Structure characterization of bulk single crystals using X-ray back reflection methods

We report the growth and characterization of different bulk single crystals of organo lead mixed halide perovskites CH3NH3PbI3−xBrx by two different crystal growth approaches: (i)anti-solvent diffusion, and (ii) inverse temperature crystallization. In order to control the size and the shape of crystals, we have investigated different experimental growth parameters such as temperature and precursor concentration. The morphology of obtained crystals was observed by optical microscope, whereas their intrinsic crystalline properties were characterized by single crystal as well as powder X-ray diffraction. The results illustrated that the growth and crystalline structure of mixed halide perovskites CH3NH3PbI3−xBrx could be easily tuned.

Download Full-text

3D synchrotron X-ray microtomography for paper structure characterization of z-structured paper by introducing micro nanofibrillated cellulose

Nordic Pulp & Paper Research Journal ◽

10.3183/npprj-2016-31-02-p219-224 ◽

2016 ◽

Vol 31 (2) ◽

pp. 219-224 ◽

Cited By ~ 1

Author(s):

Mohamed Ali ◽

Mangin Patrice ◽

Boller Elodie ◽

Bloch Jean-Francis

Keyword(s):

Nanofibrillated Cellulose ◽

Structure Characterization ◽

X Ray ◽

Paper Structure ◽

Micro Nanofibrillated Cellulose

Download Full-text

Characterization of Natural and Synthesized FeTiO3 Crystals With RBS/PIXE/XRD

International Journal of PIXE ◽

10.1142/s0129083597000308 ◽

1997 ◽

Vol 07 (03n04) ◽

pp. 265-275

Author(s):

R. Q. Zhang ◽

S. Yamamoto ◽

Z. N. Dai ◽

K. Narumi ◽

A. Miyashita ◽

...

Keyword(s):

Single Crystals ◽

Ion Beam ◽

Pressure Control ◽

Floating Zone ◽

X Ray Diffraction ◽

X Ray ◽

Beam Analysis ◽

Ppm Level

Natural FeTiO 3 (illuminate) and synthesized FeTiO 3, single crystals were characterized by Rutherford backscattering spectroscopy combined with channeling technique and particle-induced x-ray emission (RBS-C and PIXE). The results obtained by the ion beam analysis were supplemented by the x-ray diffraction analysis to identify the crystallographic phase. Oriented single crystals of synthesized FeTiO 3 were grown under the pressure control of CO 2 and H 2 mixture gas using a single-crystal floating zone technique. The crystal quality of synthesized FeTiO 3 single crystals could be improved by the thermal treatment but the exact pressure control is needed to avoid the precipitation of Fe 2 O 3 even during the annealing procedure. Natural FeTiO 3 contains several kinds of impurities such as Mn , Mg , Na and Si . The synthesized samples contain Al , Si and Na which are around 100 ppm level as impurities. The PBS-C results of the natural sample imply that Mn impurities occupy the Fe sublattice in FeTiO 3 or in mixed phase between ilmenite and hematite.

Download Full-text

The Characterization of Defects in Silicon Carbide Crystals by X-Ray Topography in the Back-Reflection Geometry

Defect and Diffusion Forum ◽

10.4028/www.scientific.net/ddf.230-232.1 ◽

2004 ◽

Vol 230-232 ◽

pp. 1-16 ◽

Cited By ~ 1

Author(s):

William M. Vetter

Keyword(s):

Silicon Carbide ◽

Computer Algorithms ◽

Reflection Mode ◽

X Ray ◽

Back Reflection ◽

Device Structures ◽

Reflection Geometry ◽

Grade Silicon ◽

Favorable Conditions

Synchrotron white-beam x-ray topographs taken in the back-reflection mode have proved a powerful tool in the study of defects in semiconductor-grade silicon carbide crystals. Capable of mapping the distribution of axial dislocations across a wafer's area (notably the devastating micropipe defect), it can also provide information on their natures. Under favorable conditions, various other types of defect may be observed in back-reflection topographs of SiC, among which are subgrain boundaries, inclusions, and basal plane dislocations. Observed defect images in backreflection topographs may be simulated using relatively simple computer algorithms based on ray tracing. It has been possible to use back-reflection topographs of SiC substrates with device structures deposited upon them to relate the incidence of defects to device failure.

Download Full-text

The Characterization of Large Single Crystals by High-Voltage X-Ray Laue Photographs

Advances in X-Ray Analysis ◽

10.1007/978-1-4684-8783-1_13 ◽

1963 ◽

pp. 158-163

Author(s):

H. S. Peiser ◽

E. P. Levine

Keyword(s):

Single Crystals ◽

High Voltage ◽

X Ray

Download Full-text

X-ray topo-tomography studies of linear dislocations in silicon single crystals

Journal of Applied Crystallography ◽

10.1107/s160057671801419x ◽

2018 ◽

Vol 51 (6) ◽

pp. 1616-1622 ◽

Cited By ~ 6

Author(s):

Victor Asadchikov ◽

Alexey Buzmakov ◽

Felix Chukhovskii ◽

Irina Dyachkova ◽

Denis Zolotov ◽

...

Keyword(s):

Numerical Analysis ◽

High Resolution ◽

Single Crystals ◽

Complete Characterization ◽

Reconstruction Technique ◽

Algebraic Reconstruction Technique ◽

X Ray ◽

Laboratory Setup ◽

Simultaneous Algebraic Reconstruction Technique

This article describes complete characterization of the polygonal dislocation half-loops (PDHLs) introduced by scratching and subsequent bending of an Si(111) crystal. The study is based on the X-ray topo-tomography technique using both a conventional laboratory setup and the high-resolution X-ray image-detecting systems at the synchrotron facilities at KIT (Germany) and ESRF (France). Numerical analysis of PDHL images is performed using the Takagi–Taupin equations and the simultaneous algebraic reconstruction technique (SART) tomographic algorithm.

Download Full-text