scholarly journals Wet Chemical Oxidation of Organic Waste Using Nitric-Phosphoric Acid Technology

10.2172/4885 ◽  
1998 ◽  
Author(s):  
R.A. Pierce
Keyword(s):  
Phosphoric Acid ◽  
Organic Waste ◽  
Chemical Oxidation ◽  
Wet Chemical

Effects of Wet Chemical Oxidation on Surface Functionalization and Morphology of Highly Oriented Pyrolytic Graphite

2020 ◽  
Author(s):  
Mikhail Trought ◽  
Isobel Wentworth ◽  
Timothy Leftwich ◽  
Kathryn Perrine
Keyword(s):  
Surface Functionalization ◽  
Functional Group ◽  
Pyrolytic Graphite ◽  
Surface Oxidation ◽  
Chemical Oxidation ◽  
Synthesis Methods ◽  
Acid Solutions ◽  
Highly Oriented Pyrolytic Graphite ◽  
Wet Chemical ◽  
Surface Morphologies

The knowledge of chemical functionalization for area selective deposition (ASD) is crucial for designing the next generation heterogeneous catalysis. Surface functionalization by oxidation was studied on the surface of highly oriented pyrolytic graphite (HOPG). The HOPG surface was exposed to with various concentrations of two different acids (HCl and HNO3). We show that exposure of the HOPG surface to the acid solutions produce primarily the same -OH functional group and also significant differences the surface topography. Mechanisms are suggested to explain these strikingly different surface morphologies after surface oxidation. This knowledge can be used to for ASD synthesis methods for future graphene-based technologies.

scholarly journals One-step Oxidation of Total Organic Carbon, Total Nitrogen, and Total Phosphorous using Wet Chemical Oxidation

2020 ◽  
Vol 42 (12) ◽  
pp. 603-609
Author(s):  
Jeong-Hwan Choi ◽  
Dong-Hun Shin ◽  
Hye-Bin Kim ◽  
Jong-Gook Kim ◽  
Kitae Baek
Keyword(s):  
Organic Carbon ◽  
Total Organic Carbon ◽  
Total Nitrogen ◽  
Uv Irradiation ◽  
Oxidation Process ◽  
Irradiation Time ◽  
Suitable Condition ◽  
Chemical Oxidation ◽  
Total Phosphorous ◽  
Wet Chemical

Objective:This study proposed the simultaneous multi-oxidation of total organic carbon, total nitrogen, and total phosphorous using modified wet chemical oxidation method.Methods:The multi oxidation process was based on the dual radical system with sulfate and hydroxyl radicals. The sodium persulfate (Na2S2O8) and sodium hydroxide (NaOH) were activated at 40℃ and UV irradiation with 254 nm to generate the sulfate radical and hydroxyl radical. The organic matters were oxidized by the dual radicals, and TOC, TN, and TP values were compared with the control group.Results and Discussion:The dual radical system oxidized organic carbon to carbon dioxide effectively, and the TOC values were similar to the value obtained from the high-temperature combustion technique. However, the residual persulfate after oxidation process interfered the absorbance for TN and inhibit the complexation in TP measurement. The residual persulfate was effectively converted to sulfate by longer heating and UV irradiation, and the interferences were more sensitive to reaction temperature than UV irradiation time. As a result, a higher temperature condition was more effective and enhanced the applicability of multi-oxidation.Conclusions:The multi oxidation of TOC, TN, and TP was demonstrated by wet chemical oxidation, and the proposed method is expected to secure the sample and reduce the analytic time. However, the more suitable condition to enhance the accuracy of TOC, TN, and TP in the multi-oxidation system should be studied further.

scholarly journals Critical assessment of wet-chemical oxidation synthesis of silicon quantum dots

2020 ◽  
Vol 222 ◽  
pp. 149-165 ◽  
Author(s):  
Jonathan L. Wilbrink ◽  
Chia-Ching Huang ◽  
Katerina Dohnalova ◽  
Jos M. J. Paulusse
Keyword(s):  
Quantum Dots ◽  
Chemical Oxidation ◽  
Critical Assessment ◽  
Magnesium Silicide ◽  
Silicon Quantum Dots ◽  
Wet Chemical ◽  
Oxidation Synthesis

The wet-chemical Si QD synthesis by oxidation of magnesium silicide (Mg2Si) with bromine (Br2) was revisited.

SYNTHESIS AND ELECTRORHEOLOGY OF PHOSPHORIC ACID DOPED POLYANILINE SUSPENSIONS

2005 ◽  
Vol 19 (07n09) ◽  
pp. 1149-1155 ◽  
Author(s):  
C. H. HONG ◽  
H. J. CHOI
Keyword(s):  
Phosphoric Acid ◽  
Electric Fields ◽  
Chemical Structure ◽  
Chemical Oxidation ◽  
Chemical Oxidation Polymerization ◽  
Ft Ir ◽  
Fourier Transform Ir ◽  
Doped Polyaniline ◽  
Er Fluids ◽  
High Voltage Generator

Semiconducting phosphoric acid doped polyaniline ( PANI-H 3 PO 4) particles were synthesized by chemical oxidation polymerization, and their chemical structure and particle size were examined via Fourier transform IR spectroscopy (FT-IR) and scanning electron microscopy (SEM), respectively. Electrorheological (ER) fluids were prepared by dispersing the synthesized PANI-H 3 PO 4 particles in kerosine, and their steady shear rheological properties under applied electric fields were investigated using a rotational rheometer with a high-voltage generator. The PANI-H 3 PO 4 synthesized in this study possesses a typical ER behavior: large increase of shear stress with applied electric field strengths.

scholarly journals Rapid 14C Analysis of Dissolved Organic Carbon in Non-Saline Waters

Radiocarbon ◽  
2016 ◽  
Vol 58 (3) ◽  
pp. 505-515 ◽  
Author(s):  
Susan Q Lang ◽  
Cameron P McIntyre ◽  
Stefano M Bernasconi ◽  
Gretchen L Früh-Green ◽  
Britta M Voss ◽  
...  
Keyword(s):  
Organic Carbon ◽  
Dissolved Organic Carbon ◽  
Freeze Drying ◽  
Saline Water ◽  
Current Method ◽  
Chemical Oxidation ◽  
Volatile Organic ◽  
Saline Waters ◽  
Wet Chemical ◽  
Uv Oxidation

AbstractThe radiocarbon content of dissolved organic carbon (DOC) in rivers, lakes, and other non-saline waters can provide valuable information on carbon cycling dynamics in the environment. DOC is typically prepared for 14C analysis by accelerator mass spectrometry (AMS) either by ultraviolet (UV) oxidation or by freeze-drying and sealed tube combustion. We present here a new method for the rapid analysis of 14C of DOC using wet chemical oxidation (WCO) and automated headspace sampling of CO2. The approach is an adaption of recently developed methods using aqueous persulfate oxidant to determine the δ13C of DOC in non-saline water samples and the 14C content of volatile organic acids. One advantage of the current method over UV oxidation is higher throughput: 22 samples and 10 processing standards can be prepared in one day and analyzed in a second day, allowing a full suite of 14C processing standards and blanks to be run in conjunction with samples. A second advantage is that there is less potential for cross-contamination between samples.

Wet Chemical Oxidation of Silicon Surfaces Prior to the Deposition of All-PECVD AlOx/a-SiNx Passivation Stacks for Silicon Solar Cells

2012 ◽  
Vol 195 ◽  
pp. 310-313 ◽  
Author(s):  
Abdelazize Laades ◽  
Heike Angermann ◽  
Hans Peter Sperlich ◽  
Uta Stürzebecher ◽  
Carlos Alberto Díaz Álvarez ◽  
...  
Keyword(s):  
Solar Cells ◽  
Surface Passivation ◽  
Chemical Vapor ◽  
Chemical Oxidation ◽  
Silicon Surfaces ◽  
Silicon Solar Cells ◽  
Rear Side ◽  
Type Silicon ◽  
Wet Chemical ◽  
P Type

Aluminum oxide (AlOx) is currently under intensive investigation for use in surface passivation schemes in solar cells. AlOx films contain negative charges and therefore generate an accumulation layer on p-type silicon surfaces, which is very favorable for the rear side of p-type silicon solar cells as well as the p+-emitter at the front side of n-type silicon solar cells. However, it has been reported that quality of an interfacial silicon sub-oxide layer (SiOx), which is usually observed during deposition of AlOx on Silicon, strongly impacts the silicon/AlOx interface passivation properties [1]. The present work demonstrates that a convenient way to control the interface is to form thin wet chemical oxides of high quality prior to the deposition of AlOx/a-SiNx:H stacks by the plasma enhanced chemical vapor deposition (PECVD).

Improvement of Silicon Solar Cell Substrates by Wet-Chemical Oxidation Studied by Surface Photovoltage Measurements

2014 ◽  
Vol 219 ◽  
pp. 291-296
Author(s):  
Heike Angermann ◽  
Abdelazize Laades ◽  
Jan Kegel ◽  
Carola Klimm ◽  
Bert Stegemann
Keyword(s):  
Chemical Oxidation ◽  
Layer Growth ◽  
Device Fabrication ◽  
Thin Layers ◽  
Defect States ◽  
Device Structure ◽  
Fixed Charges ◽  
Starting Point ◽  
Wet Chemical ◽  
Substrate Surfaces

The deposition of thin and ultra-thin layers requires extremely clean, smooth and defect-free Silicon (Si) substrate surfaces as starting point. The preparation-induced surface micro-roughness and surface coverage of the substrates often affect the initial layer growth, the morphology or the adhesion of deposited layers. Si device fabrication includes multiple wet cleaning and etching steps involving different oxidizing and etching solutions, which modify the surface electronic properties according to fixed charges and defect states present on the surface. Depending on the details of the device structure, surface conditioning methods have to be carefully optimized to achieve the desired electronic interface properties.

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