XVII Межгосударственная конференция Термоэлектрики и их применения --- 2021" (ISCTA 2021 Санкт-Петербург, 13-16 сентября, 2021 Получение и исследование омических контактов с высокой адгезией к термоэлементам

The factors determining the adhesive strength of film coatings are considered. The functions of contacts in thermoelements used in a wide temperature range were determined. It was established that the adhesive strength of contact is a limiting factor in the mechanical strength of a thermoelement. A method of vacuum sputtering of thin-film contacts was proposed, including the surface treatment of samples of thermoelectric materials. The presence of a transition layer in the area of the metal - thermoelectric material contact, formed during the interaction of the metal with elements of the thermoelectric material, was established. The dependence of the adhesive strength of film contact on roughness of surface on which they formed was established. Thermal stable contacts for thermoelements with low resistivity of the order of 10-9 Ohm•m2 and high adhesion strength of at least 12 MPa were obtained by ion-plasma sputtering.

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High-adhesion unlayered films: physical and technological basis of their production

Journal of Physics and Electronics ◽

10.15421/332023 ◽

2020 ◽

Vol 28 (2) ◽

pp. 75-78

Author(s):

V. F. Bashev ◽

S. I. Ryabtsev

Keyword(s):

Q Factor ◽

Adhesion Properties ◽

Cu Films ◽

Technological Basis ◽

Potential Value ◽

Plasma Sputtering ◽

Ion Plasma ◽

High Adhesion ◽

Film Adhesion ◽

Mechanical Separation

Using the modernized three-electrode ion-plasma sputtering method, high-adhesion Cu-films without underlayer were obtained. Films were deposited on glass-ceramic (sitall) substrates. The film thickness was ~500 nm. In this case, the calculated cooling rate reached ~ 1012–1014 K/s. The adhesion properties of Cu films were investigated by the standard method of mechanical separation of the film from the substrate – the “fungus” method. It is established that such film adhesion is more than 20 MPa. It is determined that the obtained high adhesion depends on bias potential value. Using these Cu films in strip resonators without a sublayer makes it possible to increase their Q-factor by 1.5–1.7 times and thereby significantly reduce the resulting operating noise.

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Physical properties and structure of vapor-quenched immiscible alloys

Journal of Physics and Electronics ◽

10.15421/331807 ◽

2018 ◽

Vol 26 (1) ◽

pp. 45-52

Author(s):

V. F. Bashev ◽

N. A. Kutseva ◽

O. I. Kushnerov ◽

S. I. Ryabtsev ◽

S. N. Antropov

Keyword(s):

Thin Film ◽

Electrical Resistivity ◽

Crystal Lattices ◽

Amorphous Phases ◽

Plasma Sputtering ◽

Ion Plasma ◽

Nanocrystalline And Amorphous ◽

Constant Rate ◽

Thermally Processed ◽

Hysteretic Magnetic Properties

The method of modernized ion-plasma sputtering produced metastable states, including nanocrystalline and amorphous phases in films of Fe-Ag, Fe-Bi, Fe-Ag-Bi, Fe-Co-Ag and Ni-Ag alloys whose components do not mixed in the liquid state. The periods of the crystal lattices and the dimensions of the crystallites of the nonequilibrium phases in the fresh-sputtered state and after the heating are determined. The temperatures of the beginning and the end of the decomposition of metastable phases are established when heated at a constant rate. The electric and hysteretic magnetic properties of films in freshly dusted and thermally processed states are measured. The compositions and conditions for obtaining films with low values of the temperature coefficient of electrical resistivity (~ 10-5 K-1) and high coercive force (HC ~ 150 kA/m) are established. Such films can be promising for use as thin-film precision resistors and magnetic information carriers with an increased recording density.

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Structure and Vibrational Spectra of thin Films β-Ga2O3

Фізика і хімія твердого тіла ◽

10.15330/pcss.17.4.515-519 ◽

2016 ◽

Vol 17 (4) ◽

pp. 515-519

Author(s):

O.M. Bordun ◽

M.V. Partyka ◽

I.I. Medvid ◽

I.Yo. Kukharskyy ◽

V.V. Ptashnyk ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Phase Composition ◽

High Frequency ◽

Quartz Substrate ◽

Plasma Sputtering ◽

Ir Reflection ◽

Ion Plasma ◽

Fused Quartz ◽

Structure Phase

The structure, phase composition and surface morphology of thin films b-Ga2O3, obtained by high-frequency ion-plasma sputtering, after annealing at different atmosphere was investigated. The spectra of IR reflection of system thin film b-Ga2O3 - fused quartz substrate υ-SiO2 in region 400–1600 cm-1 at 295 K were measured. The peaks in the spectrum of films b-Ga2O3, associated with vibration of Ga – O fragments in structural tetrahedral GaO4 and octahedral GaO6 complexes was interpreted.

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