Erratum to “Growth of silicon carbide epitaxial layers on 150-mm-diameter wafers using a horizontal hot-wall chemical vapor deposition” [J. Cryst. Growth 381 (2013) 139–143]

2013 ◽  
Vol 383 ◽  
pp. 172 ◽  
Author(s):  
Keiko Masumoto ◽  
Chiaki Kudou ◽  
Kentaro Tamura ◽  
Johji Nishio ◽  
Sachiko Ito ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Layers

Growth of silicon carbide epitaxial layers on 150-mm-diameter wafers using a horizontal hot-wall chemical vapor deposition

2013 ◽  
Vol 381 ◽  
pp. 139-143 ◽  
Author(s):  
Keiko Masumoto ◽  
Chiaki Kudou ◽  
Kentaro Tamura ◽  
Johji Nishio ◽  
Sachiko Ito ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Layers

The Influence of Tri-Defects of Epitaxial Layers on the Performance of 4H-Sic Diodes

2020 ◽  
Vol 1014 ◽  
pp. 33-37
Author(s):  
Ying Xi Niu ◽  
Dong Bo Song ◽  
Ling Sang
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Leakage Current ◽  
Formation Mechanism ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Epitaxial Layers ◽  
Reverse Voltage ◽  
Common Defect

The triangular defect is a common defect in the 4H-SiC epitaxy, which is also one of the killer defects to the 4H-SiC devices. In this paper, the 4H-SiC epitaxial wafer was grown by chemical vapor deposition (CVD). The formation mechanism of triangular defects in silicon carbide epitaxy was analyzed, and the solutions were proposed. Then, the diodes were fabricated on the wafer, and the influence of triangular defects on the forward and reverse I-V characteristics of 4H-SiC diodes was analyzed by tracking the defects map. The results show that the presence of triangular defects can lead to the reduction of the reverse voltage by about 40%, an increase of the leakage current by four orders of magnitude, and an increase of the forward conduction resistance.

Modeling of silicon carbide chemical vapor deposition in a vertical reactor

1999 ◽  
Vol 61-62 ◽  
pp. 172-175 ◽  
Author(s):  
A.N. Vorob’ev ◽  
Yu.E. Egorov ◽  
Yu.N. Makarov ◽  
A.I. Zhmakin ◽  
A.O. Galyukov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor
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