Effect of Glow-discharge Hydrogen Plasma Treatment on Zinc Oxide Layers Prepared through Pulsed Electrochemical Deposition and via SILAR Method

2019 ◽  
Vol 11 (5) ◽  
pp. 05002-1-05002-7
Author(s):  
N. P. Klochko ◽  
◽  
K. S. Klepikova ◽  
S. I. Petrushenko ◽  
A. V. Nikitin ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Glow Discharge ◽  
Plasma Treatment ◽  
Electrochemical Deposition ◽  
Hydrogen Plasma ◽  
Silar Method ◽  
Oxide Layers

Study of Atmospheric-Pressure Plasma Enhanced Chemical Vapor Deposition Fabricated Indium Gallium Zinc Oxide Thin Film Transistors with In-Situ Hydrogen Plasma Treatment

2020 ◽  
Vol 20 (7) ◽  
pp. 4110-4113 ◽  
Author(s):  
Yi-Ming Chen ◽  
Chien-Hung Wu ◽  
Kow-Ming Chang ◽  
Yu-Xin Zhang ◽  
Ni Xu ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Plasma Treatment ◽  
Atmospheric Pressure ◽  
Thin Film Transistors ◽  
Hydrogen Plasma ◽  
Atmospheric Pressure Plasma ◽  
Oxide Thin Film ◽  
Pressure Plasma

Amorphous InGaZnO (a-IGZO) Thin Film Transistors (TFTs) has been studied extensively for their perspective applications in next generation active-matrix displays such as liquid crystal displays and flat-panel displays, due to its better field-effect mobility (>10 cm2/V · S), larger Ion/Ioff ratio (>106), and better stability electrical. Hydrogen is known as shallow donors for n-type (channel) oxide semiconductors (Dong, J.J., et al. 2010. Effects of hydrogen plasma treatment on the electrical and optical properties of Zno films: Identification of hydrogen donors in ZnO. ACS Appl. Mater. Interfaces, 2, pp.1780–1784), and it is also effective passivator for traps (Tsao, S.W., et al., 2010. Hydrogen-induced improvements in electrical characteristics of a-IGZO thin-film transistors. Solid-State Electron, 54, pp.1497–1499). In this study, In-Situ hydrogen plasma is applied to deposit IGZO channel. With atmospheric-pressure PECVD (AP-PECVD), IGZO thin film can be deposited without vacuum system, large area manufacturing, and cost reducing (Chang, K.M., et al., 2011. Transparent conductive indium-doped zinc oxide films prepared by atmospheric pressure plasma jet. Thin Solid Films, 519, pp.5114–5117). The results show that with appropriate flow ratio of Ar/H2 plasma treatment, the a-IGZO TFT device exhibits better performance with mobility (μFE) 19.7 cm2/V · S, threshold voltage (VT) 1.18 V, subthreshold swing (SS) 81 mV/decade, and Ion/Ioff ratio 5.35×107.

Effect of in situ hydrogen plasma treatment on zinc oxide grown using low temperature atomic layer deposition

2013 ◽  
Vol 31 (1) ◽  
pp. 01A124 ◽  
Author(s):  
Tae-Hoon Jung ◽  
Jin-Seong Park ◽  
Dong-Ho Kim ◽  
Yongsoo Jeong ◽  
Sung-Gyu Park ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Plasma Treatment ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Layer Deposition

The impact on in-situ-hydrogen-plasma treatment for zinc oxide plasma enhanced atomic layer deposition

2012 ◽  
Vol 12 ◽  
pp. S134-S138 ◽  
Author(s):  
Jung-Dae Kwon ◽  
Jae-Won Lee ◽  
Kee-Seok Nam ◽  
Dong-Ho Kim ◽  
Yongsoo Jeong ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Plasma Treatment ◽  
Hydrogen Plasma ◽  
Atomic Layer ◽  
Layer Deposition ◽  
The Impact

Improvement in Wide-Gap A-SI:H For High-Efficiency Solar Cells

1992 ◽  
Vol 258 ◽  
Author(s):  
Sadaji Tsuge ◽  
Yoshihiro Hishikawa ◽  
Shingo Okamoto ◽  
Manabu Sasaki ◽  
Shinya Tsuda ◽  
...  
Keyword(s):  
Solar Cells ◽  
Plasma Treatment ◽  
High Efficiency ◽  
Defect Density ◽  
Hydrogen Plasma ◽  
Wide Band ◽  
Open Circuit ◽  
Wide Band Gap ◽  
High Efficiency Solar Cells ◽  
Wide Gap

ABSTRACTA hydrogen-plasma treatment has been used for the first time to fabricate wide-gap, high-quality a-Si:H films. The hydrogen content (CH) of a-Si:H films substantially increases by the hydrogen-plasma treatment after deposition, without deteriorating the opto-electric properties of the films. The photoconductivity (σph) of ≥ 10-5 ο-1 cm-1, photosensitivity ( σ ph/σ d) of > 106 and SiH2/SiH of <0.2 are achieved for a film with CH of ∼25 atomic >%. The optical gap of the film is > 1.70 eV by the (α h ν )1/3 plot, and is >2 eV by the Tauc's plot. The open circuit voltage of a-Si solar cells exceeds 1 V conserving the fill factor of > 0.7 when the wide-gap a∼Si:H films are used as the i-layer, which proves the wide band gap and low defect density.

Plasma Treatment of Polyethylene Powder Particles in a Hollow Cathode Glow Discharge

2009 ◽  
Vol 6 (S1) ◽  
pp. S392-S396 ◽  
Author(s):  
Meike Quitzau ◽  
Matthias Wolter ◽  
Holger Kersten
Keyword(s):  
Glow Discharge ◽  
Plasma Treatment ◽  
Hollow Cathode ◽  
Powder Particles ◽  
Polyethylene Powder

Electro-magneto wave propagation analysis of viscoelastic sandwich nanoplates considering surface effects

2016 ◽  
Vol 231 (2) ◽  
pp. 387-403 ◽  
Author(s):  
A Ghorbanpour Arani ◽  
M Jamali ◽  
AH Ghorbanpour-Arani ◽  
R Kolahchi ◽  
M Mosayyebi
Keyword(s):  
Zinc Oxide ◽  
Wave Propagation ◽  
Feedback Control ◽  
Graphene Sheet ◽  
Surface Effects ◽  
Structural Damping ◽  
Sensors And Actuators ◽  
Velocity Feedback ◽  
Oxide Layers ◽  
Propagation Analysis

The original formulation of the quasi-3D sinusoidal shear deformation plate theory (SSDPT) is here extended to the wave propagation analysis of viscoelastic sandwich nanoplates considering surface effects. The sandwich structure contains a single layered graphene sheet as core integrated with zinc oxide layers as sensors and actuators. The single layered graphene sheet and zinc oxide layers are subjected, respectively, to 2D magnetic and 3D electric fields. Structural damping and surface effects are assumed using Kelvin–Voigt and Gurtin–Murdoch theories, respectively. The system is rested on an elastic medium which is simulated with a novel model namely as orthotropic visco-Pasternak foundation. An exact solution is applied in order to obtain the frequency, cut-off and escape frequencies. A displacement and velocity feedback control algorithm is applied for the active control of the frequency through a closed-loop control with bonded distributed zinc oxide sensors and actuators. The detailed parametric study is conducted, focusing on the combined effects of the nonlocal parameter, magnetic field, viscoelastic foundation, surface stress, applied voltage, velocity feedback control gain and structural damping on the wave propagation behavior of nanostructure. Results depict that with increasing the structural damping coefficient, frequency significantly decreases.

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