scholarly journals High-Performance BaTiO3 Film Based on Aqueous Tape Casting for Ultrathin MLCC Applications

2021 ◽  
Author(s):  
Pengfei Wang ◽  
Lei Zhang ◽  
Shuhui Yu ◽  
Xiuhua Cao ◽  
Zhenxiao Fu ◽  
...  
Keyword(s):  
High Performance ◽  
Tape Casting ◽  
Hysteresis Loops ◽  
Acrylic Resin ◽  
Bias Field ◽  
Dielectric Constants ◽  
Solids Loading ◽  
High Solids Loading ◽  
Pt Electrodes ◽  
Ferroelectric Hysteresis

Abstract Environment-friendly aqueous tape-casting are proposed as an inevitable tendency for producing a high-quality BaTiO3-based film in the development of ultra-thin multilayer ceramic capacitors. In this study, aqueous BaTiO3 suspension with high solids loading produced by using polycarboxylate ammonium salt APC (dispersant), proprietary acrylic formulation binder solution WB4101 (binder), and acrylic resin PL002 (plasticizer), respectively. It is demonstrated that the green density, tensile strength, and strain at failure of the 9.5-μm-thin BaTiO3 tape achieves 3.65 g/cm3, 7.65 MPa, and 11%, respectively. In particular, the capacitance and dielectric loss of BaTiO3-based MLCC chips at room temperature are found to be approximately 28 nF and 0.02 compatible with Pt electrodes. Additionally, the TCC, ferroelectric hysteresis loops, change of dielectric constants versus DC-BIAS field, and evolution of electrical resistivity under accelerated DC stressing of BaTiO3-based MLCC are studied. The results provide an effective method for the future improvement in aqueous MLCC applications.

scholarly journals Dielectric Anisotropy in Partially Grain-Oriented Bi2VO5.5Ceramics

1995 ◽  
Vol 18 (3) ◽  
pp. 137-144 ◽  
Author(s):  
K. V. R. Prasad ◽  
K. B. R. Varma
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Grain Orientation ◽  
Hysteresis Loops ◽  
Dielectric Constants ◽  
Dielectric Anisotropy ◽  
Ferroelectric Domains ◽  
Ferroelectric Hysteresis ◽  
Microstructural Studies ◽  
Scanning Electron

Ceramics obtained from quenching melts of prereacted polycrystalline Bi2V5.5exhibit grain orientation (~ 55%). Microstructural studies carried out using scanning electron microscopy (SEM) on subsequently annealed ceramics show ferroelectric domains. These post-annealed ceramics possess dielectric anisotropies of about 1:1.2 at 300 K and 1:4.3 in the vicinity of the Curie temperature (~ 730 K) between the directions parallel and perpendicular to the quenching direction. The dielectric constants of the samples, obtained by quenching the melts, are higher than that of the post-annealed ceramics. Electrically poled and thermally cycled samples of both as-quenched and post-annealed exhibit ferroelectric hysteresis loops at 300 K.

Dynamic characteristics of defect dipoles in Mn-doped 0.24Pb(In1/2Nb1/2)O3–0.47Pb(Mg1/3Nb2/3)O3–0.29PbTiO3 single crystal

CrystEngComm ◽  
2019 ◽  
Vol 21 (2) ◽  
pp. 348-355 ◽  
Author(s):  
Xudong Qi ◽  
Enwei Sun ◽  
Weiming Lü ◽  
Shiyang Li ◽  
Bin Yang ◽  
...  
Keyword(s):  
Single Crystal ◽  
Dynamic Characteristics ◽  
Hysteresis Loops ◽  
Bias Field ◽  
Internal Bias ◽  
Ferroelectric Hysteresis ◽  
Mn Doped ◽  
Internal Bias Field

The dynamic ferroelectric hysteresis loops with internal bias field were investigated in poled and aged Mn-doped 0.24Pb(In1/2Nb1/2)O3–0.47Pb(Mg1/3Nb2/3)O3–0.29PbTiO3 single crystal.

scholarly journals Fabrication of ultrathin film capacitors by chemical solution deposition

2007 ◽  
Vol 22 (10) ◽  
pp. 2868-2874 ◽  
Author(s):  
Geoff L. Brennecka ◽  
Bruce A. Tuttle
Keyword(s):  
Chemical Solution Deposition ◽  
Hysteresis Loops ◽  
Dielectric Constants ◽  
Processing Route ◽  
Chemical Solution ◽  
Lead Lanthanum Zirconate Titanate ◽  
Lanthanum Zirconate ◽  
Solution Deposition ◽  
Phase Development ◽  
Ferroelectric Hysteresis

A facile solution-based processing route using standard spin-coating deposition techniques has been developed for the production of reliable capacitors based on lead lanthanum zirconate titanate (PLZT) with active areas of ⩾1 mm2 and dielectric layer thicknesses down to 50 nm. With careful control of the dielectric phase development through improved processing, ultrathin capacitors exhibited slim ferroelectric hysteresis loops and dielectric constants of >1000, similar to those of much thicker films. Thus, it has been demonstrated that chemical solution deposition is a viable route to the production of capacitor films which are as thin as 50 nm but are still macroscopically addressable with specific capacitance values >160 nF/mm2.

Preparation of Low Cost Ti-6Al-4V Alloy by Gelcasting

2012 ◽  
Vol 468-471 ◽  
pp. 2078-2081
Author(s):  
Qing Ye ◽  
Jun Jie Hao ◽  
Zhi Meng Guo ◽  
Min Chao Ru
Keyword(s):  
Relative Density ◽  
High Performance ◽  
Bending Strength ◽  
Low Cost ◽  
Morphological Properties ◽  
Green Body ◽  
High Solids ◽  
Rotating Electrode ◽  
Solids Loading ◽  
High Solids Loading

Ti-6Al-4V alloy was prepared by gelcasting. Plasma rotating electrode and hydrogenation-dehydrogenation Ti-6Al-4V powders were mixed used to meet both high performance and low cost objectives. The morphological properties were investigated by SEM. The results showed that the gelcasting green body with mixed powders has advantages of high solids loading and excellent sinterability. After sintered at 1400°C for 2h, the relative density reached 98%. The bending strength and hardness were 313MPa and 49.8(HRC).

The effect of high solids loading in ethanol production integrated with a pulp mill

2016 ◽  
Vol 111 ◽  
pp. 387-402 ◽  
Author(s):  
Elin Svensson ◽  
Valeria Lundberg ◽  
Mikael Jansson ◽  
Charilaos Xiros ◽  
Thore Berntsson
Keyword(s):  
Ethanol Production ◽  
Pulp Mill ◽  
High Solids ◽  
Solids Loading ◽  
High Solids Loading

Ferroelectric C-Axis Oriented Pb5Ge3O11 Thin Films for One Transistor Memory Application

1998 ◽  
Vol 541 ◽  
Author(s):  
Tingkai Li ◽  
Fengyan Zhang ◽  
Sheng Teng Hsu
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Chemical Vapor ◽  
Dielectric Constants ◽  
Memory Devices ◽  
Leakage Currents ◽  
Fatigue Characteristics ◽  
Ferroelectric Memory ◽  
Memory Applications

AbstractOne transistor memory devices have been proposed recently. To meet the needs of one transistor memory applications, C-axis oriented Pb5Ge3O11 (PGO) thin films were prepared using metalorganic chemical vapor deposition (MOCVD) and rapid thermal processing (RTP). It was found that the nucleation of C-axis Pb5Ge3O11 phase started at a deposition temperature below 400°C and grain growth dominated at 500°C or above. With increasing annealing temperature, the remanent polarization (Pr) and coercive field (Ec) values increased, and the hysteresis loops of the Pb5Ge3O11 films were well saturated and symmetrical after the post-annealing. The C-axis PGO thin film showed good ferroelectric properties at 5V: 2Pr and 2Ec values were 2.0 - 4.0 µC/cm2 and 90 - 110 kV/cm, respectively. The films also showed excellent fatigue characteristics: no fatigue was observed up to 1 × 109 switching cycles. The retention and imprint properties have also been studied. The leakage currents of the PGO films were 2 - 5 × 10−7 A/cm2 at 100 kV/cm and dielectric constants were 40 - 70. The high quality MOCVD Pb5Ge3O11 films can be used for single transistor ferroelectric memory devices.

Non-linear dynamics of the Villari effect in the presence of a non-homogeneous magnetic field

2018 ◽  
Vol 233 (4) ◽  
pp. 431-440
Author(s):  
Andrzej Rysak ◽  
Magdalena Gregorczyk
Keyword(s):  
Magnetic Field ◽  
Time Series ◽  
Hysteresis Loops ◽  
Bias Field ◽  
Homogeneous Magnetic Field ◽  
Operating Conditions ◽  
Bias Magnetic Field ◽  
Linear Dynamics ◽  
Non Linear ◽  
Magnetostrictive Devices

Investigations of systems with an active magnetostrictive element generally assume the presence of an external homogeneous bias magnetic field. This article, however, presents the results of a study investigating a bimorph magnetostrictive-aluminium beam vibrating in a non-homogeneous bias field. By comparing results obtained under different operating conditions of the system, the combined effect of the non-linear beam stress and the non-homogeneous external magnetic field on the dynamics of the Villari phenomenon is determined. The preliminary results prove that the application of non-linear magnetic fields to the magnetostrictive devices ensures the extension of energy harvesting bandwidth of these devices and can be used to improve their control possibilities. A study of time series and hysteresis loops provides more detailed information about the non-linear magnetization and dynamics of the system.

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