Low-cost Engineering of Laser Rods and Slabs with Liquid Phase Epitaxy

2011 ◽  
Author(s):  
Jeffrey O. White ◽  
Carl E. Mungan
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Low Cost ◽  
Cost Engineering

Defect reduction by liquid phase epitaxy of germanium on single-crystalline-like germanium templates on flexible, low-cost metal substrates

CrystEngComm ◽  
2018 ◽  
Vol 20 (41) ◽  
pp. 6573-6579 ◽  
Author(s):  
Yongkuan Li ◽  
Haichao Guo ◽  
Yao Yao ◽  
Pavel Dutta ◽  
Monika Rathi ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Low Cost ◽  
Defect Reduction ◽  
Single Crystalline ◽  
Metal Substrates

Device-quality germanium is achieved using liquid phase epitaxy on single-crystalline-like germanium templates.

TEM study of very thin InGaAsP layers grown by liquid-phase epitaxy

1990 ◽  
Vol 48 (4) ◽  
pp. 672-673
Author(s):  
N.A. Bert ◽  
A.O. Kosogov
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Chemical Vapor ◽  
Growth Conditions ◽  
Dark Field ◽  
Organic Chemical ◽  
Simple Liquid ◽  
Cross Sectional ◽  
Conventional Procedure ◽  
Double Heterostructures

The very thin (<100 Å) InGaAsP layers were grown not only by molecular beam epitaxy and metal-organic chemical vapor deposition but recently also by simple liquid phase epitaxy (LPE) technique. Characterization of their thickness, interfase abruptness and lattice defects is important and requires TEM methods to be used.The samples were InGaAsP/InGaP double heterostructures grown on (111)A GaAs substrate. The exact growth conditions are described in Ref.1. The salient points are that the quarternary layers were being grown at 750°C during a fast movement of substrate and a convection caused in the melt by that movement was eliminated. TEM cross-section specimens were prepared by means of conventional procedure. The studies were conducted in EM 420T and JEM 4000EX instruments.The (200) dark-field cross-sectional imaging is the most appropriate TEM technique to distinguish between individual layers in 111-v semiconductor heterostructures.

Silicon layers grown over SiO2 by liquid phase epitaxy: Electron Microscopical study

1990 ◽  
Vol 48 (4) ◽  
pp. 566-567
Author(s):  
F. Banhart ◽  
F.O. Phillipp ◽  
R. Bergmann ◽  
E. Czech ◽  
M. Konuma ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Liquid Phase ◽  
Plasma Etching ◽  
Liquid Phase Epitaxy ◽  
Three Dimensional ◽  
Microscopical Study ◽  
Sample Temperature ◽  
Structural Defects ◽  
Si Substrates ◽  
Etched Surface

Defect-free silicon layers grown on insulators (SOI) are an essential component for future three-dimensional integration of semiconductor devices. Liquid phase epitaxy (LPE) has proved to be a powerful technique to grow high quality SOI structures for devices and for basic physical research. Electron microscopy is indispensable for the development of the growth technique and reveals many interesting structural properties of these materials. Transmission and scanning electron microscopy can be applied to study growth mechanisms, structural defects, and the morphology of Si and SOI layers grown from metallic solutions of various compositions.The treatment of the Si substrates prior to the epitaxial growth described here is wet chemical etching and plasma etching with NF3 ions. At a sample temperature of 20°C the ion etched surface appeared rough (Fig. 1). Plasma etching at a sample temperature of −125°C, however, yields smooth and clean Si surfaces, and, in addition, high anisotropy (small side etching) and selectivity (low etch rate of SiO2) as shown in Fig. 2.

Application of Disk Aerators to Recarbonation of Alkaline Wastewater from Wet Gasification of Carbide

1991 ◽  
Vol 24 (7) ◽  
pp. 277-284 ◽  
Author(s):  
E. Gomólka ◽  
B. Gomólka
Keyword(s):  
Carbon Dioxide ◽  
Liquid Phase ◽  
Gas Phase ◽  
Flue Gas ◽  
Carbonic Acid ◽  
Low Cost ◽  
Flue Gases ◽  
Carbon Dioxide Content ◽  
Patent Claim ◽  
Phase Dispersion

Whenever possible, neutralization of alkaline wastewater should involve low-cost acid. It is conventional to make use of carbonic acid produced via the reaction of carbon dioxide (contained in flue gases) with water according to the following equation: Carbon dioxide content in the flue gas stream varies from 10% to 15%. The flue gas stream may either be passed to the wastewater contained in the recarbonizers, or. enter the scrubbers (which are continually sprayed with wastewater) from the bottom in oountercurrent. The reactors, in which recarbonation occurs, have the ability to expand the contact surface between gaseous and liquid phase. This can be achieved by gas phase dispersion in the liquid phase (bubbling), by liquid phase dispersion in the gas phase (spraying), or by bubbling and spraying, and mixing. These concurrent operations are carried out during motion of the disk aerator (which is a patent claim). The authors describe the functioning of the disk aerator, the composition of the wastewater produced during wet gasification of carbide, the chemistry of recarbonation and decarbonation, and the concept of applying the disk aerator so as to make the wastewater fit for reuse (after suitable neutralization) as feeding water in acetylene generators.

Indium phosphide and quaternary doping superlattices grown by liquid-phase epitaxy

1987 ◽  
Vol 23 (7) ◽  
pp. 324 ◽  
Author(s):  
P.D. Greene ◽  
A.D. Prins ◽  
D.J. Dunstan ◽  
A.R. Adams
Keyword(s):  
Liquid Phase ◽  
Indium Phosphide ◽  
Liquid Phase Epitaxy

scholarly journals Concentric annular liquid–liquid phase separation for flow chemistry and continuous processing

2021 ◽  
Author(s):  
Matthew J. Harding ◽  
Bin Feng ◽  
Rafael Lopez-Rodriguez ◽  
Heather O'Connor ◽  
Denis Dowling ◽  
...  
Keyword(s):  
Phase Separation ◽  
Liquid Phase ◽  
Low Cost ◽  
Flow Chemistry ◽  
Continuous Processing ◽  
Surface Wetting ◽  
Tubular Membrane ◽  
Annular Channels ◽  
Phase Separator ◽  
Liquid Liquid Phase Separation

A low-cost, modular, robust, and easily customisable continuous liquid–liquid phase separator has been developed that uses a tubular membrane and annular channels to allow high fluidic throughputs while maintaining rapid, surface wetting dominated, phase separation.

scholarly journals LPE Growth of Composite Thermoluminescent Detectors Based on the Lu3−xGdxAl5O12:Ce Single Crystalline Films and YAG:Ce Crystals

Crystals ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 189 ◽  
Author(s):  
Sandra Witkiewicz-Lukaszek ◽  
Anna Mrozik ◽  
Vitalii Gorbenko ◽  
Tetiana Zorenko ◽  
Pawel Bilski ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Liquid Phase Epitaxy ◽  
Single Crystalline ◽  
Epitaxial Structure ◽  
Simultaneous Registration ◽  
Crystalline Films ◽  
Ionization Radiation ◽  
Growth Method ◽  
The Difference ◽  
Thermoluminescent Detectors

This work is dedicated to the development of new types of composite thermoluminescent (TL) detectors for simultaneous registration of the different components of ionization radiation based on the single crystalline films (SCFs) of Ce3+-doped Lu3−xGdxAl5O12:Ce (x = 0–1.5) garnet and Y3Al5O12:Ce (YAG:Ce) substrates using the liquid phase epitaxy (LPE) growth method. For this purpose, the TL properties of the mentioned epitaxial structures were examined in Risø TL/OSL-DA-20 reader under excitation by α- and β-particles from 242Am and 90Sr-90Y sources. We have shown that the cation engineering of SCF content can result in more significant separation of the TL glow curves of SCFs and substrates under α- and β-particle excitations in comparison with the prototype of such composite detectors based on the Lu3Al5O12:Ce (LuAG:Ce)/YAG:Ce epitaxial structure. Specifically, the difference between the TL glow curves of Lu1.5Gd1.5Al5O12:Ce SCFs and YAG:Ce substrates increases up to 120 K in comparison with a respective value of 80 degrees in the prototype based on the LuAG:Ce/YAG:Ce epitaxial structure. Therefore, the LPE-grown epitaxial structures containing Lu1.5Gd1.5Al5O12:Ce SCFs and Ce3+-doped YAG:Ce substrate can be successfully applied for simultaneous registration of α- and β-particles in mixed fluxes of ionization radiation.

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