scholarly journals Влияние висмута на структурное совершенство и люминесцентные свойства тонкопленочных упругонапряженных гетероструктур Al-=SUB=-x-=/SUB=-In-=SUB=-y-=/SUB=-Ga-=SUB=-1-x-y-=/SUB=-Bi-=SUB=-z-=/SUB=-Sb-=SUB=-1-z-=/SUB=-/GaSb

2018 ◽  
Vol 60 (7) ◽  
pp. 1277 ◽  
Author(s):  
Д.Л. Алфимова ◽  
М.Л. Лунина ◽  
Л.С. Лунин ◽  
А.С. Пащенко ◽  
А.Е. Казакова
Keyword(s):  
Temperature Gradient ◽  
Luminescent Properties ◽  
Optimal Parameters ◽  
Structural Perfection ◽  
Liquid Zone ◽  
Temperature Range ◽  
High Structural Perfection ◽  
Bismuth Concentration ◽  
Zone Recrystallization

AbstractThe effect of bismuth on the structural perfection and the luminescent properties of Al_ x In_ y Ga_1– x – y Bi_ z Sb_1– z /GaSb heterostructures has been studied. The optimal parameters of the process of zone recrystallization with temperature gradient at which epitaxial AlInGaBiSb layers have the minimum roughness and high structural perfection have been revealed: temperature gradient 1 ≤ G ≤ 30 K/cm, the liquid zone thickness 60 ≤ l ≤ 100 μm, the temperature range 773 K ≤ T ≤ 873 K, and bismuth concentration 0.3–0.4 mol fraction.

Growing of AlInGaAsP Solid Solutions on InP Substrates for Photovoltaic Converters

2018 ◽  
Vol 284 ◽  
pp. 188-193
Author(s):  
L.S. Lunin ◽  
M.L. Lunina ◽  
A.E. Kazakova
Keyword(s):  
Temperature Gradient ◽  
Solid Solutions ◽  
Gradient Field ◽  
Recrystallization Process ◽  
Optimal Parameters ◽  
Structural Perfection ◽  
Zone Recrystallization ◽  
Growing Conditions ◽  
Inp Substrates

The article contains a description of various growing conditions for isoparametric heterostructures based on InP. It is shown that the structural perfection of solid solutions grown on InP substrates is influenced by parameters, such as the temperature of the epitaxy process, the temperature gradient, and the composition and thickness of the liquid zone. By analyzing the quality of the surface and the structural perfection of isoparametric AlGaInAsP solid solutions, based on InP, optimal parameters of the zone recrystallization process in the temperature gradient field (TGZR), at which the epitaxial films had minimal roughness and high crystalline perfection, were found.

Study of Properties of Multicomponent Heterostructures Based on AIIIBV Compounds

2017 ◽  
Vol 265 ◽  
pp. 728-733 ◽  
Author(s):  
M.L. Lunina ◽  
A.E. Kazakova ◽  
D.A. Arustamyan
Keyword(s):  
Temperature Gradient ◽  
Complex Analysis ◽  
Lattice Parameters ◽  
Epitaxial Layers ◽  
Structural Perfection ◽  
Gradient Zone ◽  
Substrate Orientation ◽  
Zone Recrystallization

Complex analysis of the quality of the surface of the multicomponent epitaxial layers AIIIBV compounds grown at the different conditions of temperature gradient zone recrystallization was performed. Main parameters that determine the quality of the surface and structural perfection of multicomponent heterostructures AlInGaPAs / GaAs have been found: the temperature gradient, the composition of the solution-melt, subcooling, matching the lattice parameters and the CTE of the layer and the substrate, the substrate orientation.

scholarly journals Варизонные гетероструктуры Al-=SUB=-x-=/SUB=-In-=SUB=-y-=/SUB=-Ga-=SUB=-1-x-y-=/SUB=-P-=SUB=-z-=/SUB=-As-=SUB=-1-z-=/SUB=-/GaAs для фотоэлектрических преобразователей

2021 ◽  
Vol 47 (20) ◽  
pp. 27
Author(s):  
Л.С. Лунин ◽  
М.Л. Лунина ◽  
Д.Л. Алфимова ◽  
А.С. Пащенко ◽  
Н.А. Яковенко ◽  
...  
Keyword(s):  
Temperature Gradient ◽  
Band Gap ◽  
Solid Solutions ◽  
Energy Band ◽  
Maximum Energy ◽  
Energy Band Gap ◽  
Technological Parameters ◽  
Gradient Zone ◽  
Liquid Zone ◽  
Zone Recrystallization

The AlxInyGa1-x-yPzAs1-z/GaAs graded-gap heterostructures were grown by the temperature gradient zone recrystallization with a liquid zone reciprocating, where energy band gap varied from 1.43 to 2.2 eV. The influence of technological parameters on the varying in the energy band gap of the grown AlxInyGa1-x-yPzAs1-z/GaAs solid solutions is investigated. In the p-AlxInyGa1-x-yPzAs1-z/n-GaAs heterostructure, the maximum energy band gap gradient of 10490 eV/cm is reached, and an increase in the external quantum efficiency is shown in the wavelength range of 500-900 nm.

scholarly journals Влияние висмута на свойства упругонапряженных гетероструктур AlGaInAsP<Bi>/InP

2019 ◽  
Vol 53 (8) ◽  
pp. 1110
Author(s):  
М.Л. Лунина ◽  
Л.С. Лунин ◽  
Д.Л. Алфимова ◽  
А.С. Пащенко ◽  
Э.М. Данилина ◽  
...  
Keyword(s):  
Liquid Phase ◽  
Quantum Yield ◽  
Temperature Gradient ◽  
Indium Phosphide ◽  
Luminescence Properties ◽  
Gradient Field ◽  
Epitaxial Layers ◽  
Structural Perfection ◽  
External Quantum Yield

AbstractThe results of growing elastically stressed AlGaInAsP〈Bi〉 thin epitaxial layers from the liquid phase on indium phosphide substrates in a temperature-gradient field are discussed. The effect of bismuth on the structural perfection, the luminescence properties, and the external quantum yield of AlGaInAsP〈Bi〉/InP heterostructures is investigated.

Trends in the kinetic and magnetic properties of Pb0.8Sn0.2Te single crystals of high structural perfection

1999 ◽  
Vol 41 (10) ◽  
pp. 1604-1607 ◽  
Author(s):  
M. V. Radchenko ◽  
G. V. Lashkarev ◽  
E. I. Slyn’ko ◽  
A. P. Malysheva
Keyword(s):  
Magnetic Properties ◽  
Single Crystals ◽  
Structural Perfection ◽  
High Structural Perfection

scholarly journals Dynamical X-ray diffraction imaging of voids in dislocation-free high-purity germanium single crystals

2020 ◽  
Vol 53 (4) ◽  
pp. 880-884 ◽  
Author(s):  
Kevin-P. Gradwohl ◽  
Andreas N. Danilewsky ◽  
Melissa Roder ◽  
Martin Schmidbauer ◽  
József Janicskó-Csáthy ◽  
...  
Keyword(s):  
Single Crystals ◽  
High Purity ◽  
Direct Evidence ◽  
X Ray Diffraction ◽  
Structural Perfection ◽  
X Ray ◽  
High Purity Germanium ◽  
High Structural Perfection ◽  
Diffraction Imaging ◽  
General Method

White-beam X-ray topography has been performed to provide direct evidence of micro-voids in dislocation-free high-purity germanium single crystals. The voids are visible because of a dynamical diffraction contrast. It is shown that voids occur only in dislocation-free parts of the crystal and do not show up in regions with homogeneous and moderate dislocation density. It is further suggested that the voids originate from clustering of vacancies during the growth process. A general method is proposed to verify the presence of voids for any crystalline material of high structural perfection.

scholarly journals Тонкопленочные гетероструктуры In-=SUB=-x-=/SUB=-Al-=SUB=-y-=/SUB=-Ga-=SUB=-1-x-y-=/SUB=-As-=SUB=-z-=/SUB=-Sb-=SUB=-1-z-=/SUB=-/GaSb, выращенные в поле температурного градиента

2018 ◽  
Vol 60 (5) ◽  
pp. 888
Author(s):  
М.Л. Лунина ◽  
Л.С. Лунин ◽  
В.В. Калинчук ◽  
А.Е. Казакова
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Liquid Phase ◽  
Temperature Gradient ◽  
Growth Kinetics ◽  
Luminescence Properties ◽  
Structural Perfection ◽  
Gasb Substrate

AbstractThe thin-film In_ x Al_ y Ga_1 – x – y As_ z Sb_1 – z /GaSb heterostructures have been grown from liquid phase in a temperature gradient. The growth kinetics, the composition, the structural perfection, and the luminescence properties of the InAlGaAsSb thin films grown on a GaSb substrate have been studied.

scholarly journals Enhancing the Relative Sensitivity of V5+, V4+ and V3+ Based Luminescent Thermometer by the Optimization of the Stoichiometry of Y3Al5−xGaxO12 Nanocrystals

Nanomaterials ◽  
2019 ◽  
Vol 9 (10) ◽  
pp. 1375 ◽  
Author(s):  
Kniec ◽  
Ledwa ◽  
Marciniak
Keyword(s):  
Energy Transfer ◽  
Emission Intensity ◽  
Spectral Response ◽  
Luminescent Properties ◽  
Relative Sensitivity ◽  
Temperature Sensing ◽  
Thermal Dependence ◽  
Temperature Range

In this work the influence of the Ga3+ concentration on the luminescent properties and the abilities of the Y3Al5−xGaxO12: V nanocrystals to noncontact temperature sensing were investigated. It was shown that the increase of the Ga3+ amount enables enhancement of V4+ emission intensity in respect to the V3+ and V5+ and thus modify the color of emission. The introduction of Ga3+ ions provides the appearance of the crystallographic sites, suitable for V4+ occupation. Consequently, the increase of V4+ amount facilitates V5+ → V4+ interionic energy transfer throughout the shortening of the distance between interacting ions. The opposite thermal dependence of V4+ and V5+ emission intensities enables to create the bandshape luminescent thermometr of the highest relative sensitivity of V-based luminescent thermometers reported up to date (Smax, 2.64%/°C, for Y3Al2Ga3O12 at 0 °C). An approach of tuning the performance of Y3Al5−xGaxO12: V nanocrystals to luminescent temperature sensing, including the spectral response, maximal relative sensitivity and usable temperature range, by the Ga3+ doping was presented and discussed.

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