Effect of Wet Etching Parameter on the Diameter and Length of Silicon Nanowires

2011 ◽  
Vol 483 ◽  
pp. 584-588
Author(s):  
Yang He ◽  
Cheng Yu Jiang ◽  
Heng Xu Yin ◽  
Chen Jun ◽  
Wei Zheng Yuan
Keyword(s):  
Silver Nanoparticle ◽  
Silicon Nanowires ◽  
Room Temperature ◽  
Wet Etching ◽  
Solution Temperature ◽  
Etching Time ◽  
Silicon Substrates ◽  
Etching Method

A wet etching method for preparing silicon nanowires on silicon substrates at near room temperature is presented. The effect of experiment parameter on the silver nanoparticle forming including concentration of AgNO3, immersing time and solution temperature, and the effect of etching time on the length of silicon nanowires are investigated. It is concluded that solution temperature has more impact to diameter of silicon nanowires than concentration of AgNO3 and immersing time and longer etching time may result in longer silicon nanowires.

Nanostructure, optical and optoelectronic properties of silver nanoparticle-based chemical etching on monocrystalline silicon for solar cell applications

2021 ◽  
Vol 17 ◽  
Author(s):  
Abdelbasset Bessadok J ◽  
Mohamed Ben Rabha ◽  
F. Abdulraqeb Ahmed Ali ◽  
Salim Mokraoui ◽  
Lotfi Khezami
Keyword(s):  
Solar Cell ◽  
Silver Nanoparticle ◽  
Silicon Nanowires ◽  
Chemical Etching ◽  
Monocrystalline Silicon ◽  
Optoelectronic Properties ◽  
Surface Recombination Velocity ◽  
Optimal Time ◽  
Etching Time ◽  
Effective Lifetime

Introduction: Silver nanoparticle (AgNP)-based chemical etching is applied to produce silicon nanowires (SiNWs) on monocrystalline silicon. Methods: The effect of etching time on the production of silicon nanowires and on optical and optoelectronic properties was studied. Results: Using this approach, surface recombination velocity (Seff) and the effective lifetime (τeff) evolution of SiNWs after passivation were improved, and SiNWs obtained in the optimal time of 20 min, exhibited shallow reflection of 1% in the wavelength range of 300–1100 nm. Conclusion: Thus, passivated solar cell-based SiNWs in an HF/HNO3/H2O solution were essential for increasing the efficiency of solar cell-based SiNWs from 9% to nearly 15%.

scholarly journals Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography

2016 ◽  
Vol 7 ◽  
pp. 1461-1470 ◽  
Author(s):  
Siti Noorhaniah Yusoh ◽  
Khatijah Aisha Yaacob
Keyword(s):  
Surface Roughness ◽  
Silicon Nanowires ◽  
Isopropyl Alcohol ◽  
Etching Rate ◽  
Wet Etching ◽  
Tetramethylammonium Hydroxide ◽  
Etching Time ◽  
Etching Depth ◽  
Force Microscopy ◽  
Afm Lithography

The optimization of etchant parameters in wet etching plays an important role in the fabrication of semiconductor devices. Wet etching of tetramethylammonium hydroxide (TMAH)/isopropyl alcohol (IPA) on silicon nanowires fabricated by AFM lithography is studied herein. TMAH (25 wt %) with different IPA concentrations (0, 10, 20, and 30 vol %) and etching time durations (30, 40, and 50 s) were investigated. The relationships between etching depth and width, and etching rate and surface roughness of silicon nanowires were characterized in detail using atomic force microscopy (AFM). The obtained results indicate that increased IPA concentration in TMAH produced greater width of the silicon nanowires with a smooth surface. It was also observed that the use of a longer etching time causes more unmasked silicon layers to be removed. Importantly, throughout this study, wet etching with optimized parameters can be applied in the design of the devices with excellent performance for many applications.

A Si-based suspended tunnel structure with trapezoidal section by two - step etching

2021 ◽  
Author(s):  
Tieying Ma ◽  
Yipeng Wang ◽  
Jinzhu Zhou
Keyword(s):  
High Sensitivity ◽  
Wet Etching ◽  
High Yield ◽  
Etching Time ◽  
Tunnel Structure ◽  
Etching Method ◽  
Solid Foundation ◽  
Suspended Structure ◽  
Triton X ◽  
Sio2 Support

Abstract Two - step etching method is used to prepare Si-based suspended tunnel structure with trapezoidal section. In the first wet etching, surfactant Triton-X-100 is added to TMAH enchant to inhibit crystal plane characteristics. Bulk Si Rib with trapezoidal cross section is formed, with inclination of side and height being modulated by changing etching time, so as to obtain good stability. After SiO2 support layer is grown by thermal oxidation, pure 25%TMAH is used in the second wet etching to quickly lateral etch and undercut the bulk silicon under the support layer and form a suspended structure along <100> opening. Using additive-no additive two-step etching method, suspended structure with high stability and compressive strength, good insulation characteristics, high yield can be prepared. It lays a solid foundation for the development of high sensitivity photo, thermal, chemical and gas sensors.

The Effect of Catalyst on Carbon Nanotubes (CNTs) Synthesized by Catalytic Chemical Vapor Deposition (CVD) Technique

2011 ◽  
Vol 364 ◽  
pp. 232-237 ◽  
Author(s):  
S.Y. Lim ◽  
M.M. Norani
Keyword(s):  
Carbon Nanotubes ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Dry Etching ◽  
Wet Etching ◽  
Etching Time ◽  
Catalytic Chemical Vapor Deposition ◽  
Catalyst Pretreatment ◽  
Diameter Range

Catalyst plays a crucial role in determining the characteristics of carbon nanotubes (CNTs) produced by using thermal catalytic chemical vapor deposition (CVD). It is essential to investigate how the catalyst preparation affects the characteristics of CNTs because certain application demands specific size for optimum performance. This study reports the effect of the types of catalyst and the duration of the catalyst pre-treatment (wet etching time, dry etching time and ball milling) on the diameter of CNTs. The synthesized CNTs samples were characterized by scanning and transmission electron microscopy and Raman spectroscopy. Wet etching (2M hydrofluoric acid) time was varied from 1 to 2.5 hrs and the diameter range was found to be in the range of 23 to 52 nm. The diameter range for CNTs produced for 3 hrs and 5 hrs of dry etching treatment (with ammonia gas) are 38 to 51 nm and 23 to 48 nm, respectively. The diameter size of CNTs produced using Ni (14 to 25 nm) was found to be smaller than Fe (38 to 51 nm). There is a significant decrease in the diameter of CNTs by prolonging the wet etching period. Shorter and curly shaped CNTs can also be obtained by using Ni as the catalyst. Keywords: chemical vapor deposition, carbon nanotubes, catalyst pretreatment

Photoluminescence of Erbium-Diffused Silicon

1996 ◽  
Vol 422 ◽  
Author(s):  
H. Horiguchi ◽  
T. Kinone ◽  
R. Saito ◽  
T. Kimura ◽  
T. Ikoma
Keyword(s):  
Room Temperature ◽  
Crystalline Silicon ◽  
Luminescence Spectra ◽  
Main Peak ◽  
Silicon Substrates ◽  
Annealing Atmosphere ◽  
Full Width ◽  
Half Maximum ◽  
Strong Luminescence ◽  
Fine Structures

AbstractErbium films are evaporated on crystalline silicon substrates and are thermally diffused into silicon in an Ar+02 or H2 flow. Very sharp Er3+-related luminescence peaks are observed around 1.54 μ m.The main peak as well as the fine structures of the luminescence spectra depend on the annealing atmosphere, suggesting different luminescence centers. The full width at half maximum (FWHM) of the main peaks is ≤ 0.5nm at 20K. Thermal diffusion with Al films on top of the Er films is found to increase the intensity of the Er3+-related peaks greatly. The temperature dependence between 20 K and room temperature is relatively small, and a strong luminescence is obtained at room temperature.

Growth mechanism and characterization of ZnO nano-tubes synthesized using the hydrothermal-etching method

2009 ◽  
Vol 63 (6) ◽  
Author(s):  
Yan Li ◽  
Chuan-Sheng Liu ◽  
Yun-Ling Zou
Keyword(s):  
Room Temperature ◽  
Morphological Analysis ◽  
Diffraction Field ◽  
X Ray Diffraction ◽  
X Ray ◽  
Room Temperature Photoluminescence ◽  
Etching Method ◽  
Nano Rods ◽  
Two Stages

AbstractZnO nano-tubes (ZNTs) have been successfully synthesized via a simple hydrothermal-etching method, and characterized by X-ray diffraction, field emission scanning electron microscopy and room temperature photoluminescence measurement. The as-synthesized ZNTs have a diameter of 500 nm, wall thickness of 20–30 nm, and length of 5 µm. Intensity of the plane (0002) diffraction peak, compared with that of plane (10$$ \bar 1 $$0) of ZNTs, is obviously lower than that of ZnO nano-rods. This phenomenon can be caused by the smaller cross section of plane (0002) of the nano-tubes compared with that of other morphologies. On basis of the morphological analysis, the formation process of nano-tubes can be proposed in two stages: hydrothermal growth and reaction etching process.

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