scholarly journals Physical properties and structure of vapor-quenched immiscible alloys

2018 ◽  
Vol 26 (1) ◽  
pp. 45-52
Author(s):  
V. F. Bashev ◽  
N. A. Kutseva ◽  
O. I. Kushnerov ◽  
S. I. Ryabtsev ◽  
S. N. Antropov
Keyword(s):  
Thin Film ◽  
Electrical Resistivity ◽  
Crystal Lattices ◽  
Amorphous Phases ◽  
Plasma Sputtering ◽  
Ion Plasma ◽  
Nanocrystalline And Amorphous ◽  
Constant Rate ◽  
Thermally Processed ◽  
Hysteretic Magnetic Properties

The method of modernized ion-plasma sputtering produced metastable states, including nanocrystalline and amorphous phases in films of Fe-Ag, Fe-Bi, Fe-Ag-Bi, Fe-Co-Ag and Ni-Ag alloys whose components do not mixed in the liquid state. The periods of the crystal lattices and the dimensions of the crystallites of the nonequilibrium phases in the fresh-sputtered state and after the heating are determined. The temperatures of the beginning and the end of the decomposition of metastable phases are established when heated at a constant rate. The electric and hysteretic magnetic properties of films in freshly dusted and thermally processed states are measured. The compositions and conditions for obtaining films with low values of the temperature coefficient of electrical resistivity (~ 10-5 K-1) and high coercive force (HC ~ 150 kA/m) are established. Such films can be promising for use as thin-film precision resistors and magnetic information carriers with an increased recording density.

scholarly journals Thermodynamic and kinetic features of the formation of amorphous state in films during quenching from the vapor state

2021 ◽  
Vol 29 (1) ◽  
pp. 57-60
Author(s):  
V. F. Bashev ◽  
S. I. Ryabtsev ◽  
F. F. Dotsenko
Keyword(s):  
Amorphous State ◽  
Effective Rate ◽  
Vapor State ◽  
Amorphous Phases ◽  
Plasma Sputtering ◽  
Ion Plasma ◽  
Nanocrystalline And Amorphous ◽  
Good Agreement ◽  
Kinetic Features

The method of modernized ion-plasma sputtering produced metastable states, including nanocrystalline and amorphous phases in films, even in alloys whose components do not mixed in the liquid state. The effective rate of energy relaxation at different modes of precipitation is theoretically estimated to be 1012 -1014 K/s during ion-plasma sputtering of atoms. On thermodynamic and kinetic states, different active and passive parameters for amorphization during sputtering are analyzed. The receiving expressions are in good agreement with the experimental results and contribute to the determination of further steps to obtain an amorphous state.

scholarly journals The effect of Bi additives on the properties of Fe-Pt films

2019 ◽  
Vol 27 (2) ◽  
pp. 47-50
Author(s):  
V. F. Bashev ◽  
N. A. Kutseva ◽  
O. I. Kushnerov ◽  
S. I. Ryabtsev ◽  
O. V. Yelina ◽  
...  
Keyword(s):  
Coercive Force ◽  
X Ray Diffraction ◽  
Ceramic Substrates ◽  
Amorphous Phases ◽  
Sputtered Films ◽  
Plasma Sputtering ◽  
Ion Plasma ◽  
Metastable Structures ◽  
Nanocrystalline And Amorphous ◽  
Pt Films

Using the modernized three-electrode ion-plasma sputtering method, homogeneous thin films of FePt and Fe (Pt/Bi) were obtained. Films were deposited on NaCl and glass-ceramic substrates. The film thickness was 120-530 nm. In this case, the calculated cooling rate reached ~ 1012–1014 K/s. The structure of the FePt and Fe (Pt/Bi) films was investigated using X-ray diffraction and electron microscopy methods. It was established that metastable phases were formed in freshly sputtered films, including a supersaturated solid solution, a nanocrystalline and amorphous phases. It was determined that the obtained metastable structures are stable when heated to 540-880 K, depending on the composition. It was established that Bi additives significantly reduce the coercive force of films in the as-sputtered state. It was shown that a heat treatment increased the coercive force up to 36 kA/m in FePt films and up to 10 kA/m in Fe (Pt/Bi) films. The composition of Fe (Pt/Bi) films with a small value of the temperature coefficient of resistance (TCR ~3·10-5 K-1) was determined.

scholarly journals XVII Межгосударственная конференция Термоэлектрики и их применения --- 2021" (ISCTA 2021 Санкт-Петербург, 13-16 сентября, 2021 Получение и исследование омических контактов с высокой адгезией к термоэлементам

2021 ◽  
Vol 55 (12) ◽  
pp. 1097
Author(s):  
М.Ю. Штерн ◽  
А.О. Козлов ◽  
Ю.И. Штерн ◽  
М.С. Рогачев ◽  
Е.П. Корчагин ◽  
...  
Keyword(s):  
Thin Film ◽  
Thermoelectric Material ◽  
Adhesive Strength ◽  
Limiting Factor ◽  
Film Coatings ◽  
Plasma Sputtering ◽  
Ion Plasma ◽  
High Adhesion ◽  
Material Contact ◽  
Thermal Stable

The factors determining the adhesive strength of film coatings are considered. The functions of contacts in thermoelements used in a wide temperature range were determined. It was established that the adhesive strength of contact is a limiting factor in the mechanical strength of a thermoelement. A method of vacuum sputtering of thin-film contacts was proposed, including the surface treatment of samples of thermoelectric materials. The presence of a transition layer in the area of the metal - thermoelectric material contact, formed during the interaction of the metal with elements of the thermoelectric material, was established. The dependence of the adhesive strength of film contact on roughness of surface on which they formed was established. Thermal stable contacts for thermoelements with low resistivity of the order of 10-9 Ohm•m2 and high adhesion strength of at least 12 MPa were obtained by ion-plasma sputtering.

scholarly journals ION-PLASMA DEPOSITION OF THIN QUASICRYSTALLINE Al-Cu-Fe AND Al-Cu-Co FILMS

2020 ◽  
pp. 145-150
Author(s):  
S.I. Ryabtsev ◽  
O.V. Sukhova
Keyword(s):  
Electrical Resistivity ◽  
Plasma Deposition ◽  
Coherent Scattering ◽  
Room Temperature Resistivity ◽  
Ceramic Substrates ◽  
X Ray ◽  
Plasma Sputtering ◽  
Ion Plasma ◽  
Transmission Electron ◽  
Cu Film

Al-Cu-Fe and Al-Co-Cu thin films were firstly deposited on sodium chloride or glass-ceramic substrates by modernized method of three-electrode ion-plasma sputtering. The nominal compositions of the films were chosen in the regions of quasicrystalline phases formation. The as-sputtered films were typically 85 to 260 nm thick. The films were annealed at temperatures ranging from 873 to 923 K for 10 min…3 h. The structure of films was studied by scanning and transmission electron microscopy and X-ray analysis. Electrical properties were determined by a fourprobe method. The as-deposited Al-Cu-Fe film was found to consist of isolated quasicrystalline nanoparticles of icosahedral i-phase. With substitution of Fe for Co in Al-Co-Cu film, X-ray amorphous phase and only traces of quasicrystalline decagonal D-phase were revealed. After annealing, the films were predominately quasicrystalline due to transformation of metallic phases into quasicrystalline. At the same time, the size of coherent scattering regions for quasicrystals increased by two times from ~ 3 to 6 nm. Measurements of electrical resistivity showed that no phase transformations occurred in Al-Cu-Fe film up to 723 K and in Al-Co-Cu film up to 640 К. With following increase in temperature, electrical resistivity of Al-Cu-Fe film increased by six orders of magnitude (up to 6∙107 Ω/sq). In contrast, electrical resistivity of Al-Co-Cu film decreased by ~ 2 times. After cooling to room temperature, resistivity of Al-Cu-Fe film equaled to ~ 3∙105 Ω/sq and that of Al-Co-Cu film – to 8.7 Ω/sq. We concluded that Al-Cu-Fe thin film is more suitable candidate for application as precise high-ohmic materials.

scholarly journals Structure and Vibrational Spectra of thin Films β-Ga2O3

2016 ◽  
Vol 17 (4) ◽  
pp. 515-519
Author(s):  
O.M. Bordun ◽  
M.V. Partyka ◽  
I.I. Medvid ◽  
I.Yo. Kukharskyy ◽  
V.V. Ptashnyk ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Phase Composition ◽  
High Frequency ◽  
Quartz Substrate ◽  
Plasma Sputtering ◽  
Ir Reflection ◽  
Ion Plasma ◽  
Fused Quartz ◽  
Structure Phase

The structure, phase composition and surface morphology of thin films b-Ga2O3, obtained by high-frequency ion-plasma sputtering, after annealing at different atmosphere was investigated. The spectra of IR reflection of system thin film b-Ga2O3 - fused quartz substrate υ-SiO2 in region 400–1600 cm-1 at 295 K were measured. The peaks in the spectrum of films b-Ga2O3, associated with vibration of Ga – O fragments in structural tetrahedral GaO4 and octahedral GaO6 complexes was interpreted.

INFLUENCE OF THE COMPOSITION OF THE RADIO-FREQUENCY SPUTTERING ATMOSPHERE ON THE DENSITY OF STATES AND INTERBAND LIGHT ABSORPTION IN THIN Y2O3 FILMS

2021 ◽  
Vol 88 (6) ◽  
pp. 881-886
Author(s):  
O. M. Bordun ◽  
I. O. Bordun ◽  
I. M. Kofliuk ◽  
I. Yo. Kukharskyy ◽  
I. I. Medvid
Keyword(s):  
Absorption Band ◽  
Density Of States ◽  
Interband Absorption ◽  
Long Wavelength ◽  
Plasma Sputtering ◽  
Radio Frequency Sputtering ◽  
Ion Plasma ◽  
Quasi Classical Approximation ◽  
Heavily Doped ◽  
Interband Light Absorption

The long-wavelength edge of the fundamental absorption band of thin Y2O3 films obtained by radiofrequency ion-plasma sputtering is investigated. The edge of interband absorption after annealing of the films in an atmosphere of argon, oxygen, or a mixture of these gases is shown to be approximated well by the Urbach empirical rule. Diffractograms of the obtained films were studied and a model of a heavily doped or defective semiconductor in the quasi-classical approximation was used to analyze the experimental results. This model allows determining the radius of the basic electronic state, the screening radius, and the rootmean-square potential depending on the sputtering atmosphere.

scholarly journals Physical model of «substrate-coating» system structuring in complex modification processes of surface layers in working parts of dies and press molds

2018 ◽  
Vol 2018 (11) ◽  
pp. 35-41
Author(s):  
Олег Морозов ◽  
Oleg Morozov ◽  
Валерий Кокорин ◽  
Valeriy Kokorin ◽  
Владимир Табаков ◽  
...  
Keyword(s):  
Plastic Deformation ◽  
Physical Model ◽  
Cold Plastic Deformation ◽  
Coating System ◽  
Resistant Steel ◽  
Surface Layers ◽  
Heat Resistant Steel ◽  
Plasma Sputtering ◽  
Ion Plasma ◽  
Wear Coatings

Basic methods to increase durability of die working parts including processes of cold plastic deformation at anti-wear coatings application by a method of ion-plasma sputtering are considered. A physical model of cold plastic deformation of samples made of heat-resistant steel H12M is presented.

scholarly journals Применение покрытий AlN для защиты поверхности гетероструктур системы AlGaAs/GaAs от взаимодействия с атмосферным кислородом

2020 ◽  
Vol 46 (6) ◽  
pp. 16
Author(s):  
Е.В. Фомин ◽  
А.Д. Бондарев ◽  
И.П. Сошников ◽  
N.B. Bercu ◽  
L. Giraudet ◽  
...  
Keyword(s):  
Protective Coatings ◽  
Residual Pressure ◽  
Aluminum Oxynitride ◽  
Effective Protection ◽  
Pure Nitrogen ◽  
Plasma Sputtering ◽  
Laser Heterostructures ◽  
Ion Plasma ◽  
Thin Aluminum ◽  
Film Substrate

The paper presents the results of the synthesis of thin aluminum nitride films by reactive ion-plasma sputtering and the study of their properties with the aim of using as the protective coatings for the high-power AlxGa1-xAs/GaAs semiconductor laser heterostructures. EDS studies and ellipsometry showed that at a residual pressure in the chamber of the order of ~10-5 Torr, a layer of aluminum oxynitride is formed in the films. In this case, the film-substrate heterointerface can undergo oxidation. However, AlN films with a thickness of the order of 100 nm grown in a pure nitrogen medium with a residual pressure of ~10-7 Torr apparently do not contain oxygen, and can reliably prevent its penetration into the heterointerface region. Potentially, they can serve as effective protection for oxidation sensitive heterostructures.

scholarly journals Топография поверхности и оптические характеристики тонких пленок AlN на подложке GaAs (100), полученных методом реактивного ионно-плазменного распыления

2019 ◽  
Vol 45 (5) ◽  
pp. 38
Author(s):  
Е.В. Фомин ◽  
А.Д. Бондарев ◽  
A.I. Rumyantseva ◽  
T. Maurer ◽  
Н.А. Пихтин ◽  
...  
Keyword(s):  
Atomic Force Microscopy ◽  
Refractive Index ◽  
Surface Structure ◽  
Optical Characteristics ◽  
Process Conditions ◽  
Antireflection Coatings ◽  
Force Microscopy ◽  
Plasma Sputtering ◽  
Atomic Force ◽  
Ion Plasma

AbstractA study of the surface topography and optical characteristics of thin AlN films used as passivating and antireflection coatings deposited on n -GaAs (100) substrates by reactive ion-plasma sputtering is reported. It was found that the process conditions affect the structure and the optical characteristics of the films, which makes it possible to obtain coatings with prescribed parameters. An analysis of the results furnished by ellipsometry and atomic-force microscopy of the surface shows that the refractive index of the films is correlated with the surface structure.

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