scholarly journals Локализация носителей заряда в квантовых ямах InGaN/GaN, ограниченная объемным зарядом

2022 ◽  
Vol 64 (3) ◽  
pp. 371
Author(s):  
Н.И. Бочкарева ◽  
Ю.Г. Шретер
Keyword(s):  
Quantum Well ◽  
Space Charge ◽  
Deep Level ◽  
Forward Bias ◽  
Optical Excitation ◽  
Tunneling Spectroscopy ◽  
Carrier Localization ◽  
Photoluminescence Band ◽  
Peak Energy ◽  
Carrier Tunneling

The mechanism of carrier tunneling through the potential walls of InGaN/GaN quantum well in the p-n structures is studied by means of the deep center tunneling spectroscopy. A number of humps on the current and photocurrent tunneling spectra, as well as on the forward bias dependences of the intensity and the peak energy of photoluminescence band from the quantum well are detected. These findings allow us to propose a model of carrier localization in the quantum well that permit to relate the tunneling transparency of the potential walls of the QW to the space-charge of deep-level centers in the quantum well barriers and its changes under optical excitation and forward biasing of p-n structure.

A possible mechanism for the behaviour of a p–n, II–IV amorphous heterojunction

1980 ◽  
Vol 58 (1) ◽  
pp. 38-42 ◽  
Author(s):  
D. E. Brodie ◽  
C. J. Moore
Keyword(s):  
Charge Density ◽  
Space Charge ◽  
Space Charge Region ◽  
Forward Bias ◽  
Space Charge Density ◽  
Junction Region ◽  
Zero Bias ◽  
Carrier Tunneling ◽  
Extended States ◽  
Fixed Bias

A phenomenological model is suggested for an amorphous p–n heterojunction. The forward bias currents are influenced by the large mobility decrease that occurs for majority carriers in extended states as they arrive at the junction region and enter hopping states. A zero-bias barrier exists but this increases with forward bias since the mobility mismatch initially produces a change in the space charge region width as well as a decrease in the average space charge density with increasing current density. At larger forward biases, the space charge region width tends to saturate and the average space charge density begins to increase.The reverse bias breakdown current is due to majority carrier tunneling. This model developed from the observed I–V characteristics is used to predict results that are compared with the measured current-temperature (at fixed bias) and bias-capacitance variations for actual devices.

Optical excitation of space-charge waves involving interband transitions in Bi12GeO20 Crystals

2008 ◽  
Vol 34 (7) ◽  
pp. 549-551 ◽  
Author(s):  
D. V. Petrov ◽  
V. V. Lebedev ◽  
V. V. Bryksin ◽  
I. V. Pleshakov
Keyword(s):  
Space Charge ◽  
Optical Excitation ◽  
Interband Transitions ◽  
Space Charge Waves

scholarly journals Experimental and Modeling Study on the High-Performance p++-GaAs/n++-GaAs Tunnel Junctions with Silicon and Tellurium Co-Doped InGaAs Quantum Well Inserted

Crystals ◽  
2020 ◽  
Vol 10 (12) ◽  
pp. 1092
Author(s):  
Yudan Gou ◽  
Jun Wang ◽  
Yang Cheng ◽  
Yintao Guo ◽  
Xiao Xiao ◽  
...  
Keyword(s):  
Quantum Well ◽  
High Performance ◽  
High Efficiency ◽  
Tunnel Junctions ◽  
Peak Current Density ◽  
Co Doping ◽  
Trap Assisted Tunneling ◽  
Carrier Tunneling ◽  
High Concentrations ◽  
Ingaas Quantum Well

The development of high-performance tunnel junctions is critical for achieving high efficiency in multi-junction solar cells (MJSC) that can operate at high concentrations. We investigate silicon and tellurium co-doping of InGaAs quantum well inserts in p++-GaAs/n++-GaAs tunnel junctions and report a peak current density as high as 5839 A cm−2 with a series resistance of 5.86 × 10−5 Ω cm2. In addition, we discuss how device performance is affected by the growth temperature, thickness, and V/III ratio in the InGaAs layer. A simulation model indicates that the contribution of trap-assisted tunneling enhances carrier tunneling.

Compositional Modulation and its Optoelectric Properties of Zn(S,Se,Te) Crystals Grown by Hydrogen Radical-Enhanced CVD

1995 ◽  
Vol 417 ◽  
Author(s):  
Hiroyuki Fujiwara ◽  
Toshihiro Ii ◽  
Isamu Shimizu
Keyword(s):  
Deep Level ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Small Shift ◽  
X Ray ◽  
Compositional Modulation ◽  
Peak Energy ◽  
Large Lattice ◽  
The Difference ◽  
Hydrogen Radical

AbstractHigh-quality (ZnS)n(ZnSe)12n and (ZnSe)n(ZnTe)11n (n=1∼4) crystals were grown at a low temperature of 200°C by hydrogen radical-enhanced chemical vapor deposition. From satellite peaks in x-ray diffraction spectra, these periodic structure crystals were confirmed to be grown coherently on substrates, in spite of large lattice mismatches between the grown layers and the substrates (͛=4∼7%). In photoluminescence (PL) spectra of these films, strong band-edge emissions were predominantly observed, resulting from a suppression of deep-level emissions. We found that the PL peak energy of (ZnSe)n(ZnTe)11n shifts systematically to lower energy by 200 meV with changes in the number of ZnSe layers (n), while relatively small shift of 13 meV was observed in (ZnS)n(ZnSe)12n. These discrepancy can be attributed to the difference of band-lineups or chemical natures of constituent atoms in these crystals.

Effect of Thermal Annealing on the Photoluminescence Properties of a GaInNAs/GaAs Single Quantum Well

2000 ◽  
Vol 639 ◽  
Author(s):  
Laurent Grenouillet ◽  
Catherine Bru-Chevallier ◽  
Gérard Guillot ◽  
Philippe Gilet ◽  
Philippe Ballet ◽  
...  
Keyword(s):  
Quantum Well ◽  
Thermal Annealing ◽  
Low Temperatures ◽  
Blue Shift ◽  
Emission Peak ◽  
Single Quantum ◽  
Photoluminescence Properties ◽  
Single Quantum Well ◽  
Peak Energy ◽  
Strong Blue Shift

ABSTRACTWe report on the effect of thermal annealing on the photoluminescence properties of a Ga0.65In0.35N0.02As0.98/GaAs single quantum well. Thermal annealing is shown to decrease the strong nitrogen-induced localization effects observed at low temperatures and to reduce the full width at half maximum of the emission peak. It also induces a strong blue shift of the emission peak energy, which is thought not to arise from an In-Ga interdiffusion alone, as it is much larger than in a nitrogen-free reference single quantum well.

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