scholarly journals Исследование методов текстурирования светодиодов на основе гетероструктур AlGaAs/GaAs

2021 ◽  
Vol 55 (11) ◽  
pp. 1086
Author(s):  
А.В. Малевская ◽  
Н.Д. Ильинская ◽  
Н.А. Калюжный ◽  
Д.А. Малевский ◽  
Ю.М. Задиранов ◽  
...  
Keyword(s):  
Solid Solution ◽  
Chemical Etching ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Bragg Reflectors ◽  
Plasma Chemical ◽  
Light Emitting ◽  
Plasma Chemical Etching ◽  
Electroluminescence Intensity ◽  
Ir Light

Investigations of methods for texturing the light-emitting surface of IR light-emitting diodes (LEDs) (wavelength 850 nm) based on AlGaAs/GaAs heterostructures with Bragg reflectors have been carried out. Developed were methods of liquid and plasma-chemical etching of solid solution for creating peaks (pyramids) of different form, 0.2–1.5 µm height. Estimation of the effect of texturing methods and also configuration of peaks on the light-emitting diode electroluminescence intensity has been performed. The increase of the electroluminescence intensity by 25% has been achieved.

scholarly journals Unravelling the electron injection/transport mechanism in organic light-emitting diodes

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Tsubasa Sasaki ◽  
Munehiro Hasegawa ◽  
Kaito Inagaki ◽  
Hirokazu Ito ◽  
Kazuma Suzuki ◽  
...  
Keyword(s):  
Work Function ◽  
Transport Mechanism ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Electron Injection ◽  
Organic Light Emitting Diodes ◽  
Light Emitting ◽  
Organic Light Emitting Diode ◽  
Organic Light ◽  
Materials Used

AbstractAlthough significant progress has been made in the development of light-emitting materials for organic light-emitting diodes along with the elucidation of emission mechanisms, the electron injection/transport mechanism remains unclear, and the materials used for electron injection/transport have been basically unchanged for more than 20 years. Here, we unravelled the electron injection/transport mechanism by tuning the work function near the cathode to about 2.0 eV using a superbase. This extremely low-work function cathode allows direct electron injection into various materials, and it was found that organic materials can transport electrons independently of their molecular structure. On the basis of these findings, we have realised a simply structured blue organic light-emitting diode with an operational lifetime of more than 1,000,000 hours. Unravelling the electron injection/transport mechanism, as reported in this paper, not only greatly increases the choice of materials to be used for devices, but also allows simple device structures.

Electrically driven single microribbon based near-infrared exciton-polariton light-emitting diode

CrystEngComm ◽  
2021 ◽  
Author(s):  
Mingming Jiang ◽  
Fupeng Zhang ◽  
Kai Tang ◽  
Peng Wan ◽  
Caixia Kan
Keyword(s):  
High Performance ◽  
Near Infrared ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Light Sources ◽  
Coherent Light ◽  
Light Emitting ◽  
Exciton Polaritons ◽  
Laser Devices

Achieving electrically-driven exciton-polaritons has drawn substantial attention toward developing ultralow-threshold coherent light sources, containing polariton laser devices and high-performance light-emitting diodes (LEDs). In this work, we demonstrate an electrically driven...

scholarly journals The Optical Properties of InGaN/GaN Nanorods Fabricated on (-201) β-Ga2O3 Substrate for Vertical Light Emitting Diodes

Photonics ◽  
2021 ◽  
Vol 8 (2) ◽  
pp. 42
Author(s):  
Jie Zhao ◽  
Weijiang Li ◽  
Lulu Wang ◽  
Xuecheng Wei ◽  
Junxi Wang ◽  
...  
Keyword(s):  
Stark Effect ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Strain Relaxation ◽  
Blue Shift ◽  
Peak Position ◽  
Excitation Power ◽  
Light Extraction Efficiency ◽  
Excitation Power Density ◽  
Light Emitting

We fabricated InGaN/GaN nanorod light emitting diode (LED) on (-201) β-Ga2O3 substrate via the SiO2 nanosphere lithography and dry-etching techniques. The InGaN/GaN nanorod LED grown on β-Ga2O3 can effectively suppress quantum confined Stark effect (QCSE) compared to planar LED on account of the strain relaxation. With the enhancement of excitation power density, the photoluminescence (PL) peak shows a large blue-shift for the planar LED, while for the nanorod LED, the peak position shift is small. Furthermore, the simulations also show that the light extraction efficiency (LEE) of the nanorod LED is approximately seven times as high as that of the planar LED. Obviously, the InGaN/GaN/β-Ga2O3 nanorod LED is conducive to improving the optical performance relative to planar LED, and the present work may lay the groundwork for future development of the GaN-based vertical light emitting diodes (VLEDs) on β-Ga2O3 substrate.

scholarly journals Experimental studies of plasma-chemical etching of glass when manufacturing diffraction and hologram optical elements

2012 ◽  
Vol 12 (5) ◽  
Author(s):  
Sergey Odinokov ◽  
Gaik Sagatelyan ◽  
Anton Goncharov ◽  
Mikhail Kovalev ◽  
Artem Solomashenko ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Experimental Studies ◽  
Plasma Chemical ◽  
Optical Elements ◽  
Plasma Chemical Etching

Combination of chemical etching of gold nanoclusters with aggregation-induced emission for preparation of new phosphors for the development of UV-driven phosphor-converted white light-emitting diodes

2016 ◽  
Vol 4 (48) ◽  
pp. 11482-11487 ◽  
Author(s):  
Xin Lu ◽  
Tao Wang ◽  
Tong Shu ◽  
Xuanhui Qu ◽  
Xueji Zhang ◽  
...  
Keyword(s):  
White Light ◽  
Chemical Etching ◽  
Light Emitting Diodes ◽  
Gold Nanoclusters ◽  
Light Emitting ◽  
Aggregation Induced Emission ◽  
White Light Emitting Diodes ◽  
Induced Aggregation

The preparation of white light-emitting phosphors via TECP-induced etching of GNCs@BSA and Cd2+-induced aggregation, followed by grinding with GNCs@BSA.

Efficient and controllable photoluminescence in novel solid solution Ca1−xSrxHf4(PO4)6:Eu2+ phosphors with high thermal stability for white light emitting diodes

CrystEngComm ◽  
2018 ◽  
Vol 20 (31) ◽  
pp. 4383-4394 ◽  
Author(s):  
Shuangyu Xin ◽  
Miao Gao ◽  
Chuang Wang ◽  
Xuejiao Wang ◽  
Ge Zhu ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Solid Solution ◽  
Quantum Efficiency ◽  
White Light ◽  
Light Emitting Diodes ◽  
High Thermal Stability ◽  
Photoluminescence Properties ◽  
Light Emitting ◽  
White Light Emitting Diodes

The tunable photoluminescence properties of (Ca,Sr)Hf4(PO4)6:Eu2+ solid solution phosphors with high thermal stability and quantum efficiency were investigated.

Investigation on infrared electroluminescence from Er3+-doped Tb2O3 light-emitting diodes

2021 ◽  
pp. 2050005
Author(s):  
Hao Li ◽  
Shenwei Wang ◽  
Liyuan Bai ◽  
Kai Ou ◽  
Yanwei Zhang ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Energy Transfer ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Doping Concentration ◽  
Light Emitting Diodes ◽  
Radio Frequency Magnetron Sputtering ◽  
Light Emitting ◽  
Structure And Morphology ◽  
Electroluminescence Intensity

Tb2O3:Er light-emitting diodes were prepared by radio-frequency magnetron sputtering method and the EL performance of the devices were studied. The crystal structure and morphology of the annealed films were investigated by XRD and SEM, respectively. The EL spectrum was achieved and the EL principle was discussed. Six emission peaks of Er[Formula: see text] located at 402, 517, 548, 649, 691, and 1,538[Formula: see text]nm were observed, achieving energy transfer from Tb[Formula: see text] to Er[Formula: see text]. In order to study the effect of Er+ doping concentration, the doping concentrations of Tb2O3:Er films were from 5[Formula: see text]at.% to 20[Formula: see text]at.%. The effect on electroluminescence intensity of doping concentration was investigated and the optimal doped concentration was 15[Formula: see text]at. %.

FREQUENCY TRIMMING OF THE STW RESONATORS WITH WORKING FREQUENCY UP TO 1 GHZ

2021 ◽  
pp. 79-85
Author(s):  
A. N. Kuznetsov ◽  
S. A. Doberstein ◽  
I. V. Veremeev
Keyword(s):  
Quality Factor ◽  
Chemical Etching ◽  
Single Port ◽  
Frequency Range ◽  
Plasma Chemical ◽  
Etching Method ◽  
Plasma Chemical Etching ◽  
Working Frequency ◽  
Frequency Trimming

This paper presents the data for frequency trimming of the single port STW resona-tors in a frequency range of 500–1000 MHz by plasma chemical etching method. The main parameters of resonators after frequency trimming are given: frequency tolerance <±100·10–6, quality factor of 8600–9500, equivalent elements needed for use of the STW resonators.

Dual-Emission Eu-doped Ca2−xSrxPN3 Nitridophosphate Phosphors Prepared by Hot Isostatic Press

2021 ◽  
Author(s):  
Mu-Huai Fang ◽  
Hsi-Ping Hsueh ◽  
Thangaraji Vasudevan ◽  
Wen-Tse Huang ◽  
Zhen Bao ◽  
...  
Keyword(s):  
Solid Solution ◽  
Light Emitting Diodes ◽  
Dual Emission ◽  
Light Emitting

Nitridophosphates are regarded as an emerging compound class with applications in phosphor-converted light-emitting diodes. In this work, we aim to develop a series of Ca2−xSrxPN3:Eu2+ nitridophosphate phosphors through a solid-solution...

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