Research in Mechanics of MEMS Devices

2000 ◽  
Author(s):  
D. J. Chang ◽  
S. T. Amimoto ◽  
A. D. Birkitt
Keyword(s):  
Mems Devices

Deposition and Characterization of Al2O3 and BiFeO3 Thin Films on Titanium Substrates for Tough MEMS Devices

2017 ◽  
Vol 137 (1) ◽  
pp. 46-47
Author(s):  
Takeshi Kohno ◽  
Masato Mihara ◽  
Ataru Tanabe ◽  
Takashi Abe ◽  
Masanori Okuyama ◽  
...  
Keyword(s):  
Thin Films ◽  
Mems Devices ◽  
Titanium Substrates

Actuator for Out-of-Plane MEMS Devices

2001 ◽  
Author(s):  
A. D. Johnson ◽  
Vikas Gupta
Keyword(s):  
Mems Devices ◽  
Out Of Plane

Study on characteristics of schottky temperature detector based on metal/n-ZnO/n-Si structures

2020 ◽  
Vol 12 ◽  
Author(s):  
Fang Wang ◽  
Jingkai Wei ◽  
Caixia Guo ◽  
Tao Ma ◽  
Linqing Zhang ◽  
...  
Keyword(s):  
High Temperature ◽  
Temperature Measurement ◽  
Temperature Response ◽  
Large Temperature ◽  
Mems Devices ◽  
Temperature Range ◽  
Response Characteristics ◽  
High Temperature Measurement ◽  
Temperature Detector ◽  
Schottky Structure

Background: At present, the main problems of Micro-Electro-Mechanical Systems (MEMS) temperature detector focus on the narrow range of temperature detection, difficulty of the high temperature measurement. Besides, MEMS devices have different response characteristics for various surrounding temperature in the petrochemical and metallurgy application fields with high-temperature and harsh conditions. To evaluate the performance stability of the hightemperature MEMS devices, the real-time temperature measurement is necessary. Objective: A schottky temperature detector based on the metal/n-ZnO/n-Si structures is designed to measure high temperature (523~873K) for the high-temperature MEMS devices with large temperature range. Method: By using the finite element method (FEM), three different work function metals (Cu, Ni and Pt) contact with the n-ZnO are investigated to realize Schottky. At room temperature (298K) and high temperature (523~873K), the current densities with various bias voltages (J-V) are studied. Results: The simulation results show that the high temperature response power consumption of three schottky detectors of Cu, Ni and Pt decreases successively, which are 1.16 mW, 63.63 μW and 0.14 μW. The response temperature sensitivities of 6.35 μA/K, 0.78 μA/K, and 2.29 nA/K are achieved. Conclusion: The Cu/n-ZnO/n-Si schottky structure could be used as a high temperature detector (523~873K) for the hightemperature MEMS devices. It has a large temperature range (350K) and a high response sensitivity is 6.35 μA/K. Compared with traditional devices, the Cu/n-ZnO/n-Si Schottky structure based temperature detector has a low energy consumption of 1.16 mW, which has potential applications in the high-temperature measurement of the MEMS devices.

An all-silicon process platfom for wafer-level vacuum packaged MEMS devices

2021 ◽  
pp. 1-1
Author(s):  
Mustafa Mert Torunbalci ◽  
Hasan Dogan Gavcar ◽  
Ferhat Yesil ◽  
Said Emre Alper ◽  
Tayfun Akin
Keyword(s):  
Mems Devices ◽  
Wafer Level

scholarly journals A Tunable-Gain Transimpedance Amplifier for CMOS-MEMS Resonators Characterization

Micromachines ◽  
2021 ◽  
Vol 12 (1) ◽  
pp. 82
Author(s):  
Rafel Perelló-Roig ◽  
Jaume Verd ◽  
Sebastià Bota ◽  
Jaume Segura
Keyword(s):  
Cmos Technology ◽  
Open Loop ◽  
Transimpedance Amplifier ◽  
Mems Devices ◽  
Monolithically Integrated ◽  
Mems Resonators ◽  
Electromechanical Performance ◽  
Cmos Mems ◽  
Promising Solution ◽  
On Chip

CMOS-MEMS resonators have become a promising solution thanks to their miniaturization and on-chip integration capabilities. However, using a CMOS technology to fabricate microelectromechanical system (MEMS) devices limits the electromechanical performance otherwise achieved by specific technologies, requiring a challenging readout circuitry. This paper presents a transimpedance amplifier (TIA) fabricated using a commercial 0.35-µm CMOS technology specifically oriented to drive and sense monolithically integrated CMOS-MEMS resonators up to 50 MHz with a tunable transimpedance gain ranging from 112 dB to 121 dB. The output voltage noise is as low as 225 nV/Hz1/2—input-referred current noise of 192 fA/Hz1/2—at 10 MHz, and the power consumption is kept below 1-mW. In addition, the TIA amplifier exhibits an open-loop gain independent of the parasitic input capacitance—mostly associated with the MEMS layout—representing an advantage in MEMS testing compared to other alternatives such as Pierce oscillator schemes. The work presented includes the characterization of three types of MEMS resonators that have been fabricated and experimentally characterized both in open-loop and self-sustained configurations using the integrated TIA amplifier. The experimental characterization includes an accurate extraction of the electromechanical parameters for the three fabricated structures that enables an accurate MEMS-CMOS circuitry co-design.

scholarly journals Cavity-BOX SOI: Advanced Silicon Substrate with Pre-Patterned BOX for Monolithic MEMS Fabrication

Micromachines ◽  
2021 ◽  
Vol 12 (4) ◽  
pp. 414
Author(s):  
Marta Maria Kluba ◽  
Jian Li ◽  
Katja Parkkinen ◽  
Marcus Louwerse ◽  
Jaap Snijder ◽  
...  
Keyword(s):  
Complex Geometry ◽  
Pressure Sensors ◽  
Silicon On Insulator ◽  
Test Case ◽  
Mems Devices ◽  
Device Layer ◽  
Mems Fabrication ◽  
Silicon Islands ◽  
Design Freedom ◽  
Deep Brain

Several Silicon on Insulator (SOI) wafer manufacturers are now offering products with customer-defined cavities etched in the handle wafer, which significantly simplifies the fabrication of MEMS devices such as pressure sensors. This paper presents a novel cavity buried oxide (BOX) SOI substrate (cavity-BOX) that contains a patterned BOX layer. The patterned BOX can form a buried microchannels network, or serve as a stop layer and a buried hard-etch mask, to accurately pattern the device layer while etching it from the backside of the wafer using the cleanroom microfabrication compatible tools and methods. The use of the cavity-BOX as a buried hard-etch mask is demonstrated by applying it for the fabrication of a deep brain stimulation (DBS) demonstrator. The demonstrator consists of a large flexible area and precisely defined 80 µm-thick silicon islands wrapped into a 1.4 mm diameter cylinder. With cavity-BOX, the process of thinning and separating the silicon islands was largely simplified and became more robust. This test case illustrates how cavity-BOX wafers can advance the fabrication of various MEMS devices, especially those with complex geometry and added functionality, by enabling more design freedom and easing the optimization of the fabrication process.

scholarly journals Manufacturing issues of BEOL CMOS-MEMS devices

IEEE Access ◽  
2021 ◽  
pp. 1-1
Author(s):  
Juan Valle ◽  
Daniel Fernandez ◽  
Olivier Gibrat ◽  
Jordi Madrenas
Keyword(s):  
Mems Devices ◽  
Cmos Mems
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