scholarly journals Получение текстурированных пленок FeCo(110) и FeCo(200) магнетронным распылением на постоянном токе

2022 ◽  
Vol 64 (2) ◽  
pp. 284
Author(s):  
A.С. Джумалиев ◽  
В.К. Сахаров
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Bias Voltage ◽  
Dc Magnetron Sputtering

The results of study of bias voltage Ub and substrate temperature Ts influence on the texture of FeCo films with the thickness of 180 nm deposited on Si/SiO2 substrates by DC magnetron sputtering are presented. It is shown that the change of Ub from -250 V to ~ 80 V leads to the growth of films with (110) texture. Further change of Ub from 80 V to 250 V causes the growth of films having (200) texture. Films deposited at Ub = 0 and Ts = 60º – 300º C have (200) texture. Further increase of Ts results in the change of film texture to (110).

Annealing Effect on the Activation of 1.54 [νm Emission from Erbium in a-Si:H Matrix Prepared by DC Magnetron Sputtering

1998 ◽  
Vol 507 ◽  
Author(s):  
A.A. Andreev ◽  
V.G. Golubev ◽  
A.V. Medvedev ◽  
A.B. Pevtsov ◽  
V.B. Voronkov
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Thermal Annealing ◽  
Structural Rearrangement ◽  
Nitrogen Atmosphere ◽  
Annealing Effect ◽  
Dc Magnetron Sputtering ◽  
Amorphous Network ◽  
Erbium Doped ◽  
Pl Intensity

ABSTRACTCumulative thermal annealing (TA) changes the photoluminescence (PL) intensity in erbium-doped a-Si:H films prepared using DC magnetron sputtering of a composite Er-Si target at substrate temperature 200°C. The intensity of erbium-related 1.54 νm PL at 77 K is enhanced about 50 times after TA at 300°C for 15 min in nitrogen atmosphere. No erbium-related PL is observed after TA at T≤500°C. The TA process is discussed in terms of a model of partial structural rearrangement in an a-Si(Er):H amorphous network.

Effect of Sputtering Gas Pressure and Bias Voltage on Mechanical Properties of TiN Coating Deposited by DC Magnetron Sputtering

2004 ◽  
Author(s):  
Hirotaka Tanabe ◽  
Yoshio Miyoshi ◽  
Tohru Takamatsu ◽  
Hitoshi Awano ◽  
Takaaki Yamano
Keyword(s):  
Mechanical Properties ◽  
Residual Stress ◽  
Magnetron Sputtering ◽  
Bias Voltage ◽  
Adhesive Strength ◽  
Gas Pressure ◽  
Dc Magnetron Sputtering ◽  
Tin Films ◽  
Bombarding Energy ◽  
Gas Pressures

The mechanical properties of TiN films deposited on carbon steel JIS S45C by reactive dc magnetron sputtering under three sputtering gas pressures, 0.5Pa, 0.8Pa, and 1.76Pa were investigated. The residual stress once increased and then decreased with increasing bias voltage at 0.5Pa and 0.8Pa, but increased monotonously at 1.76Pa. These variations could be explained by the variations of the bombarding energy of a sputtered ion at each gas pressure. The variations of hardness and toughness correlated with the variation of residual stress. The variation of adhesive strength also could be explained by the variation of the bombarding energy with a model proposed in this study. A specific wear rate was also investigated, and it was found that to increase not only the hardness but also the adhesive strength is necessary to improve the wear resistance of TiN films.

Influential Factors on Microstructure of LaB6 Films

2013 ◽  
Vol 385-386 ◽  
pp. 3-6
Author(s):  
Jing Xu
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Bias Voltage ◽  
Substrate Surface ◽  
Influential Factors ◽  
Substrate Bias ◽  
Substrate Bias Voltage ◽  
Sputtering Deposition ◽  
Morphology Of Films

LaB6 films are deposited by magnetron sputtering deposition. ZrO2 glass is used as substrate. Bias voltage and substrate temperature are adjusted. Morphology of films that deposited at different parameters is characterized by AFM. Results of AFM shows that grains diameter on surface of LaB6 films is nanoscale, and roughness of the surface is less than 20nm. LaB6 crystallites are seen to cover substrate surface entirely. Structure of films is smooth and compactness, and there is no obviously default is found. Bias-voltage influences morphologies of films more obviously than substrate. The best bias voltage is-100V. Structure of film that deposited at 450°C is more compactness than others, and roughness of the film is least.

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