scholarly journals Metal-semiconductor nanoheterostructures with an AlGaN quantum well and in-situ formed surface Al nanoislands

Author(s):  
E.A. Evropeytsev ◽  
A.N. Semenov ◽  
D.V. Nechaev ◽  
V.N. Jmerik ◽  
V.Kh. Kaibyshev ◽  
...  

AbstractWe report on fabrication and studies of composite heterostuctures consisting of an Al_0.55Ga_0.45N/A_l0.8Ga_0.2N quantum well and surface Al nanoislands, grown by plasma-assisted molecularbeam epitaxy on c-sapphire substrates. The influence of a substrate temperature varied between 320 and 700ºC on the size and density of the deposited Al nanoislands is evaluated. The effect of Al nanoislands on decay kinetics of the quantum well middle-ultraviolet photoluminescence has been investigated by time resolved photoluminescence. The samples with the maximum density of Al nanoislands of 10^8 cm^–2 and lateral dimensions in the range of 100–500 nm demonstrated shortening of the photoluminescence lifetime, induced by interaction of the emitting quantum well and the plasmonic metal particles.

Author(s):  
А.М. Надточий ◽  
С.А. Минтаиров ◽  
Н.А. Калюжный ◽  
М.В. Максимов ◽  
Д.А. Санников ◽  
...  

By using time-correlated single-photon counting time-resolved photoluminescence of quantum-sized heterostructures of different dimensionality was investigated. InGaAs quantum dots, quantum well, and transitionally-dimensional structure — quantum well-dots were grown on GaAs substrates. It was observed, that photoluminescence decay strongly depends on structure dimensionality resulting in decay value of 6,7, and more than 20 ns for quantum dots, well-dots and well, respectively. As we believe localization centers in heterostructures may be responsible for such shortening of photoluminescence lifetime.


Author(s):  
J. Allègre ◽  
P. Lefebvre ◽  
J. Camassel ◽  
B. Beaumont ◽  
Pierre Gibart

Time-resolved photoluminescence spectra have been recorded on three GaN epitaxial layers of thickness 2.5 μm, 7 μm and 16 μm, at various temperatures ranging from 8K to 300K. The layers were deposited by MOVPE on (0001) sapphire substrates with standard AlN buffer layers. To achieve good homogeneities, the growth was in-situ monitored by laser reflectometry. All GaN layers showed sharp excitonic peaks in cw PL and three excitonic contributions were seen by reflectivity. The recombination dynamics of excitons depends strongly upon the layer thickness. For the thinnest layer, exponential decays with τ ~ 35 ps have been measured for both XA and XB free excitons. For the thickest layer, the decay becomes biexponential with τ1 ~ 80 ps and τ2 ~ 250 ps. These values are preserved up to room temperature. By solving coupled rate equations in a four-level model, this evolution is interpreted in terms of the reduction of density of both shallow impurities and deep traps, versus layer thickness, roughly following a L−1 law.


2019 ◽  
Author(s):  
Hao Wu ◽  
Jeffrey Ting ◽  
Siqi Meng ◽  
Matthew Tirrell

We have directly observed the <i>in situ</i> self-assembly kinetics of polyelectrolyte complex (PEC) micelles by synchrotron time-resolved small-angle X-ray scattering, equipped with a stopped-flow device that provides millisecond temporal resolution. This work has elucidated one general kinetic pathway for the process of PEC micelle formation, which provides useful physical insights for increasing our fundamental understanding of complexation and self-assembly dynamics driven by electrostatic interactions that occur on ultrafast timescales.


2020 ◽  
Vol 22 (9) ◽  
pp. 4993-5001 ◽  
Author(s):  
Anna Rosa Ziefuss ◽  
Stefan Reich ◽  
Sven Reichenberger ◽  
Matteo Levantino ◽  
Anton Plech

The structural and energetic pathway of picosecond laser fragmentation of gold colloids has been clarified by time-resolved X-ray scattering.


Author(s):  
A.N. Cartwright ◽  
Paul M. Sweeney ◽  
Thomas Prunty ◽  
David P. Bour ◽  
Michael Kneissl

The presence of piezoelectric fields within p-i-n GaN/InGaN multiple quantum well structures is discussed. Time integrated and time-resolved photoluminescence measurements and theoretical calculations of the effect of these fields is presented. Furthermore, a description of how these fields influence the carrier dynamics and a discussion of how the piezoelectric field effects the design of GaN/InGaN devices is presented.


2016 ◽  
Vol 88 (11) ◽  
pp. 1684-1692 ◽  
Author(s):  
Lukas C. Buelens ◽  
Vladimir V. Galvita ◽  
Hilde Poelman ◽  
Christophe Detavernier ◽  
Guy B. Marin

2012 ◽  
Vol 116 (36) ◽  
pp. 19327-19334 ◽  
Author(s):  
Niklas Grönhagen ◽  
Tommi T. Järvi ◽  
Natalie Miroslawski ◽  
Heinz Hövel ◽  
Michael Moseler

RSC Advances ◽  
2014 ◽  
Vol 4 (103) ◽  
pp. 59379-59386 ◽  
Author(s):  
Sabyasachi Patra ◽  
Debasis Sen ◽  
Ashok K. Pandey ◽  
J. Bahadur ◽  
S. Mazumder ◽  
...  

Growth kinetics of membrane stabilized silver nanoparticles have been studied for the first time with time resolved in situ SAXS. The catalytic application of nanocomposite membranes thus formed has also been explored.


1996 ◽  
Vol 68 (23) ◽  
pp. 3221-3223 ◽  
Author(s):  
Noritaka Usami ◽  
Wugen Pan ◽  
Hiroyuki Yaguchi ◽  
Ryoichi Ito ◽  
Kentaro Onabe ◽  
...  

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