Diverse resistive switching behaviors of AlN thin films with different orientations

CrystEngComm ◽  
2018 ◽  
Vol 20 (40) ◽  
pp. 6230-6235 ◽  
Author(s):  
Chun-Cheng Lin ◽  
Huei-Yu Liou ◽  
Sheng-Yuan Chu ◽  
Chih-Yu Huang ◽  
Cheng-Shong Hong
Keyword(s):  
Thin Films ◽  
Aluminum Nitride ◽  
Radio Frequency ◽  
Resistive Switching ◽  
Rf Sputtering ◽  
Si Substrates

Aluminum nitride (AlN) thin films with different orientations (i.e., amorphous, (100)- and (002)-oriented) are deposited on Pt/Ti/SiO2/Si substrates via the radio-frequency (RF) sputtering method.

Low-voltage resistive switching of polycrystalline SrZrO3:Cr thin films grown on Si substrates by off-axis rf sputtering

2006 ◽  
Vol 24 (4) ◽  
pp. 970-973 ◽  
Author(s):  
Jae-Wan Park ◽  
Jong-Wan Park ◽  
Min Kyu Yang ◽  
Kyooho Jung ◽  
Dal-Young Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Low Voltage ◽  
Rf Sputtering ◽  
Si Substrates

Fabrication and Resistance-Switching Behaviors of NiO Thin Films by Thermal Oxidation of Evaporated Ni Films

2009 ◽  
Vol 66 ◽  
pp. 131-134
Author(s):  
X. Cao ◽  
Xiao Min Li ◽  
Wei Dong Yu ◽  
Rui Yang ◽  
Xin Jun Liu
Keyword(s):  
Thin Films ◽  
Thermal Oxidation ◽  
Resistive Switching ◽  
Resistance Switching ◽  
Si Substrates ◽  
Current Compliance

Polycrystalline NiO thin films were fabricated on Pt (111)/Ti/SiO2/Si substrates by thermal oxidation of the evaporated Ni films. Pt/NiO/Pt structures were prepared, and they showed reversible resistance switching behaviors. When the compliance set current was varied from 5 mA to 40 mA, the on-state currents increased, while the on-state resistances decreased. It is probably attributed to higher current compliance resulted in the formation of stronger and less resistive filaments, which in turn need more energy and power for their rupture. The resistive switching in NiO thin films is closely related to the formation and rupture of conducting filaments.

InN PHOTOCONDUCTORS ON DIFFERENT ORIENTATIONS OF Si SUBSTRATES

2012 ◽  
Vol 26 (31) ◽  
pp. 1250137 ◽  
Author(s):  
M. AMIRHOSEINY ◽  
Z. HASSAN ◽  
S. S. NG ◽  
L. S. CHUAH ◽  
M. A. AHMAD ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Ohmic Contact ◽  
Room Temperature ◽  
Thermal Evaporation ◽  
Indium Nitride ◽  
Rf Sputtering ◽  
Nitrogen Gas ◽  
Si Substrates ◽  
Current Voltage

We have fabricated photoconductors of indium nitride (InN) grown by radio frequency (RF) sputtering. The InN thin films were deposited on Si (100), Si (110) and Si (111) substrates at room temperature. The Ag/Al contact has been deposited by thermal evaporation in vacuum (10-5 Torr ) and then annealed under the flowing of the nitrogen gas environment in order to relieve stress and also induce any favorable reactions between metals and the semiconductor. Current–voltage (I–V) measurements after heat treatment at 400°C were carried out for samples in dark and illumination conditions. It was found that Ag/Al formed a good ohmic contact on top of InN . In addition, the characteristics of the contacts were significantly affected by the orientation of substrates.

scholarly journals Highly textured Sr, Nb co-doped BiFeO3 thin films grown on SrRuO3/Si substrates by rf- sputtering

2011 ◽  
Vol 110 (2) ◽  
pp. 024114 ◽  
Author(s):  
C. Ostos ◽  
O. Raymond ◽  
N. Suarez-Almodovar ◽  
D. Bueno-Baqués ◽  
L. Mestres ◽  
...  
Keyword(s):  
Thin Films ◽  
Rf Sputtering ◽  
Si Substrates ◽  
Bifeo3 Thin Films ◽  
Co Doped

Sensitivity of ZnO Based NH3 Sensor by RF Magnetron Sputtering

2012 ◽  
Vol 626 ◽  
pp. 168-172
Author(s):  
Samsiah Ahmad ◽  
Nor Diyana Md Sin ◽  
M.N. Berhan ◽  
Mohamad Rusop
Keyword(s):  
Thin Films ◽  
Zinc Oxide ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Structural Properties ◽  
Rf Magnetron Sputtering ◽  
Xrd Analysis ◽  
Zno Thin Films ◽  
Rf Power ◽  
Si Substrates

Zinc Oxide (ZnO) thin films were deposited onto SiO2/Si substrates using radio frequency (RF) magnetron sputtering method as an Ammonia (NH3) sensor. The dependence of RF power (50~300 Watt) on the structural properties and sensitivity of NH3sensor were investigated. XRD analysis shows that regardless of the RF power, all samples display the preferred orientation on the (002) plane. The results show that the ZnO deposited at 200 Watt display the highest sensitivity value which is 44%.

Multiferroic and resistive switching behaviors in BiFe0.95Cr0.05O3 thin films deposited on Pt/Ti/SiO2/Si substrates

2013 ◽  
Vol 113 (3) ◽  
pp. 779-785
Author(s):  
B. C. Luo ◽  
J. Wang ◽  
X. S. Cao ◽  
K. X. Jin ◽  
C. L. Chen
Keyword(s):  
Thin Films ◽  
Resistive Switching ◽  
Si Substrates

Process-dependent Coercive Fields in Undoped and Mn-doped BiFeO3 Films Formed on SrRuO3/Pt(111) Electrodes by rf Sputtering

2009 ◽  
Vol 1199 ◽  
Author(s):  
Jeong Hwan Kim ◽  
Hiroshi Funakubo ◽  
Yoshihiro Sugiyama ◽  
Hiroshi Ishiwara
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Radio Frequency ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Rf Sputtering ◽  
Mn Doped

AbstractWe deposited BiFeO3 (BFO) thin films on SrRuO3 (SRO)/Pt bottom electrodes by radio-frequency (RF) sputtering. Some samples were formed at the substrate temperature of 550 °C, and others were foremed at 450 °C and post-annealed at 650°C for crystallization. The coercive field in the post-annealed BFO film was smaller than that in the 550°C-deposited BFO film. The coercive field in Mn-doped BiFeO3 (BFMO) films which were deposited at 550 ˚C on SRO/Pt(111) was lower than that in undoped BFO films. Degradation of the remanent polarization was less significant in the post-annealed BFO film.

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