DMSGO-SDP-TFET can be a suitable candidate for low power switching and analog/radio frequency applications at elevated temperatures as compared to conventional DMSGO-TFET.

scholarly journals Temperature Sensitivity Analysis of Dual Material Stack Gate Oxide Source Dielectric Pocket TFET

2021 ◽  
Author(s):  
Dharmender Nishad ◽  
Kaushal Nigam ◽  
Satyendra Kumar
Keyword(s):  
Radio Frequency ◽  
Field Effect Transistor ◽  
Gate Oxide ◽  
Performance Parameters ◽  
Third Order ◽  
Temperature Variations ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
The Impact ◽  
Dual Material

Abstract Temperature dependence performance variation is one of the major concerns in predicting the actual electrical characteristics of the device as the bandgap of semiconducting material varies with temperature. Therefore, in this article, for the first time the impact of temperature variations ranging from 300K to 450K on the DC, analog/ radio frequency, and linearity performance of dual material stack gate oxide-source dielectric pocket-tunnel- field-effect transistor (DMSGO-SDP-TFET) is investigated. In this regard, technology computer-aided design (TCAD) simulator is used to analyze DC, and analog/radio frequency performance parameters such as carrier concentration, energy band variation, electric field variation, IDS - VGS characteristics, transconductance (gm), cut o frequency (f T ),gain-bandwidth product (GBP), maximum oscillating frequency (fmax), transconductance frequency product (TFP), and transit time considering the impact of temperature variations. Furthermore, linearity parameters such as third-order transconductance (gm3), third-order voltage intercept point (VIP3), third-order input-interception point (IIP3), and intermodulation distortion (IMD3) are also analyzed with temperature variations as these performance parameters are significant for linear and analog/radio frequency applications. Moreover, the performance of the proposed DMSGO- SDP-TFET is compared with the conventional dual-material stack gate oxide-tunnel- field-effect transistor (DMSGO-TFET). From the comparative analysis, in terms of % per kelvin, DMSGO-SDP-TFET demonstrates lesser sensitivity towards temperature variation. Hence, the proposed DMSGO-SDP-TFET can be a suitable candidate for low power switching and analog/radio frequency applications at elevated temperatures as compared to conventional DMSGO-TFET.

scholarly journals Impactful Study of F-shaped Tunnel FET

2021 ◽  
Author(s):  
PRABHAT SINGH ◽  
DHARMENDRA SINGH YADAV
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Source Region ◽  
Gate Oxide ◽  
Crowding Effect ◽  
Turn On ◽  
Tunnel Fet ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
The Impact

Abstract In this proposed work, a novel single gate F-shaped channel tunnel field effect transistor (SG-FC-TFET) is proposed and investigated. The impact of thickness of the source region and lateral tunneling length between the gate oxide and edge of the source region on analog and radio frequency parameters are investigated with appropriate source and drain lateral length through the 2D-TCAD tool. The slender shape of the source enhanced the electric le crowding effect at the corners of the source region which reflect in term of high On-current (Ion). The Ion of proposed device is increased up to 10-4 A=μm with reduced sub-threshold swing (SS) is 7.3 mV/decade and minimum turn-ON voltage (Von = 0.28 V). The analog/RF parameters of SG-FC-TFET are optimized.

Temperature Sensitivity Analysis of Extended Source Double Gate Tunnel Field Effect Transistor

2021 ◽  
Author(s):  
Dharmender Nishad ◽  
Kaushal Nigam ◽  
Satyendra Kumar
Keyword(s):  
Temperature Sensitivity ◽  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Effect Of Temperature ◽  
Double Gate ◽  
Extended Source ◽  
Temperature Variations ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor

Abstract Temperature-induced performance variation is one of the main concerns of the conventional stack gate oxide double gate tunnel field-effect transistor (SGO-DG-TFET). In this regard, we investigate the temperature sensitivity of extended source double gate tunnel field-effect transistor (ESDG-TFET). For this, we have analyzed the effect of temperature variations on the transfer characteristics, analog/RF, linearity and distortion figure of merits (FOMs) using technology computer aided design (TCAD) simulations. Further, the temperature sensitivity performance is compared with conventional SGO-DG-TFET. The comparative analysis shows that ESDG-TFET is less sensitive to temperature variations compared to the conventional SGO-DG-TFET. Therefore, this indicates that ESDG-TFET is more reliable for low-power, high-frequency applications at a higher temperature compared to conventional SGO-DG-TFET.

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