scholarly journals Неразрушающий контроль поверхности, слоев и концентрации носителей заряда в подложках и структурах SiC

2019 ◽  
Vol 89 (12) ◽  
pp. 1869
Author(s):  
А.В. Марков ◽  
М.Ф. Панов ◽  
В.П. Растегаев ◽  
Е.Н. Севостьянов ◽  
В.В. Трушлякова

Abstract Silicon carbide substrates and epitaxial structures are investigated by nondestructive contactless methods. Parameters of the disrupted surface layer and roughnesses are determined using ellipsometry and atomic force microscopy. The free charge carrier concentration is determined by IR spectroscopy. The thicknesses in the multilayer epitaxial structure on SiC are determined using IR spectroscopy and scanning electron microscopy.

Coatings ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 652
Author(s):  
Divine Sebastian ◽  
Chun-Wei Yao ◽  
Lutfun Nipa ◽  
Ian Lian ◽  
Gary Twu

In this work, a mechanically durable anticorrosion superhydrophobic coating is developed using a nanocomposite coating solution composed of silica nanoparticles and epoxy resin. The nanocomposite coating developed was tested for its superhydrophobic behavior using goniometry; surface morphology using scanning electron microscopy and atomic force microscopy; elemental composition using energy dispersive X-ray spectroscopy; corrosion resistance using atomic force microscopy; and potentiodynamic polarization measurements. The nanocomposite coating possesses hierarchical micro/nanostructures, according to the scanning electron microscopy images, and the presence of such structures was further confirmed by the atomic force microscopy images. The developed nanocomposite coating was found to be highly superhydrophobic as well as corrosion resistant, according to the results from static contact angle measurement and potentiodynamic polarization measurement, respectively. The abrasion resistance and mechanical durability of the nanocomposite coating were studied by abrasion tests, and the mechanical properties such as reduced modulus and Berkovich hardness were evaluated with the aid of nanoindentation tests.


1999 ◽  
Vol 5 (6) ◽  
pp. 413-419 ◽  
Author(s):  
Bernardo R.A. Neves ◽  
Michael E. Salmon ◽  
Phillip E. Russell ◽  
E. Barry Troughton

Abstract: In this work, we show how field emission–scanning electron microscopy (FE-SEM) can be a useful tool for the study of self-assembled monolayer systems. We have carried out a comparative study using FE-SEM and atomic force microscopy (AFM) to assess the morphology and coverage of self-assembled monolayers (SAM) on different substrates. The results show that FE-SEM images present the same qualitative information obtained by AFM images when the SAM is deposited on a smooth substrate (e.g., mica). Further experiments with rough substrates (e.g., Al grains on glass) show that FE-SEM is capable of unambiguously identifying SAMs on any type of substrate, whereas AFM has significant difficulties in identifying SAMs on rough surfaces.


2021 ◽  
Vol 63 (9) ◽  
pp. 1340
Author(s):  
Н.А. Иванов ◽  
С.А. Небогин ◽  
С.С. Колесников ◽  
Л.И. Брюквина

It is investigated the thermal etching of LiF and MgF2 crystals with cobalt and nickel impurities by means of scanning electron microscopy and atomic force microscopy with using decorating. It is shown that impurity inclusions leave the crystal from dislocations. The differences between of thermal etching in vacuum and air atmosphere take place. The crystallographic oriented terraced etch pits are formed after exit of impurities from dislocations. The square thermal etch pits are formed after thermal etching at 750°C in air. The surface impurity nanoscale film is formed at thermal etching. The oxidation of surface impurities observed at thermal etching in air atmosphere or in residual air atmosphere.


RSBO ◽  
2021 ◽  
Vol 17 (2) ◽  
pp. 85-91
Author(s):  
João Batista de Souza ◽  
Daniel Rodrigues ◽  
Paula Cicília Faquim Rodrigues ◽  
Lawrence Gonzaga Lopes ◽  
Tainah Costa Firmiano ◽  
...  

The aim of this study was to evaluate dentin morphology after ozone gas and sodium ascorbate application by the Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) images. Material and methods: Seven freshly extracted human third molars were sectioned perpendicularly to the tooth long axis, 3mm above the cementoenamel junction and other section above the first. Dentin slices were obtained, 2 mm thickness, then the slices were sectioned vertically and horizontally into four equal parts, resulting in 28 samples. These were divided in 4 groups (n=7): (G1) phosphoric acid – control; (G2) ozone + phosphoric acid; (G3) phosphoric acid + ozone; and (G4) ozone + sodium ascorbate + phosphoric acid. Dentin morphology of six samples of each groupwas evaluated by SEM and one by AFM. Results: In Groups 2 and 4 there was a change in the effectiveness of acid etching in terms of removing the smear layer. In Group 3 there was a change in the dentin microstructure, which can be a harmful factor regarding the bond strength of adhesive agents. Conclusion: After the qualitative analysis, the application sequences of ozone, phosphoric acid etching and sodium ascorbate application generated differences in the dentinmorphology by SEM and AFM. Sodium ascorbate decreased the ozone effect before the acid etching but did not eliminate it.


2012 ◽  
Vol 730-732 ◽  
pp. 257-262
Author(s):  
Bruno Nunes ◽  
Sergio Magalhães ◽  
Nuno Franco ◽  
Eduardo Alves ◽  
Ana Paula Serro ◽  
...  

Aiming to improve the nanotribological response of Si-based materials we implanted silicon wafers with different fluences of iron ions (up to 2x1017 cm-2). Implantation was followed by annealing treatments at temperatures from 550°C to 1000°C. The implanted surfaces were analyzed by scanning electron microscopy (SEM), X-ray diffraction (XRD), atomic force microscopy (AFM) and wettability tests. Then, samples were submitted to AFM-based nanowear tests. We observe an increase of both hidrophobicity and and wear resistance of the implanted silicon, indicating that ion implantation of Si can be a route to be deeper explored in what concerns tribomechanical improvement of Si.


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