scholarly journals Диэлектрические и пироэлектрические свойства композитов на основе нитридов алюминия и галлия, выращенных методом хлорид-гибридной эпитаксии на подложке карбида кремния на кремнии

2021 ◽  
Vol 47 (9) ◽  
pp. 7
Author(s):  
А.В. Солнышкин ◽  
О.Н. Сергеева ◽  
О.А. Шустова ◽  
Ш.Ш. Шарофидинов ◽  
М.В. Старицын ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Layer Growth ◽  
Epitaxial Layers ◽  
Pyroelectric Properties ◽  
Si Substrates ◽  
Spontaneous Formation ◽  
Hydride Epitaxy

The microstructure, dielectric, and pyroelectric properties of AlxGa1-xN composite epitaxial layers grown on SiC / (111) Si substrates by chloride-hydride epitaxy are studied. In the process of layer growth, the phenomenon of spontaneous formation of heterojunctions was discovered. Based on AlxGa1-xN epitaxial layers, a material has been obtained which currently has one of the highest pyroelectric coefficients for crystals (or thin films) of aluminum nitride.

New Semipolar Aluminum Nitride Thin Films: Growth Mechanisms, Structure, Dielectric and Pyroelectric Properties

2019 ◽  
Vol 544 (1) ◽  
pp. 33-37
Author(s):  
O. N. Sergeeva ◽  
A. V. Solnyshkin ◽  
S. A. Kukushkin ◽  
A. V. Osipov ◽  
Sh. Sharofidinov ◽  
...  
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Growth Mechanisms ◽  
Pyroelectric Properties

Diverse resistive switching behaviors of AlN thin films with different orientations

CrystEngComm ◽  
2018 ◽  
Vol 20 (40) ◽  
pp. 6230-6235 ◽  
Author(s):  
Chun-Cheng Lin ◽  
Huei-Yu Liou ◽  
Sheng-Yuan Chu ◽  
Chih-Yu Huang ◽  
Cheng-Shong Hong
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Radio Frequency ◽  
Resistive Switching ◽  
Rf Sputtering ◽  
Si Substrates

Aluminum nitride (AlN) thin films with different orientations (i.e., amorphous, (100)- and (002)-oriented) are deposited on Pt/Ti/SiO2/Si substrates via the radio-frequency (RF) sputtering method.

Interactions Between Al and Cr Thin Films

1976 ◽  
Vol 34 ◽  
pp. 638-639
Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Vacuum System ◽  
Processing Temperature ◽  
Diffusion Couples ◽  
Electronic Circuits ◽  
Intermetallic Formation ◽  
Si Substrates ◽  
Aluminum Silicon

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.

Defects in β-SiC thin films grown on α-SiC substrates

1988 ◽  
Vol 46 ◽  
pp. 568-569
Author(s):  
Karren L. More
Keyword(s):  
Thin Films ◽  
Semiconductor Device ◽  
Lattice Mismatch ◽  
Chemical Vapor ◽  
Substrate Material ◽  
Growth Interface ◽  
Si Substrates ◽  
Thermal Expansion Coefficients ◽  
Device Applications ◽  
Expansion Coefficients

Beta-SiC is an ideal candidate material for use in semiconductor device applications. Currently, monocrystalline β-SiC thin films are epitaxially grown on {100} Si substrates by chemical vapor deposition (CVD). These films, however, contain a high density of defects such as stacking faults, microtwins, and antiphase boundaries (APBs) as a result of the 20% lattice mismatch across the growth interface and an 8% difference in thermal expansion coefficients between Si and SiC. An ideal substrate material for the growth of β-SiC is α-SiC. Unfortunately, high purity, bulk α-SiC single crystals are very difficult to grow. The major source of SiC suitable for use as a substrate material is the random growth of {0001} 6H α-SiC crystals in an Acheson furnace used to make SiC grit for abrasive applications. To prepare clean, atomically smooth surfaces, the substrates are oxidized at 1473 K in flowing 02 for 1.5 h which removes ∽50 nm of the as-grown surface. The natural {0001} surface can terminate as either a Si (0001) layer or as a C (0001) layer.

Interface motion during recrystallization of amorphous NiSi2

1990 ◽  
Vol 48 (4) ◽  
pp. 524-525
Author(s):  
J. L. Batstone ◽  
D.A. Smith
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Amorphous Film ◽  
Nucleation And Growth ◽  
Recrystallization Process ◽  
Amorphous Films ◽  
Interface Motion ◽  
Si Substrates ◽  
Spherical Caps ◽  
Crystal Interfaces

Recrystallization of amorphous NiSi2 involves nucleation and growth processes which can be studied dynamically in the electron microscope. Previous studies have shown thatCoSi2 recrystallises by nucleating spherical caps which then grow with a constant radial velocity. Coalescence results in the formation of hyperbolic grain boundaries. Nucleation of the isostructural NiSi2 results in small, approximately round grains with very rough amorphous/crystal interfaces. In this paper we show that the morphology of the rccrystallizcd film is dramatically affected by variations in the stoichiometry of the amorphous film.Thin films of NiSi2 were prepared by c-bcam deposition of Ni and Si onto Si3N4, windows supported by Si substrates at room temperature. The base pressure prior to deposition was 6 × 107 torr. In order to investigate the effect of stoichiomctry on the recrystallization process, the Ni/Si ratio was varied in the range NiSi1.8-2.4. The composition of the amorphous films was determined by Rutherford Backscattering.

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