Выглаживание поверхности антимонида галлия
For the first time, the results of a study of the conditions for obtaining an atomically smooth surface of GaSb substrates are presented. It is shown experimentally that it is possible to improve the surface quality of the samples by changing the annealing conditions. The lowest obtained roughness of 1.27 nm was obtained at an annealing time of 16 minutes at a temperature of 650°C in the flow of TMSb and H2.
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2009 ◽
Vol 615-617
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pp. 77-80
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2013 ◽
Vol 589-590
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pp. 447-450
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2021 ◽
Vol 15
(1)
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pp. 34-40
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2019 ◽
Vol 62
(2)
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pp. 53-58
2020 ◽
Vol 5
(2)
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pp. 463-478
2020 ◽
Vol 110
(11-12)
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pp. 838-843
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