scholarly journals Формирование наноразмерных пленок золота в условиях многократного автооблучения при ионно-лучевом осаждении

2022 ◽  
Vol 48 (1) ◽  
pp. 27
Author(s):  
С.А. Шарко ◽  
А.И. Серокурова ◽  
Н.Н. Новицкий ◽  
А.И. Стогний ◽  
В.А. Кецко
Keyword(s):  
Ion Beam ◽  
Substrate Surface ◽  
Decisive Role ◽  
High Energy ◽  
Elastic Collision ◽  
Gold Films ◽  
Metal Atoms ◽  
Quartz Substrates ◽  
Metal Layers ◽  
Beam Deposition

Gold films with a thickness of several tens of nanometers were obtained on silicon and quartz substrates by ion-beam deposition – sputtering. It is shown that the predominant lateral growth of nanoscale metal layers along the substrate surface occurs under exposure to the high-energy component of the sputtered atoms flux. The decisive role in the nanometer gold film for-mation is played by the elastic collision of sputtered metal atoms with atoms of the substrate and the growing film. The application of the manifold deposition – sputtering operation allows sup-pressing the grain formation process and obtaining gold films with better characteristics than those with a single deposition.

scholarly journals Influence of the autoirradiation on nanosized gold layers formation by the ion-beam deposition

2021 ◽  
Vol 66 (2) ◽  
pp. 135-144
Author(s):  
E. N. Galenko ◽  
S. A. Sharko ◽  
N. N. Novitskii ◽  
O. I. Ivash ◽  
V. A. Ketsko
Keyword(s):  
Metal Layer ◽  
Ion Beam ◽  
High Energy ◽  
Optical Measurements ◽  
Gold Films ◽  
Ion Beam Sputtering ◽  
Ion Beam Deposition ◽  
Additional Operation ◽  
Quartz Substrates ◽  
Beam Deposition

2–13 nm gold films were obtained by the method of ion-beam sputtering on silicon and quartz substrates. It is shown that the use of an additional operation of deposition followed by the sputtering of a gold layer of 2–3 nm thickness makes it possible to reduce the electrical resistance and surface roughness of the metal films, in comparison with similar films obtained without its use. The results of measuring the temperature coefficient of resistance of nanosized gold films on silicon substrates allowed us to conclude that the films deposited become continuous at a thickness of 6-8 nm. The results of optical measurements of 10 nm gold films, obtained on quartz substrates, showed that the reflection coefficient of electromagnetic radiation at a wavelength of 850 nm is 2.8 % higher than the corresponding coefficient for the same films obtained without using this operation, and is 83 %. An important role in the formation of nanoscale gold layers is played by the processes of self-irradiation of the growing layer of the high-energy component of the gold atoms flux. When using an additional operation of deposition/sputtering, high-energy gold atoms are implanted into the substrate to a depth of about 2 nm. On the one hand, these atoms are point defects in the surface damaged layer of the substrate; on the other hand, they serve as additional centers of cluster formation. This ensures strong adhesion of the metal layer to the substrate and, therefore, the gold films become continuous and more homogeneous in microstructure. The method of ion-beam deposition can be successfully applied to obtain high-quality conductive optically transparent nanosized gold films.

Ion Beam Deposition for Novel Thin Film Materials and Coatings

2011 ◽  
Vol 674 ◽  
pp. 195-200 ◽  
Author(s):  
A.Y. Goikhman ◽  
S.A. Sheludyakov ◽  
E. A. Bogdanov
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Ion Beam ◽  
High Vacuum ◽  
Growth Conditions ◽  
High Energy ◽  
Present Contribution ◽  
Ion Beam Deposition ◽  
Thin Film Preparation ◽  
Beam Deposition

The Ion Beam Deposition (IBD) technique is not very widespread, but simple and very powerful methodic of thin film preparation, allowing to obtain high quality, smooth and very uniform films on big substrate areas (until 40 cm diameter), by target ablation with high energy particles in high vacuum. For the bombarding of the target is convenient to use the charged particles – ions of Ar, because they are easy to disperse in the electric field. Also, including neutralizing system, allow to obtain high-energy neutrals, irradiating the target, producing thin films from any kind of solid targets: from simple metals to complex conducting and non-conducting stoichiometric alloys. Thus, energy of condensing target particles is an average from several units to tens of eV. In the present contribution, we discuss the possibilities and advantages of IBD technology on application examples, including results of functional properties research of Ti, TiO2, SiO2 and Ag thin films for medicine applications, Ni, NiOx, Co and CoO single layers and structures for spintronics applications, and TiO2-SiO2, Ti-Zr-O-SiO2 multilayer structures for laser mirrors applications, produced by IBD system. Good structural, morphological quality (with roughness ~ 0.3 nm) and high uniformity on big areas along with right phase and stoichiometric state is demonstrated by convenient standard techniques for the structures prepared under the optimized growth conditions.

Structure and thermal behavior of N containing a-C films obtained by high energy ion beam deposition

1997 ◽  
Vol 120 (1-2) ◽  
pp. 139-148 ◽  
Author(s):  
E.B Halac ◽  
H Huck ◽  
G Zampieri ◽  
R.G Pregliasco ◽  
E Alonso ◽  
...  
Keyword(s):  
Thermal Behavior ◽  
Ion Beam ◽  
High Energy ◽  
Ion Beam Deposition ◽  
Beam Deposition

Stabilization of Metastable Zinc-Blende Phase MnTe by Ionized Cluster Beam Deposition

1992 ◽  
Vol 279 ◽  
Author(s):  
K. Ando ◽  
K. Takahashi ◽  
Y. Takeuchi
Keyword(s):  
Ion Beam ◽  
High Energy ◽  
Cluster Beam ◽  
Bulk Crystals ◽  
Film Properties ◽  
Zinc Blende ◽  
Cluster Ion ◽  
Cluster Beam Deposition ◽  
Acceleration Voltage ◽  
Beam Deposition

ABSTRACTThe ionized cluster beam (ICB) deposition was use to stabilize the metastable zinc-blende (ZB) MnTe films directly on GaAs (100) substrates at 300 °C with MnTe cluster ion beam. Influences of the ionization and the acceleration voltage on film properties were investigated by the reflection high-energy electron diffraction (RHEED), optical reflection, Raman scattering, and photoluminescence. The ZB-MnTe was stabilized by 3kV acceleration of the MnTe cluster beam. These results showed that the ICB deposition is useful to get compounds having crystalline phase different from the structures observed io equilibrium-grown bulk crystals.

Inhomogeneous character of the initial stage of ion beam deposition of ultrathin gold films

2004 ◽  
Vol 30 (3) ◽  
pp. 256-258
Author(s):  
A. I. Stognij ◽  
N. N. Novitskii ◽  
O. M. Stukalov ◽  
A. I. Demchenko ◽  
V. I. Khit’ko
Keyword(s):  
Ion Beam ◽  
Gold Films ◽  
Ion Beam Deposition ◽  
Initial Stage ◽  
Inhomogeneous Character ◽  
Beam Deposition

High Energy Ion Beam Mixing in Al2 O3

1983 ◽  
Vol 27 ◽  
Author(s):  
M. B. Lewis ◽  
C. J. Mchargue
Keyword(s):  
Elevated Temperatures ◽  
Ion Beam ◽  
High Energy ◽  
Binary Collision ◽  
Surface Layers ◽  
Ion Beam Mixing ◽  
Enhanced Diffusion ◽  
Depth Profiles ◽  
Metal Atoms ◽  
Radiation Enhanced Diffusion

ABSTRACTThe ion beam mixing technique has been employed to mix metal atoms into the surface layers of Al2O3. Ion beams of Fe+ and Zr+ in the 1 to 4 MeV energy range were used to irradiate Al2O3 specimens on the surfaces of which films of chromium or zirconium had been evaporated. Some specimens were irradiated at elevated temperatures of 873 or 1173 K. Rutherford backscattering (RBS) and channeling methods were used to measure the metal atom depth profiles near the surface. Analyses of the backscattering data included binary collision calculations using the codes TRIM and MARLOWE. The significance and limitations of high energy (>1 MeV) beams for ion beam mixing experiments is discussed. Evidence was found for radiation enhanced diffusion and/or solubility of zirconium and chromium in Al2O3 at 873 K.

Growth of Epitaxial Al2O3 Films on Silicon by Ionized Beam Deposition

2000 ◽  
Vol 648 ◽  
Author(s):  
SangWoo Whangbo ◽  
YunKi Choi ◽  
Kwun Bum Chung ◽  
HongKyu Jang ◽  
ChungNam Whang
Keyword(s):  
Electron Diffraction ◽  
Silicon Substrate ◽  
Ion Beam ◽  
High Energy ◽  
High Energy Electron ◽  
Orientation Relationships ◽  
Si Substrate ◽  
Al2o3 Films ◽  
Beam Deposition

AbstractEpitaxial Al2O3 films have been successfully grown on an oxidized silicon substrate by the ionized beam deposition using an Al ion beam in oxygen environments. The crystalline quality dependence of the Al2O3 films on the growth temperatures was investigated. Using in situ reflection high energy electron diffraction, the orientation relationships between epitaxial Al2O3 films and Si substrate were found to be (100) Al2O3//(100) Si with [110] Al2O3//[110] Si and (111) Al2O3//(111) Si with [112] Al2O3//[112] Si. The stoichiometry of the films was found to be similar to that of sapphire from XPS measurements.

scholarly journals Влияние адсорбированных атомов металлов на поглощение света поверхностью кварца

2020 ◽  
Vol 128 (12) ◽  
pp. 1934
Author(s):  
Н.Б. Леонов
Keyword(s):  
Quartz Substrate ◽  
Substrate Surface ◽  
Metal Films ◽  
Fused Silica ◽  
Difference Spectra ◽  
Metal Atoms ◽  
Plasmon Resonances ◽  
Quartz Substrates ◽  
Localized Plasmon Resonances ◽  
Deposited Films

The optical properties of submonolayer metal films - silver, gold, indium - obtained by laser ablation on the surface of fused silica are studied. Extinction and absorption spectra of quartz, substrates with deposited films, as well as difference spectra are obtained. The minimum values ​​of the effective thicknesses of metal films at which the nucleation of islands begins and localized plasmon resonances appear. It is shown that the absorption of the "quartz substrate-metal film" complex exceeds the sum of the absorptions by the quartz surface and by the metal atoms. The connection of this phenomenon with the transfer of charge from the metal to defects on the substrate surface is indicated.

A novel copper damascene technique for power loaded SAW structures

2004 ◽  
Vol 833 ◽  
Author(s):  
S. B. Menzel ◽  
M. Albert ◽  
D. Reitz ◽  
H. Wendrock ◽  
H. Schmidt ◽  
...  
Keyword(s):  
Ion Beam ◽  
Substrate Surface ◽  
Wafer Surface ◽  
Material Transport ◽  
Electrical Measurements ◽  
Layer System ◽  
First Results ◽  
Bonding Properties ◽  
Special Power ◽  
Quartz Substrates

ABSTRACTThe damage of finger electrodes of surface acoustic wave (SAW) structures due to material transport (acoustomigration) forming voids and hillocks is strongly associated with the SAW stress field, the temperature and properties of the fingers material and their configuration. By application of Cu thin films a significant higher performance of SAW structures with respect to power durability, reliability and lifetime is obtained. In the present paper Cu finger electrodes of a special power SAW test structure were fabricated in trenches of STX quartz substrates using the copper damascene technique. In comparison with conventional finger electrodes located on the substrate surface, such an embedded structure enables some new features regarding their acoustical and acoustomigration behavior. So high power SAW load cannot cause fatal failures by shorts between adjacent fingers. This fact is specially important for SAW devices in the GHz range. The trench structuring into the substrate was carried out by reactive ion (RIE) or ion beam etching (IBE) technique using a metallic hard mask. Etched trenches were filled with a conductive Ta-Si-N / Cu-layer system by magnetron sputtering in a cluster tool, and structured by a chemical-mechanical polishing (CMP) process. Subsequently, after cleaning an insulating Ta-based barrier (system Ta-Si-O / Ta-Si-N) layer was deposited on the wafer surface. This covering layer also acts as a protective coating. Such a metallization system enables sufficient bonding properties using Al-wires. First results of electrical measurements show that travelling SAW could be excited in quartz substrates.

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