scholarly journals Изучение микроструктуры кристаллов Si, подвергнутых облучению быстрыми Н-=SUP=-+-=/SUP=--ионами и термообработке, методами высокоразрешающей трехкристальной рентгеновской дифрактометрии и электронной просвечивающей микроскопии

2019 ◽  
Vol 61 (10) ◽  
pp. 1754
Author(s):  
В.Е. Асадчиков ◽  
И.Г. Дьячкова ◽  
Д.А. Золотов ◽  
Ф.Н. Чуховский ◽  
Л.М. Сорокин
Keyword(s):  
Electron Microscopy ◽  
Higher Education ◽  
Heat Treatment ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Structural Features ◽  
Radiation Defects ◽  
Defective Structure ◽  
X Ray ◽  
Transmission Electron

The structural features of the formation of radiation defects in proton-implanted layers of silicon wafers during their heat treatment are studied. New data on the nature, characteristics and concentration of microdefects in Si crystals irradiated with protons with energies of 100+200+300 Kev, with a total dose of 2·1016 ion/cm2, and the evolution of the defective structure during heat treatment in a wide temperature range from 200 to 1100°C were obtained from the analysis of the results of studies by high-resolution three-crystal X-ray diffractometry and transmission electron microscopy. This work was supported by the Ministry of Science and Higher Education within the State assignment FSRC «Crystallography and Photonics» RAS.

Synchrotron X-Ray Topography Analysis of Double Shockley Stacking Faults in 4H-SiC Wafers

2016 ◽  
Vol 858 ◽  
pp. 105-108 ◽  
Author(s):  
Yu Yang ◽  
Jian Qiu Guo ◽  
Ouloide Goue ◽  
Balaji Raghothamachar ◽  
Michael Dudley ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Heat Treatment ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
High Temperatures ◽  
Formation Mechanism ◽  
Stacking Faults ◽  
Generation Process ◽  
X Ray ◽  
Transmission Electron

Synchrotron white beam X-ray topography studies carried out on 4H-SiC wafers characterized by locally varying doping concentrations reveals the presence of overlapping Shockley stacking faults generated from residual surface scratches in regions of higher doping concentrations after the wafers have been subjected to heat treatment. The fault generation process is driven by the fact that in regions of higher doping concentrations, a faulted crystal containing double Shockley faults is more stable than perfect 4H–SiC crystal at the high temperatures (>1000 °C) that the wafers are subject to during heat treatment. We have developed a model for the formation mechanism of the rhombus shaped stacking faults, and experimentally verified it by characterizing the configuration of the bounding partials of the stacking faults on both surfaces. Using high resolution transmission electron microscopy, we have verified that the enclosed stacking fault is a double Shockley type.

Synthesis of CuO and Cu2O crystalline nanowires using Cu(OH)2 nanowire templates

2003 ◽  
Vol 18 (12) ◽  
pp. 2756-2759 ◽  
Author(s):  
Wenzhong Wang ◽  
Oomman K. Varghese ◽  
Chuanmin Ruan ◽  
Maggie Paulose ◽  
Craig A. Grimes
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Average Diameter ◽  
Structural Features ◽  
X Ray Diffraction ◽  
X Ray ◽  
Synthesis Conditions ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron

Crystalline CuO and Cu2O nanowires with an average diameter of about 10 nm and lengths of several tens of microns were successfully synthesized, depending on synthesis conditions, using precursor Cu(OH)2 nanowires as templates. The crystallinity, purity, morphology, and structural features of the as-prepared nanowires were characterized by powder x-ray diffraction, selected-area electron diffraction, and high-resolution transmission electron microscopy. The results showed that the precursor polycrystalline Cu(OH)2 nanowires served as both reactants for the growth of CuO and Cu2O nanowires, and as templates controlling the size and shape of the resulting nanowires.

A High Resolution Study of G.P. Zones in Aluminum - 4.2 at % Silver

1982 ◽  
Vol 40 ◽  
pp. 722-723 ◽  
Author(s):  
R. Gronsky
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Computer Simulations ◽  
Structural Characteristics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Resolution Study

The phenomenon of clustering in Al-Ag alloys has been extensively studied since the early work of Guinierl, wherein the pre-precipitation state was characterized as an assembly of spherical, ordered, silver-rich G.P. zones. Subsequent x-ray and TEM investigations yielded results in general agreement with this model. However, serious discrepancies were later revealed by the detailed x-ray diffraction - based computer simulations of Gragg and Cohen, i.e., the silver-rich clusters were instead octahedral in shape and fully disordered, atleast below 170°C. The object of the present investigation is to examine directly the structural characteristics of G.P. zones in Al-Ag by high resolution transmission electron microscopy.

scholarly journals Microstructure and Stability Comparison of Nanometer Period W/C, Wc/C, and Ru/C Multilayer Structures

1990 ◽  
Vol 187 ◽  
Author(s):  
Tai D. Nguyen ◽  
Ronald Gronsky ◽  
Jeffrey B. Kortright
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Layered Structures ◽  
Multilayer Structures ◽  
X Ray ◽  
Transmission Electron

AbstractMultilayer structures of W/C, WC/C, and Ru/C, of various periods were prepared and studied by high-resolution transmission electron microscopy. Comparison of the phases in the layered structures is made for as-prepared and annealed samples. Both as-prepared and annealed WC/C multilayers are predominantly amorphous, while the phases in the W/C depend on the periods. The 2 nm period W/C multilayer remains amorphous after annealing, and the longer periods recrystallize to form W2C. The layered microstructures of W/C and WC/C are stable on annealing at all periods, while the amorphous Ru-rich layers in the 2 nm period Ru/C multilayer agglomerate upon annealing to form elemental hexagonal Ru crystallites. Larger period Ru/C multilayers show stable layered structures, and indicate hexagonal Ru in the Ru-rich layers. X-ray measurements show that the multilayer periods expand on annealing for all metal-carbon multilayers studied.

HRTEM Investigation of Precipitates in Al-Zn-In-Mg-Ti-Ce Anode Alloy

2011 ◽  
Vol 189-193 ◽  
pp. 1036-1039
Author(s):  
Jing Ling Ma ◽  
Jiu Ba Wen ◽  
Yan Fu Yan
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Resolution ◽  
Electron Diffraction ◽  
Hexagonal Structure ◽  
Orientation Relation ◽  
X Ray ◽  
Selected Area Electron Diffraction ◽  
Transmission Electron ◽  
Scanning Electron

The precipitates of Al-5Zn-0.02In-1Mg-0.05Ti-0.5Ce (wt %) anode alloy were studied by scanning electron microscopy, X-ray microanalysis, high resolution transmission electron microscopy and selected area electron diffraction analyses in the present work. The results show that the alloy mainly contains hexagonal structure MgZn2 and tetragonal structure Al2CeZn2 precipitates. From high resolution transmission electron microscopy and selected area electron diffraction, aluminium, Al2CeZn2 and MgZn2 phases have [0 1 -1]Al|| [1 -10]Al2CeZn2|| [-1 1 0 1]MgZn2orientation relation, and Al2CeZn2 and MgZn2 phases have the [0 2 -1]Al2CeZn2|| [0 1 -10]MgZn2orientation relation.

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